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6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors
High Speed Optocoupler, 10 Mbd
Features
* Choice of CMR performance of 10 kV/s, 5 kV/s, and 100 V/s * High speed: 10 Mbd typical * + 5 V CMOS compatibility * Guaranteed AC and DC performance over temperature: - 40 to + 100 C Temp. Range * Pure tin leads * Meets IEC60068-2-42 (SO2) and IEC60068-2-43 (H2S) requirements * Low input current capability: 5 mA * Lead-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
Single channel
Dual channel
NC A C NC
1 2 3 4
8 7 6 5
VCC VE VO GND
18921-3
A1 1 C1 C2 A2
2 3 4
8 7 6 5
VCC VO1 VO2 GND
SFH6745T, SFH6746T, SFH6747T
SFH6755T, SFH6756T, SFH6757T
Agency Approvals
* UL1577, File No. E52744 System Code H or J, Double Protection * CUL - File No. E52744, equivalent to CSA bulletin 5A * DIN EN 60747-5-2 (VDE0884) * Reinforced insulation rating per IEC60950 2.10.5.1 * VDE available with Option 1
sistor output, providing less leakage compared to an open collector Schottky clamped transistor output. For the single channel type, an enable function on pin 7 allows the detector to be strobed. The internal shield provides a guaranteed common mode transient immunity of 5 kV/s for the SFH6741 and SFH6751 and 10 kV/s for the SFH6742 and SFH6752. The use of a 0.1 F bypass capacitor connected between pin 5 and 8 is recommended.
Order Information
Part 6N137 6N137-X006 Remarks 100 V/s, Single channel, DIP-8 100 V/s, Single channel, DIP-8 400 mil (option 6) 100 V/s, Single channel, SMD-8 (option 7) 5 kV/s, Single channel, DIP-8 5 kV/s, Single channel, DIP-8 400 mil (option 6) 5 kV/s, Single channel, SMD-8 (option 7) 10 kV/s, Single channel, DIP-8 10 kV/s, Single channel, DIP-8 400 mil (option 6) 10 kV/s, Single channel, SMD-8 (option 7) 100 V/s, Dual channel, DIP-8 100 V/s, Dual channel, DIP-8 400 mil (option 6) 100 V/s, Dual channel, SMD-8 (option 7) 5 kV/s, Dual channel, DIP-8
Applications
Microprocessor System Interface PLC, ATE input/output isolation Computer peripheral interface Digital Fieldbus Isolation: CC-Link, DeviceNet, Profibus, SDS High speed A/D and D/A conversion AC Plasma Display Panel Level Shifting Multiplexed Data Transmission Digital control power supply Ground loop elimination
6N137-X007 SFH6741 SFH6741-X006 SFH6741-X007 SFH6742 SFH6742-X006 SFH6742-X007 SFH6750 SFH6750-X006 SFH6750-X007 SFH6751
Description
The 6N137, SFH674x and SFH675x are single channel 10 Mbd optocouplers utilizing a high efficient input LED coupled with an integrated optical photodiode IC detector. The detector has an open drain NMOS-tran-
Document Number 82584 Rev. 1.8, 13-Aug-04
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6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors
Part SFH6751-X006 SFH6751-X007 SFH6752 SFH6752-X006 SFH6752-X007 Remarks 5 kV/s, Dual channel, DIP-8 400 mil (option 6) 5 kV/s, Dual channel, SMD-8 (option 7) 10 kV/s, Dual channel, DIP-8 10 kV/s, Dual channel, DIP-8 400 mil (option 6) 10 kV/s, Dual channel, SMD-8 (option 7)
Truth Table (Positive Logic)
LED ON OFF ON OFF ON OFF ENABLE H H L L NC NC OUTPUT L H H H L H
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter Average forward current1) Average forward current Reverse input voltage Enable input voltage Enable input
1) 2) 1) 2)
Test condition
Symbol IF IF VR VE IE
Value 20 15 5 VCC + 0.5 V 5 200
Unit mA mA V V mA mA
current1) t = 100 s
Surge current Package: Single DIP-8 Package: Dual DIP-8
IFSM
Output
Parameter Supply voltage Output current Output voltage Output power dissipation
1) 2) 1)
Test condition 1 minute max.
