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| Schottky Barrier Diodes (SBD) MA3D799 Silicon epitaxial planar type (cathode common) Unit : mm For switching power supply 9.9 0.3 4.6 0.2 15.0 0.5 I Features * TO-220D package * Allowing to rectify under (IF(AV) = 10 A) condition * Cathode common dual type * Low VF (forward voltage) type: VF < 0.47 V(at IF = 5 A) 3.2 0.1 13.7 0.2 4.2 0.2 1.4 0.2 1.6 0.2 0.8 0.1 2.54 0.3 3 5.08 0.5 3.0 0.5 2.9 0.2 2.6 0.1 0.55 0.15 I Absolute Maximum Ratings Ta = 25C Parameter Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VRRM IF(AV) IFSM Tj Tstg Rating 30 10 120 -40 to +125 -40 to +125 Unit V A A C C 1 2 1 : Anode 2 : Cathode(common) 3 : Anode TO-220D package Note) * : Half sine-wave; 10 ms/cycle I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) High voltage rectification Symbol IR VF Rth(j-c) VR = 30 V IF = 5 A Direct current (between junction and case) Conditions Min Typ Max 3 0.47 3 Unit mA V C/W Note) Rated input/output frequency: 150 MHz 1 MA3D799 IF V F 102 0.8 0.7 Schottky Barrier Diodes (SBD) VF Ta 102 Ta = 125C IR VR 10 75C 25C 10 Forward voltage VF (V) Forward current IF (A) Ta = 125C 1 - 20C 0.6 0.5 0.4 0.3 0.2 0.1 IF = 10 A 5A 1A Reverse current IR (mA) 75C 1 10-1 10-1 25C 10-2 10-2 10-3 0 0.1 0.2 0.3 0.4 0.5 0.6 0 -40 10-3 0 40 80 120 160 200 0 10 20 30 40 50 60 Forward voltage VF (V) Ambient temperature Ta (C) Reverse voltage VR (V) IR T a 102 VR = 30 V 10 2.0 Ct VR 16 PD(AV) IF(AV) Average forward power PD(AV) (W) 14 12 10 8 6 4 2 0 1/3 1/2 DC t0 / t1 = 1/6 Terminal capacitance Ct (pF) 20 V 10 V Reverse current IR (mA) 1.5 1 1.0 10-1 10-2 0.5 10-3 -40 0 0 40 80 120 160 200 0 5 10 15 20 25 30 0 2 4 6 8 10 12 Ambient temperature Ta (C) Reverse voltage VR (V) Average forward current IF(AV) (A) IF(AV) TC 16 Average forward current IF(AV) (A) 14 12 10 8 6 4 2 0 20 t0 t1 t0 / t1 = 1/2 1/3 DC 1/6 40 60 80 100 120 140 Case temperature TC (C) 2 |
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