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| PD - 9.1107 IRGBC30KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features * Short circuit rated -10s @125C, VGE = 15V * Switching-loss rating includes all "tail" losses * HEXFREDTM soft ultrafast diodes * Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve C Short Circuit Rated UltraFast CoPack IGBT VCES = 600V VCE(sat) 3.8V G @VGE = 15V, IC = 14A E n-channel Description Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. Absolute Maximum Ratings Parameter VCES I C @ TC = 25C I C @ TC = 100C I CM I LM I F @ TC = 100C I FM t sc VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. TO-220AB Max. 600 23 14 46 46 12 46 10 20 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m) Units V A s V W C Thermal Resistance Parameter RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. ------------------------- Typ. ----------0.50 ----2 (0.07) Max. 1.2 2.5 -----80 ------ Units C/W g (oz) IRGBC30KD2 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Collector-to-Emitter Breakdown Voltage 600 V(BR)CES /T J Temperature Coeff. of Breakdown Voltage---Collector-to-Emitter Saturation Voltage ---VCE(on) ------VGE(th) Gate Threshold Voltage 3.0 V GE(th)/TJ Temperature Coeff. of Threshold Voltage ---Forward Transconductance 3.3 gfe Zero Gate Voltage Collector Current ---ICES ---V FM Diode Forward Voltage Drop ------Gate-to-Emitter Leakage Current ---IGES V(BR)CES Typ. ---0.30 2.5 3.3 2.5 ----13 6.5 ------1.4 1.3 ---Max. Units Conditions ---V VGE = 0V, IC = 250A ---- V/C VGE = 0V, IC = 1.0mA 3.8 IC = 14A VGE = 15V See Fig. 2, 5 ---V IC = 23A ---IC = 14A, TJ = 150C 5.5 VCE = VGE, IC = 250A ---- mV/C VCE = VGE, IC = 250A ---S VCE = 100V, IC = 14A 250 A VGE = 0V, VCE = 600V 2500 VGE = 0V, VCE = 600V, TJ = 150C 1.7 V IC = 12A See Fig. 13 1.6 IC = 12A, TJ = 150C 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Max. Units Conditions 58 IC = 14A 13 nC VCC = 400V 23 See Fig. 8 ---TJ = 25C ---ns IC = 14A, VCC = 480V 170 VGE = 15V, RG = 23 140 Energy losses include "tail" and ---diode reverse recovery. ---mJ See Fig. 9, 10, 11, 18 2.4 ---s VCC = 360V, TJ = 125C VGE = 15V, RG = 23, VCPK < 500V Turn-On Delay Time ---64 ---TJ = 150C, See Fig. 9, 10, 11, 18 t d(on) Rise Time ---- 100 ---ns IC = 14A, VCC = 480V tr t d(off) Turn-Off Delay Time ---- 190 ---VGE = 15V, RG = 23 Fall Time ---- 180 ---Energy losses include "tail" and tf Total Switching Loss ---- 2.2 ---mJ diode reverse recovery. Ets Internal Emitter Inductance ---- 7.5 ---nH Measured 5mm from package LE Input Capacitance ---- 740 ---VGE = 0V Cies Coes Output Capacitance ---92 ---pF VCC = 30V See Fig. 7 Reverse Transfer Capacitance ---- 9.4 --- = 1.0MHz Cres Diode Reverse Recovery Time ---42 60 ns TJ = 25C See Fig. t rr ---80 120 TJ = 125C 14 IF = 12A Diode Peak Reverse Recovery Current ---- 3.5 6.0 A TJ = 25C See Fig. Irr ---- 5.6 10 TJ = 125C 15 VR = 200V Diode Reverse Recovery Charge ---80 180 nC TJ = 25C See Fig. Q rr ---- 220 600 TJ = 125C 16 di/dt = 200A/ 180 s di(rec)M/dtDiode Peak Rate of Fall of Recovery ------A/s TJ = 25C See Fig. During t b ---120 Notes: ---TJ = 125C =80%(V CES), VGE=20V, L=10H, Pulse width 5.0s, VCC 17 single shot. RG = 23, ( See fig. 19 ) Repetitive rating; VGE=20V, pulse width limited by max. junction temperature. ( See fig. 20 ) Pulse width 80s; duty factor 0.1%. Qg Qge Q gc t d(on) tr t d(off) tf Eon Eoff Ets tsc Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Min. ------------------------------10 Typ. 39 8.7 15 67 120 110 94 1.1 0.5 1.6 ---- IRGBC30KD2 15 Duty cycle: 50% TJ = 125C Tsink = 90C Gate dr ive as specified Turn-on losses include effects of reverse recovery Power Dissipation = 21W 12 Load Current (A) 9 60% of rated voltage 6 3 0 0.1 1 10 A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 IC , Collector-to-Emitter Current (A) T = 25C J TJ = 150C 10 IC , Collector-to-Emitter Current (A) TJ = 150C 10 TJ = 25C 1 0.1 0.1 1 VGE = 15V 20s PULSE WIDTH A 10 1 5 10 VCC = 100V 