Symbol VCC IO VO Pdiss Pdiss
Value 7 50 7 85 60
Unit V mA V mW mW
Output power dissipation per channel2) Package: Single DIP-8 Package: Dual DIP-8
Coupler
Parameter Storage temperature Operating temperature Lead solder temperature1) Solder reflow temperature Isolation test voltage
1) 2) 2)
Test condition
Symbol Tstg Tamb
Value - 55 to + 150 - 40 to + 100 260 260
Unit C C C C VRMS
for 10 sec. for 1 minute t = 1.0 sec. VISO
5300
Package: DIP-8 through hole Package: DIP-8 SMD
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Document Number 82584 Rev. 1.8, 13-Aug-04
6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors Recommended Operating Conditions
Parameter Operating temperature Supply voltage Input current low level Input current high level Logic high enable voltage Logic low enable voltage Output pull up resistor Fanout RL = 1 k Test condition Symbol Tamb Vcc IFL IFH VEH VEL RL N Min - 40 4.5 0 5 2.0 0.0 330 Typ. Max 100 5.5 250 15 VCC 0.8 4K 5 Unit C V A mA V V -
Electrical Characteristics
Tamb = 25 C and Vcc = 5.5 V, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Input forward voltage Reverse current Input capacitance Test condition IF = 10 mA VR = 4.5 V f = 1 MHz, VF = 0 V Symbol VF IR CI Min 1.1 Typ. 1.4 1 55 Max 1.7 Unit V A pF
Output
Parameter High level supply current (single channel) High level supply current (dual channel) Low level supply current High level output current Low level output voltage Input threshold current High level enable current Low level enable current High level enable voltage Low level enable voltage Test condition VE = 0.5 V, IF = 0 mA Symbol ICCH Min Typ. 4.1 Max 7.0 Unit mA
VE = VCC, IF = 0 mA IF = 0 mA
ICCH ICCH
3.3 8.2
6.0 14.0
mA mA
VE = 0.5 V, IF = 10 mA VE = VCC, IF = 10 mA VE = 2.0 V, VO = 5.5 V, IF = 250 A VE = 2.0 V, IF = 5 mA, IOL (sinking) = 13 mA VE = 2.0 V, VO = 5.5 V, IOL (sinking) = 13 mA VE = 2.0 V VE = 0.5 V
ICCL ICCL IOH VOL ITH IEH IEL VEH VEL 2.0
4.0 3.3 0.002 0.2 2.4 - 0.6 - 0.8
7.0 6.0 1 0.6 5.0 - 1.6 - 1.6
mA mA A V mA mA mA V
0.8
V
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6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors Switching Characteristics
Over Recommended Temperature (Ta = - 40 to + 100 C), VCC = 5 V, IF = 7.5 mA unless otherwise specified. All Typicals at Ta = 25 C, VCC = 5 V. Parameter Propagation delay time to high output level Propagation delay time to low output level Pulse width distortion Propagation delay skew Output rise time (10 - 90 %) Output fall time (90 - 10 %) Propagation delay time of enable from VEH to VEL Propagation delay time of enable from VEL to VEH
*
Test condition RL = 350 , CL = 15 pF
Symbol tPLH tPLH
Min 20
Typ. 48
Max 75* 100
Unit ns ns ns ns ns ns ns ns ns ns
RL = 350 , CL = 15 pF
tPHL tPHL
25
50
75* 100
RL = 350 , CL = 15 pF RL = 350 , CL = 15 pF RL = 350 , CL = 15 pF RL = 350 , CL = 15 pF RL = 350 , CL = 15 pF, VEL = 0 V, VEH = 3 V RL = 350 , CL = 15 pF, VEL = 0 V, VEH = 3 V
| tPHL - tPLH | tPSK tr tf tELH tEHL
