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| AP4953D Advanced Power Electronics Corp. Simple Drive Requirement Low On-resistance Fast Switching G2 D1 D1 D2 D2 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 53m -5A PDIP-8 S2 G1 S1 Description D1 D2 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating - 30 20 -5 -4 - 20 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit /W Data and specifications subject to change without notice 200922031 AP4953D Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA Min. Typ. Max. Units -30 -1 -0.1 53 90 -3 -1 -25 15 800 - V V/ m m V S uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) VGS=-10V, ID=-5A VGS=-4.5V, ID=-4A 6 9 2 5 10 9 20 25 500 217 153 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=-250uA VDS=-10V, ID=-5A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= 20V ID=-5A VDS=-15V VGS=-4.5V VDS=-15V ID=-1A RG=6,VGS=-10V RD=15 VGS=0V VDS=-15V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 100 nA Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 Test Conditions IS=-1.7A, VGS=0V IS=-5A, VGS=0V, dI/dt=100A/s Min. Typ. Max. Units 21.5 18 -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 90 /W when mounted on Min. copper pad. AP4953D 20 20 15 -ID , Drain Current (A) 10 V GS =-4.0V -ID , Drain Current (A) -10V -8.0V -6.0V -10V -8.0V -6.0V 15 10 V GS =-4.0V 5 5 T A =25 C 0 0 1 2 3 4 0 0 1 2 3 o T A =150 C 4 5 o -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 70 1.8 65 I D =-5A T A =25 1.6 I D =-5A V GS =10V Normalized RDS(ON) 60 1.4 RDS(ON) (m ) 55 1.2 50 1.0 45 0.8 40 35 3 5 7 9 11 0.6 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 3 100.00 10.00 2 -IS(A) T j =150 o C 1.00 T j =25 o C -VGS(th) (V) 1 0 1.3 1.5 -50 0.10 0.01 0.1 0.3 0.5 0.7 0.9 1.1 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4953D 12 10000 f=1.0MHz -VGS , Gate to Source Voltage (V) 10 I D =-5.3A V DS =-24V 8 1000 6 C (pF) Ciss Coss Crss 4 100 2 0 0 2 4 6 8 10 12 14 16 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty Factor=0.5 Normalized Thermal Response (Rthja) 0.2 10 1ms -ID (A) 1 0.1 0.1 0.05 0.02 10ms 100ms 1s 0.01 Single Pulse PDM 0.01 t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=90oC/W 0.1 T A =25 o C Single Pulse DC 0.01 0.1 1 10 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig10. Effective Transient Thermal Impedance VDS 90% VG QG QGS QGD -4.5V 10% VGS td(on) tr td(off)tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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