5s PULSE WIDTH A 15 20 VCE , Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics IRGBC30KD2 25 VCE , Collector-to-Emitter Voltage (V) Maximum DC Collector Current (A) VGE = 15V 6.0 VGE = 15V 80s PULSE WIDTH 20 5.0 I C = 28A 4.0 15 3.0 10 I C = 14A 2.0 I C = 7.0A 1.0 5 0 25 50 75 100 125 A 150 0.0 -60 A -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature (C) TC, Case Temperature (C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 P DM 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) t 1 t 2 Notes: 1. Duty fact or D = t 1 /t 2 0.01 0.00001 2. Peak TJ = PDM x Z thJC + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case IRGBC30KD2 1400 1200 VGE , Gate-to-Emitter Voltage (V) A V GE = 0V, f = 1MHz Cies = Cge + C gc , Cce SHORTED Cres = C gc Coes = C ce + C gc 20 VCE = 400V I C = 14A 16 C, Capacitance (pF) 1000 Cies 800 12 C oes 600 8 400 4 200 Cres 0 1 10 0 0 10 20 30 A 40 100 VCE, Collector-to-Emitter Voltage (V) Qg , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 1.80 Total Switching Losses (mJ) 1.72 Total Switching Losses (mJ) 1.76 VCC VGE TC IC = 480V = 15V = 25C = 14A 100 RG = 23 VG E = 15V VC C = 480V 10 I C = 24A 1.68 I C = 14A 1 1.64 I C = 7.0A 1.60 1.56 0 10 20 30 40 50 A 60 R G , Gate Resistance () 0.1 -60 A -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature (C) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature IRGBC30KD2 8.0 6.0 IC , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG = 23 T C = 150C V CC = 480V V GE = 15V 100 VGE = 20V TJ = 125C SAFE OPERATING AREA 4.0 10 2.0 0.0 0 10 20 A 30 1 1 10 100 A 1000 I C , Collector-to-Emitter Current (A) VCE, Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA Instantaneous Forward Current - I F (A) TJ = 150C 10 TJ = 125C TJ = 25C 1 0.4 0.8 1.2 1.6 2.0 2.4 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current IRGBC30KD2 160 100 VR = 200V TJ = 125C TJ = 25C 120 VR = 200V TJ = 125C TJ = 25C I F = 24A I F = 12A 80 I IRRM - (A) I F = 24A 10 t rr - (ns) I F = 12A IF = 6.0A I F = 6.0A 40 0 100 di f /dt - (A/s) 1000 1 100 di f /dt - (A/s) 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif /dt 600 10000 VR = 200V TJ = 125C TJ = 25C VR = 200V TJ = 125C TJ = 25C di(rec)M/dt - (A/s) 400 1000 Q RR - (nC) IF = 6.0A I F = 24A I F = 12A I F = 12A 100 200 IF = 6.0A I F = 24A 0 100 di f /dt - (A/s) 1000 10 100 di f /dt - (A/s) 1000 Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M /dt vs. dif/dt IRGBC30KD2 90% Vge +Vge Same type device as D.U.T. Vce Ic 80% of Vce 430F D.U.T. 10% Vce Ic 90% Ic 5% Ic td(off) tf Eoff = t1+5S Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg +Vg trr Ic Qrr = trr id dt tx tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk Ic 10% Irr Vcc Vpk Irr td(on) tr 5% Vce t2 Eon = Vce ie dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3 DIODE RECOVERY WAVEFORMS t4 Erec = Vd id dt t3 t1 t4 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr IRGBC30KD2 Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Fig. 18e - Macro Waveforms for Test Circuit of Fig. 18a L 1000V 50V 6000F 100V Vc* D.U.T. R L= 0 - 480V 480V 4 X IC @25C Fig. 19 - Clamped Inductive Load Test Circuit 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) Fig. 20 - Pulsed Collector Current Test Circuit 4.69 (.185) 4.20 (.165) -B1.32 (.052) 1.22 (.048) NOTES: 1 DIMENSIONS & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 DIMENSIONS ARE SHOWN MILLIMETERS (INCHES). 4 CONFORMS TO JEDEC OUTLINE TO-220AB. 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) 1.15 (.045) MIN 4 15.24 (.600) 14.84 (.584) 1 2 3 3.96 (.160) 3X 3.55 (.140) 14.09 (.555) 13.47 (.530) LEAD ASSIGNMENTS 1 - GATE 2 - COLLECTOR 3 - EMITTER 4 - COLLECTOR 4.06 (.160) 3.55 (.140) 0.93 (.037) 0.69 (.027) MBAM 3X 1.40 (.055) 1.15 (.045) 3X 3 X 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 0.36 (.014) 2.54 (.100) 2X CONFORMS TO JEDEC OUTLINE TO-220AB Dimensions in Millimeters and (Inches) |
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