2.9 8 23 7 12 11
35 40
75ns applies to the 6N137 only, a JEDEC registered specification
VCC Single Channel Pulse Gen. Zo = 50 t f = t r = 5 ns Input IF Monitoring Node RM 1 IF 2 3 4 VCC 8 VE 7 VOUT 6 GND 5
5V RL
0.1 F Bypass
Input IF Output VO Monitoring Node C L = 15 pF tPLH tPHL
IF = 7.5 mA IF = 3.75 mA 0 mA VOL 1.5 V VOH
Output VO
The Probe and Jig Capacitances are included in CL
18964-1
Figure 1. Single Channel Test Circuit for tPLH, tPHL, tr and tf
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Document Number 82584 Rev. 1.8, 13-Aug-04
6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors
Pulse Gen. Zo = 50 t f = t r = 5 ns IF 1 Input Monitoring Node RM 2 3 4
18963-1
+5V Dual Channel VCC 8 7 6 GND 5 0.1 F Bypass RL Output V O Monitoring Node
CL= 15 pF
Figure 2. Dual Channel Test Circuit for tPLH, tPHL, tr and tf
Pulse Gen. Zo = 50 t f = t r = 5 ns 1 7.5 mA IF 2 3 4
Input VE Monitoring Node Single Channel VCC 8 VE 7 VOUT 6 GND 5
VCC
5V RL
0.1 F Bypass
Output VO Monitoring Node C L = 15 pF
Input VE tEHL tELH Output VO
3V 1.5 V
1.5 V
The Probe and Jig Capacitances are included in CL
18975-1
Figure 3. Single Channel Test Circuit for tEHL and tELH
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6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors Common Mode Transient Immunity
Parameter Common mode transient immunity (high) Test condition |VCM| = 10 V, VCC = 5 V, IF = 0 mA, VO(min) = 2 V, RL = 350 , Tamb = 25 C 1) |VCM| = 50 V, VCC = 5 V, IF = 0 mA, VO(min) = 2 V, RL = 350 , Tamb = 25 C 2) |VCM| = 1 kV, VCC = 5 V, IF = 0 mA, VO(min) = 2 V, RL = 350 , Tamb = 25 C 3) |VCM| = 10 V, VCC = 5 V, IF = 7.5 mA, VO(max) = 0.8 V, RL = 350 , Tamb = 25 C 1) |VCM| = 50 V, VCC = 5 V, IF = 7.5 mA, VO(max) = 0.8 V, RL = 350 , Tamb = 25 C |VCM| = 1 kV, VCC = 5 V, IF = 7.5 mA, VO(max) = 0.8 V, RL = 350 , Tamb = 25
1) 2) 3) 2)
Symbol | CMH |
Min 100
Typ.
Max
Unit V/s
| CMH | | CMH | | CML | | CML | | CML | C 3)
5000 10000 100 5000 10000
10000 15000
V/s V/s V/s
10000 15000
V/s V/s
For 6N137 and SFH6750 For SFH6741 and SFH6751 For SFH6742 and SFH6752
VCC IF 1 B A V FF 2 3 4 Single Channel VCC 8 VE 7 VOUT 6 GND 5
5V RL
0.1 F Bypass
Output VO Monitoring Node
V (PEAK) CM V CM 0 V Switch AT A: IF = 0 mA VO 5 V VO(min.) Switch AT A: IF = 7.5 mA VO(max.) VO 0.5 V
CMH
CML
V CM + Pulse Generator ZO = 50
18976-1
Figure 4. Single Channel Test Circuit for Common Mode Transient Immunity
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Document Number 82584 Rev. 1.8, 13-Aug-04
6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors
IF Dual Channel B 1 A 2 V FF 3 4 GND 7 6 5 VCC 8 +5V RL Output VO Monitoring Node 0.1 F Bypass
18977
V CM + Pulse Generator ZO = 50
Figure 5. Dual Channel Test Circuit for Common Mode Transient Immunity
Safety and Insulation Ratings
