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| TSHF5200 Vishay Telefunken High Speed IR Emitting Diode in o 5 mm (T-13/4) Package Description TSHF5200 is a high speed infrared light emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic package. The new technology combines the high speed of DH- GaAlAs with the efficiency of standard GaAlAs and the low forward voltage of the standard GaAs technology. The TSHF5200 emitter is suitable for serial infrared links according to the IrDA-standard. 94 8390 Features D D D D D D D D D High modulation bandwidth (10 MHz) High radiant power Low forward voltage Suitable for high pulse current operation Standard T-13/4 (o 5 mm) package Angle of half intensity = 10 Peak wavelength lp = 870 nm High reliability Good spectral matching to Si photodetectors Applications Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements. TSHF5200 is ideal for the design of transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK / FSK - coded, 450 kHz or 1.3 MHz). Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 1.5 160 100 -40...+100 -40...+100 260 270 Unit V mA mA A mW C C C C K/W tp/T = 0.5, tp = 100 ms tp = 100 ms t x 5sec, 2 mm from case Document Number 81023 Rev. 3, 02-Aug-99 www.vishay.de * FaxBack +1-408-970-5600 1 (6) TSHF5200 Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Forward Voltage g Temp. Coefficient of VF Reverse Current Junction Capacitance Radiant Intensity y Radiant Power Temp. Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of lp Rise Time Fall Time Test Conditions IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 ms IF = 100mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 ms IF = 100 mA, tp = 20 ms IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA Symbol VF VF TKVF IR Cj Ie Ie TKfe Min Typ 1.35 2.4 -1.7 160 100 1000 35 -0.7 10 870 40 0.2 30 30 Max 1.6 Unit V V mV/K 10 50 mA fe TKlp tr tf lp Dl pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns www.vishay.de * FaxBack +1-408-970-5600 2 (6) Document Number 81023 Rev. 3, 02-Aug-99 TSHF5200 Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specified) 180 PV - Power Dissipation ( mW ) 160 140 120 100 80 60 40 20 0 0 16084 104 IF - Forward Current ( mA ) 103 102 101 100 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C ) 94 8880 0 1 2 3 4 VF - Forward Voltage ( V ) Figure 1. Power Dissipation vs. Ambient Temperature 120 IF - Forward Current ( mA ) 100 80 60 40 20 0 0 16085 Figure 4. Forward Current vs. Forward Voltage 1.2 V Frel - Relative Forward Voltage 1.1 IF = 10 mA 1.0 0.9 0.8 0.7 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C ) 94 7990 e 0 20 40 60 80 100 Tamb - Ambient Temperature ( C ) Figure 2. Forward Current vs. Ambient Temperature Figure 5. Relative Forward Voltage vs. Ambient Temperature 1000 I e - Radiant Intensity ( mW/sr ) 101 Tamb<57_C I F - Forward Current ( A ) tp / T = 0.01, IFSM = 1 A 0.02 100 0.05 0.1 0.2 0.5 10-1 10-2 100 10 1 0.1 10-1 100 101 tp - Pulse Duration ( ms ) 102 94 8881 100 16086 101 102 103 IF - Forward Current ( mA ) 104 Figure 3. Pulse Forward Current vs. Pulse Duration Figure 6. Radiant Intensity vs. Forward Current Document Number 81023 Rev. 3, 02-Aug-99 www.vishay.de * FaxBack +1-408-970-5600 3 (6) TSHF5200 Vishay Telefunken 1000 1.25 Fe - Radiant Power ( mW ) Fe - Radiant Power ( mW ) 100 1.0 0.75 0.5 10 1 0.25 0 780 0.1 100 94 8007 e 101 102 103 IF - Forward Current ( mA ) 104 95 9886 l - Wavelength ( nm ) 0 10 20 880 980 Figure 7. Radiant Power vs. Forward Current 1.6 Figure 9. Relative Radiant Power vs. Wavelength 30 1.2 I e rel / Fe rel Ie rel - Relative Radiant Intensity 40 1.0 0.9 0.8 0.7 50 60 70 80 0.8 0.4 0 -10 0 10 94 8882 50 100 140 15989 0.6 0.4 0.2 0 0.2 0.4 0.6 Tamb - Ambient Temperature ( C ) Figure 8. Rel. Radiant Intensity\Power vs. Ambient Temperature Figure 10. Relative Radiant Intensity vs. Angular Displacement www.vishay.de * FaxBack +1-408-970-5600 4 (6) Document Number 81023 Rev. 3, 02-Aug-99 TSHF5200 Vishay Telefunken Dimensions in mm 95 10916 Document Number 81023 Rev. 3, 02-Aug-99 www.vishay.de * FaxBack +1-408-970-5600 5 (6) TSHF5200 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de * FaxBack +1-408-970-5600 6 (6) Document Number 81023 Rev. 3, 02-Aug-99 |
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