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| Advance Product Information June 28, 2004 12-18 GHz Ku-Band 2-Stage Driver Amplifier Key Features * * * * * * TGA2506-EPU 12-18 GHz Bandwidth 17 dB Nominal Gain > 14 dBm P1dB Bias: 5,6,7 V, 40 10% mA Self Bias 0.5 um 3MI mmW pHEMT Technology Chip Dimensions: 1.19 x 0.83 x 0.1 mm (0.047 x 0.031 x 0.004) in Preliminary Measured Data Bias Conditions: Vd = 6 V, Id = 40 mA 20 0 Primary Applications * * * Return Loss (dB) Point to Point Radio Military Ku-Band Space Ku-Band VSAT IRL 18 Gain (dB) 16 14 12 10 8 8 10 12 14 16 18 20 22 Frequency (GHz) Gain ORL -5 -10 -15 -20 -25 -30 * 16 14 12 P1dB (dB m ) 10 8 6 4 2 0 11 12 13 14 15 16 17 18 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information June 28, 2004 TGA2506-EPU TABLE I MAXIMUM RATINGS 1/ SYMBOL V + PARAMETER Positive Supply Voltage Positive Supply Current (Quiescent) Input Continuous Wave Power Power Dissipation Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature VALUE 8V 57 mA 20 dBm 0.45 150 C 320 0C -65 to 150 0C 0 NOTES 2/ 2/ I+ PIN PD TCH TM TSTG 2/ 3/ 4/ 5/ 1/ 2/ 3/ 4/ 5/ These ratings represent the maximum operable values for this device Combinations of supply voltage, supply current, input power, and output power shall not exceed P D. When operated at this bias condition with a base plate temperature of 70 0C, the median life is reduced to 1E+7 hrs. Combinations of supply voltage, supply current, input power, and output power shall not exceed P D. These ratings apply to each individual FET. TABLE II DC PROBE TESTS (TA = 25 C Nominal) SYMBOL VBVGS2 VBVGD2 VP2 PARAMETER Breakdown Voltage gate-source Breakdown Voltage gate-drain Pinch-off Voltage MINIMUM -30 -30 -1.5 MAXIMUM -11 -11 -0.3 VALUE V V V Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 2 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information June 28, 2004 TGA2506-EPU TABLE III ELECTRICAL CHARACTERISTICS (Ta = 25 0C, Nominal) PARAMETER Drain Operating Quiescent Current Small Signal Gain Input Return Loss Output Return Loss Output Power @ 1 dB Compression Gain Noise Figure (@ Mid-band) TYPICAL 6 40 10% Self Bias 17 15 15 14 5.5 UNITS V mA dB dB dB dBm dB TABLE IV THERMAL INFORMATION PARAMETER TEST CONDITIONS Vd = 6 V Id = 40 mA Pdiss = 0.24 W TCH O ( C) 99 RTJC (qC/W) 121 TM (HRS) 1.4E+8 RJC Thermal Resistance (channel to Case) Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo o Carrier at 70 C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 3 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information June 28, 2004 TGA2506-EPU Preliminary Measured Data Bias Conditions: Vd = 5, 6, 7 V, Id = 40 mA 20 19 18 17 Gain (dB) 16 15 14 13 12 11 10 11 12 13 14 15 Frequency (GHz) 16 17 18 19 7V 6V 5V Bias Conditions: Vd = 6 V, Id = 40 mA 24 22 Gain Over Temperature (dB) 20 18 16 14 12 10 8 6 4 11 12 13 14 15 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 4 -40 0C +25 0C +70 0C 16 17 18 19 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information June 28, 2004 TGA2506-EPU Preliminary Measured Data Bias Conditions: Vd =5, 6, 7 V, Id = 40 mA 0 -5 -10 -15 -20 -25 -30 -35 -40 11 12 13 14 15 Frequency (GHz) 16 17 18 19 5V Input Return Loss (dB) 7V 6V 0 -5 Output Return Loss (dB) -10 -15 -20 -25 -30 -35 -40 11 12 13 14 15 Frequency (GHz) 16 17 18 19 5V 6V 7V Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 5 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information June 28, 2004 TGA2506-EPU Preliminary Measured Data Bias Conditions: Vd = 5, 6, 7 V, Id = 40 mA 20 19 Pout @ 1dB Gain Compression (dBm) 18 17 16 15 14 13 12 11 10 12 13 14 15 Frequency (GHz) 16 17 18 7V 6V 5V 20 Bias Conditions: Vd = 5, 6, 7 V, Id = 40 mA, Frequency @ 15GHz 19 15 18 Pout (dBm) 7V 5 6V 16 0 15 5V -5 14 -10 -25 -23 -21 -19 -17 -15 -13 -11 -9 -7 -5 -3 -1 1 Pin (dBm) 13 Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 6 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Power Gain (dB) 10 17 Advance Product Information June 28, 2004 TGA2506-EPU Preliminary Measured Data Bias Conditions: Vd = 6 V, Id = 40 mA 30 25 Frequency @ 12 GHz 20 OIP3 (dBm) 15 10 5 0 1 2 3 4 5 6 7 8 9 10 11 12 Output Power per Tone (dBm) 40 35 30 OIP3 (dBm) 25 Frequency @ 14 GHz 20 15 10 5 1 2 3 4 5 6 7 8 9 10 11 12 Output Power per Tone (dBm) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 7 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information June 28, 2004 TGA2506-EPU Preliminary Measured Data Bias Conditions: Vd = 6 V, Id = 40 mA 8.0 7.5 7.0 Noise Figure (dB) 6.5 6.0 5.5 5.0 4.5 4.0 12 13 14 15 16 17 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 8 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information June 28, 2004 TGA2506-EPU Mechanical Drawing GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 9 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information June 28, 2004 TGA2506-EPU Chip Assembly Diagram This configuration is for a self-bias logic pad current search with connection for bin # 1 . See Table IV for alternate bin # to get the current typical of 40 10% mA. TABLE IV PAD CONNECTIONS BIN NO. 1 2 3 4 CONNECTION Pad 4 to Pad 5 Pad 4 to Pad 6 Pad 4 to Pad 7 Pad 4 to Pad 8 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 10 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information June 28, 2004 TGA2506-EPU Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Maximum stage temperature is 200C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 11 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com |
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