As per IEC60747-5-2, 7.4.3.8.1, this optocoupler is suitable for "safe electrical insulation" only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Climatic Classification (according to IEC 68 part 1) Comparative Tracking Index VIOTM VIORM PSI ISI TSI Creepage Clearance Creepage Clearance Insulation thickness, reinforced rated standard DIP-8 standard DIP-8 400mil DIP-8 400mil DIP-8 per IEC60950 2.10.5.1 7 7 8 8 0.2 CTI 175 8000 630 500 300 175 Test condition Symbol Min Typ. 55/110/21 399 V V mW mA C mm mm mm mm mm Max Unit
Typical Characteristics (Tamb = 25 C unless otherwise specified)
1.7
V F - Forward Voltage ( V )
1.60 IF = 50 mA V F - Forward Voltage ( V ) 100
17611
1.6 1.5 1.4 1.3 1.2 1.1 1.0 -40 -20 IF = 10 mA
1.55 1.50 1.45 1.40 1.35 1.30 1.25 1.20 1.15 1.10
IF = 20 mA
IF = 1 mA
0
20
40
60
80
0
5
17610
Tamb - Ambient Temperature ( C )
10 15 20 25 30 35 40 45 50 IF - Forward Current ( mA )
Figure 6. Forward Voltage vs. Ambient Temperature
Figure 7. Forward Voltage vs. Forward Current
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6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors
7 I R - Reverse Current ( nA ) 6 5 4 3 2 1 0 -40
17613-1
2.8 I th - Input Threshold ON Current ( A ) 2.7 2.6 2.5 2.4 2.3 2.2 2.1 -40 RL = 4 k RL = 1 k RL = 350
-20
0
20
40
60
80
100
Tamb - Ambient Temperature ( C )
17616
-20 0 20 40 60 80 100 Tamb - Ambient Temperature ( C )
Figure 8. Reverse Current vs. Ambient Temperature
Figure 11. Input Threshold ON Current vs. Ambient Temperature
- Low Level Supply Current ( mA )
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 VCC = 5 V IF = 10 mA VCC = 7 V IF = 10 mA
- Input Threshold OFF Current ( A )
4.0
2.6 2.5 2.4 2.3 2.2 RL = 4 k 2.1 RL = 1 k 2.0 -40 -20 0 20 40 60 80 100
RL = 350
I
CCl
-20
0
20
40
60
80
100
I
th
17614
Tamb - Ambient Temperature ( C )
17617
Tamb - Ambient Temperature ( C )
Figure 9. Low Level Supply Current vs. Ambient Temperature
Figure 12. Input Threshold OFF Current vs. Ambient Temperature
High Level Supply Current ( mA )
3.5 Vol - Low Level Output Voltage ( V ) 3.4 3.3 3.2 3.1 3.0 2.9 2.8 -40 VCC = 5 V IF = 0.25 mA VCC = 7 V IF = 0.25 mA
0.30 0.25 0.20 0.15 IL = 10 mA 0.10 0.05 0.00 -40 IL = 6 mA VCC = 5.5 V IF = 5 mA IL = 16 mA IL = 13 mA
I
CCh-
17615
-20 0 20 40 60 80 100 Tamb - Ambient Temperature ( C )
-20
0
20
40
60
80
100
17618
Tamb - Ambient Temperature ( C )
Figure 10. High Level Supply Current vs. Ambient Temperature
Figure 13. Low Level Output Voltage vs. Ambient Temperature
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Document Number 82584 Rev. 1.8, 13-Aug-04
6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors
60
I ol - Low Level Output Current ( mA )
120 IF = 5 mA IF = 10 mA
t P - Propagation Delay time ( ns )
50 40 30 20 10 0 -40 -20
tPLH, 4 k 100 80 60 40 20 0 -40 -20 tPLH, 350 tPLH, 1 k
tPHL, 350
tPHL, 1 k tPHL, 4 k
0
20
40
60
80
100
17622
17619
Tamb - Ambient Temperature ( _C )
0
20
40
60
80
100
Tamb - Ambient Temperature ( C )
Figure 14. Low Level Output Current vs. Ambient Temperature
Figure 17. Propagation Delay vs. Ambient Temperature
50 I oh - High Level Output Current ( nA ) 45 40 35 30 25 20 15 10 5 0 -40 -20 0 20 40 60 80 100
17623
