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| STP1N120 N-channel 1200V - 30 - 500mA - TO-220 Zener - protected SuperMESHTM Power MOSFET PRELIMINARY DATA General features Type STP1N120 VDSS 1200V RDS(on) < 38 ID 500mA PW 45W 100% avalanche tested Extremely high dv/dt capability ESD improved capability New high voltage benchmark Gate charge minimized 1 3 2 TO-220 Description The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmeshTM products. Internal schematic diagram Applications Switching application Order codes Part number STP1N120 Marking P1N120 Package TO-220 Packaging Tube September 2006 Rev 1 1/10 www.st.com 10 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents STP1N120 Contents 1 2 3 4 5 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuit ................................................ 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2/10 STP1N120 Electrical ratings 1 Electrical ratings Table 1. Symbol VDS VGS ID ID IDM (1) Absolute maximum ratings Parameter Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Derating factor Value 1200 30 500 315 2 0.36 45 Tbd -55 to 150 Unit V V mA mA A W/C W V/ns C PTOT dv/dt (2) Tj Tstg Total dissipation at TC = 25C Peak diode recovery voltage slope Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area 2. ISD 1A, di/dt 200A/s, VDD 960 Table 2. Symbol Rthj-case Thermal data Parameter Thermal resistance junction-case max Value 2.78 62.5 300 Unit C/W C/W C Rthj-amb (1) Thermal resistance junction-amb max Tl Maximum lead temperature for soldering purpose 1. When mounted on 1inch FR-4 board, 2 oz Cu Table 3. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or notrepetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj=25C, ID=IAS, VDD= 50V) Max value Tbd Tbd Unit A mJ 3/10 Electrical characteristics STP1N120 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 4. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1mA, VGS= 0 VDS = Max rating, VDS = Max rating,Tc=125C VGS = 20V VDS= VGS, ID = 50A VGS= 10V, ID= 0.25A 3 3.75 30 Min. 1200 1 50 10 4.5 38 Typ. Max. Unit V A A A V Table 5. Symbol Ciss Coss Crss Qg Qgs Qgd Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions Min. Typ. 130 22 3 7 Tbd Tbd Max. Unit pF pF pF nC nC nC VDS =25V, f=1MHz, VGS=0 VDD=960V, ID = 500mA VGS =10V (see Figure 2) 4/10 STP1N120 Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions Min. Typ. Tbd Tbd Tbd Tbd Max. Unit ns ns ns ns Tbd Table 7. Symbol ISD ISDM VSD(1) trr Qrr IRRM trr Qrr IRRM 1. Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD=1A, VGS=0 ISD=1A, VDD=100V di/dt = 50A/s,Tj=25C (see Figure 6) ISD=1A,VDD=100V di/dt=50A/s,Tj=150C (see Figure 6) Tbd Tbd Tbd Tbd Tbd Tbd Test conditions Min Typ. Max 500 2 Tbd Unit mA A V ns nC A ns nC A Pulsed: pulse duration = 300s, duty cycle 1.5% Table 8. Symbol Gate-source zener diode Parameter Test conditions Min 30 Typ. Max Unit V BVGSO (1) Gate-source breakdown voltage Igs 1mA, (open drain) 1. The built-in-back zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possibile voltage transients that may occasionally be applied from gate to source. In this respect the zener voltage is appropriate to achieve an efficient and osteffective intervention to protect the device's integrity. These integrated zener diodes thus avoid the usage of external components. 5/10 Test circuit STP1N120 3 Figure 1. Test circuit Switching times test circuit for resistive load Figure 2. Gate charge test circuit Figure 3. Test circuit for inductive load Figure 4. switching and diode recovery times Unclamped inductive load test circuit Figure 5. Unclamped inductive waveform Figure 6. Switching time waveform 6/10 STP1N120 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/10 Package mechanical data STP1N120 TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 8/10 STP1N120 Revision history 5 Revision history Table 9. Date 14-Sep-2006 Revision history Revision 1 First release Changes 9/10 STP1N120 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 10/10 |
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