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| DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D050 1N4531; 1N4532 High-speed diodes Product specification Supersedes data of April 1996 1996 Sep 03 Philips Semiconductors Product specification High-speed diodes FEATURES * Hermetically sealed leaded glass SOD68 (DO-34) package * High switching speed: max. 4 ns * Continuous reverse voltage: max. 75 V * Repetitive peak reverse voltage: max. 75 V * Repetitive peak forward current: max. 450 mA. APPLICATIONS * High-speed switching * Protection diodes in reed relays. DESCRIPTION 1N4531; 1N4532 The 1N4531, 1N4532 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded glass SOD68 (DO-34) packages. k handbook, halfpage a MAM156 The diodes are type branded. Fig.1 Simplified outline (SOD68; DO-34) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 C prior to surge; see Fig.4 t = 1 s t = 1 ms t=1s Ptot Tstg Tj total power dissipation storage temperature junction temperature Tamb = 25 C - - - - -65 - 4 1 0.5 500 +200 200 A A A mW C C see Fig.2 CONDITIONS MIN. - - - - MAX. 75 75 200 450 V V mA mA UNIT 1996 Sep 03 2 Philips Semiconductors Product specification High-speed diodes ELECTRICAL CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current IN4531 IN4532 Cd diode capacitance IN4531 IN4532 trr reverse recovery time IN4531 IN4532 reverse recovery time IN4532 Vfr forward recovery voltage when switched from IF = 10 mA to IR = 60 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 when switched from IF = 100 mA; tr 30 ns; see Fig.8 see Fig.5 VR = 20 V VR = 20 V; Tj = 150 C VR = 50 V VR = 50 V; Tj = 150 C f = 1 MHz; VR = 0; see Fig.6 CONDITIONS IF = 10 mA; see Fig.3 1N4531; 1N4532 MIN. - - - - - - - - - - - MAX. 1000 25 50 100 100 4 2 4 2 4 3 UNIT mV nA A nA A pF pF ns ns ns V THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on a printed circuit-board without metallization pad. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient CONDITIONS lead length 5 mm lead length 5 mm; note 1 VALUE 120 350 UNIT K/W K/W 1996 Sep 03 3 Philips Semiconductors Product specification High-speed diodes GRAPHICAL DATA 1N4531; 1N4532 handbook, halfpage 300 MBG450 handbook, halfpage 600 MBG458 IF (mA) 200 IF (mA) 400 (1) (2) (3) 100 200 0 0 100 Tamb (oC) 200 0 0 (1) Tj = 175 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values. 1 VF (V) 2 Lead length 5 mm. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. 102 handbook, full pagewidth IFSM (A) MBG704 10 1 10-1 1 10 102 103 tp (s) 104 Based on square wave currents. Tj = 25 C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Sep 03 4 Philips Semiconductors Product specification High-speed diodes 1N4531; 1N4532 103 handbook, halfpage IR (A) MGD010 MGD004 handbook, halfpage 1.2 10 2 Cd (pF) 1.0 10 0.8 1 10-1 0.6 10-2 0 100 Tj (oC) 200 0.4 0 10 VR (V) 20 VR = 50 V Solid line; maximum values. Dotted line; typical values. f = 1 MHz; Tj = 25 C. Fig.5 Reverse current as a function of junction temperature. Fig.6 Diode capacitance as a function of reverse voltage; typical values. 1996 Sep 03 5 Philips Semiconductors Product specification High-speed diodes 1N4531; 1N4532 handbook, full pagewidth tr D.U.T. 10% SAMPLING OSCILLOSCOPE R i = 50 VR 90% tp t RS = 50 V = VR I F x R S IF IF t rr t (1) MGA881 input signal output signal (1) IR = 1 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 k 450 I 90% V R S = 50 D.U.T. OSCILLOSCOPE R i = 50 10% MGA882 V fr t tr tp t input signal output signal Fig.8 Forward recovery voltage test circuit and waveforms. 1996 Sep 03 6 Philips Semiconductors Product specification High-speed diodes PACKAGE OUTLINE 1N4531; 1N4532 handbook, full pagewidth 0.55 max 1.6 max 25.4 min 3.04 max 25.4 min MSA212 - 1 Dimensions in mm. Fig.9 SOD68 (DO-34). DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1996 Sep 03 7 This datasheet has been download from: www..com Datasheets for electronics components. |
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