120
t P - Propagation Delay time ( ns )
tPLH, 4 k 100 80 tPLH, 350 60 40 20 0 5 tPHL, 350
tPLH, 1 k
tPHL, 1 k tPHL, 4 k
17620
Tamb - Ambient Temperature ( C )
7 9 11 13 IF - Forward Current ( mA )
15
Figure 15. High Level Output Current vs. Ambient Temperature
Figure 18. Propagation Delay vs. Forward Current
5.5 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0
17621
50 PWD - Pulse Width Distortion ( ns ) 40 30 20 RL = 1 k 10 0 -40
17624
5.0
Vo - Output Voltage ( V )
RL = 4 k
RL = 350 W RL = 1 kW RL = 4 kW 1 2 3 4 5
RL = 350
IF - Forward Input Current ( mA )
-20 0 20 40 60 80 100 Tamb - Ambient Temperature ( C )
Figure 16. Output Voltage vs. Forward Input Current
Figure 19. Pulse Width Distortion vs. Ambient Temperature
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6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors
60 PWD - Pulse Width Distortion ( ns ) 50 40 30 20 10 0 5
17625
60 t e - Enable Propagation Delay ( ns ) RL = 4 k 50 teLH = 4 k 40 30 20 10 teHL = 1 k 0 -40 teHL = 4 k teLH = 1 k teLH = 350 teHL = 350
RL = 1 k
RL = 350 7 9 11 13 IF - Forward Current ( mA ) 15
17628
-20 0 20 40 60 80 100 Tamb - Ambient Temperature ( C )
Figure 20. Pulse Width Distortion vs. Forward Current
Figure 23. Enable Propagation Delay vs. Ambient Temperature
300 tr, RL = 4 k
t r,f - Rise and Fall Time ( ns )
250 200 150 100 tr, RL = 1 k 50 tr, RL = 350 tf, RL = 350 tf, RL = 1 k tf, RL = 4 k
17626
0 -40 -20 0 20 40 60 80 100 Tamb - Ambient Temperature ( C )
Figure 21. Rise and Fall Time vs. Ambient Temperature
300 tr, RL = 4 k
t r,f - Rise and Fall Time ( ns )
250 200 150 100 tr, RL = 1 k 50 0 5 7 9 11 13 15 tr, RL = 350 tf, RL = 350 tf, RL = 1 k tf, RL = 4 k
17627
IF - Forward Current ( mA )
Figure 22. Rise and Fall Time vs. Forward Current
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Document Number 82584 Rev. 1.8, 13-Aug-04
6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors Package Dimensions in Inches (mm)
pin one ID 4 .255 (6.48) .268 (6.81) 5 6 7 8
ISO Method A
3
2
1
.379 (9.63) .390 (9.91) .030 (0.76) .045 (1.14) 4 typ. .031 (0.79) .130 (3.30) .150 (3.81) .050 (1.27) .018 (.46) .022 (.56)
i178006
.300 (7.62) typ.
10 .020 (.51 ) .035 (.89 ) .100 (2.54) typ. 3-9 .008 (.20) .012 (.30)
.230(5.84) .110 (2.79) .250(6.35) .130 (3.30)
Option 6
.407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .028 (0.7) MIN.
Option 7
.300 (7.62) TYP .
Option 9
.375 (9.53) .395 (10.03) .300 (7.62) ref.
.180 (4.6) .160 (4.1) .0040 (.102)
.0098 (.249)
.315 (8.0) MIN. .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .331 (8.4) MIN. .406 (10.3) MAX.
.012 (.30) typ.
.020 (.51) .040 (1.02)
.315 (8.00) min.
15 max.
18450
Document Number 82584 Rev. 1.8, 13-Aug-04
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6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 82584 Rev. 1.8, 13-Aug-04
6N137/ SFH6741 / 42 / 50 / 51 / 52
Vishay Semiconductors
Document Number 82584 Rev. 1.8, 13-Aug-04
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