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| 2SC4132 / 2SD1857 Transistors Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 Features 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency. (fT = 80MHz) 4) Complements the 2SB1236. External dimensions (Units : mm) 2SC4132 1.0 1.5 0.4 (1) 4.0 2.5 0.5 3.0 0.5 (3) 1.5 0.4 1.5 4.5 1.6 (2) Absolute maximum ratings (Ta = 25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation 2SC4132 Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 120 120 5 2 3 0.5 2 1 150 -55~+150 C C Unit V V V A A W ROHM : MPT3 EIAJ : SC-62 (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) 2SD1857 0.4 6.8 2.5 0.65Max. 1.0 *1 *2 0.9 2SD1857 Junction temperature Storage temperature 0.5 (1) (2) (3) 2.54 2.54 1.05 14.5 4.4 0.45 *1 *2 Single pulse Pw = 10ms When mounted on a 40 x 40 x 0.7mm ceramic board. Taping specifications ROHM : ATV (1) Emitter (2) Collector (3) Base Packaging specifications and hFE Type Package hFE Marking Code Basic ordering unit (pieces) 2SC4132 2SD1857 MPT3 PQR CB ATV PQR - TV2 2500 * T100 1000 * Denotes hFE Electrical characteristics (Ta = 25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 120 120 5 - - - 82 - - Typ. - - - - - - - 80 20 Max. - - - 1 1 0.4 390 - - Unit V V V A A V - MHz pF IC = 50A IC = 1mA IE = 50A VCB = 100V VEB = 4V IC/IB = 1A/0.1A VCE/IC = 5V/0.1A VCE = 5V , IE = -0.1A , f = 30MHz VCB = 10V , IE = 0A , f = 1MHz Conditions * * Transition frequency Output capacitance * Measured using pulse current. This datasheet has been download from: www..com Datasheets for electronics components. |
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