 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Power Transistors 2SB1255 Silicon PNP epitaxial planar type Darlington Unit: mm (0.7) For power amplification Complementary to 2SD1895 21.00.5 15.00.3 11.00.2 5.00.2 (3.2) 16.20.5 (3.5) Solder Dip * Optimum for 90 W Hi-Fi output * High forward current transfer ratio hFE: 5 000 to 30 000 * Low collector to emitter saturation voltage VCE(sat): < -2.5 V * Full-pack package which can be installed to the heat sink with one screw 15.00.2 I Features 3.20.1 2.00.2 1.10.1 2.00.1 0.60.2 I Absolute Maximum Ratings TC = 25C Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation TC = 25C Ta = 25C Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating -160 -140 -8 -12 -15 100 3 150 -55 to +150 C C Unit V V V A A W 1 5.450.3 10.90.5 2 3 1 : Base 2 : Collector 3 : Emitter EIAJ : SC-96 TOP-3F-A Package Internal Connection C B Junction temperature Storage temperature E I Electrical Characteristics TC = 25C Parameter Collector cutoff current Symbol ICBO ICEO Emitter cutoff current Collector to emitter voltage Forward current transfer ratio IEBO VCEO hFE1 hFE2 * Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Note) *: Rank classification Rank hFE2 Q P VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = -160 V, IE = 0 VCE = -140 V, IB = 0 VEB = -5 V, IC = 0 IC = -30 mA, IB = 0 VCE = -5 V, IC = -1 A VCE = -5 V, IC = -7 A IC = -7 A, IB = -7 mA IC = -7 A, IB = -7 mA VCE = -10 V, IC = - 0.5 A, f = 1 MHz IC = -7 A, IB1 = -7 mA, IB2 = 7 mA, VCC = -50 V 20 1.0 1.5 1.2 -140 2 000 5 000 30 000 -2.5 -3.0 V V MHz s s s Min Typ Max -100 -100 -100 Unit A A A V 5 000 to 15 000 8 000 to 30 000 1 2SB1255 PC T a 120 -12 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=3W) (1) TC=25C -10 IB=-2mA -1mA - 0.9mA - 0.8mA - 0.7mA - 0.6mA - 0.5mA -4 - 0.4mA - 0.3mA -2 (2) (3) 0 0 20 40 60 80 100 120 140 160 0 0 -2 -4 -6 -8 -10 -12 - 0.2mA Power Transistors IC VCE Collector to emitter saturation voltage VCE(sat) (V) -100 VCE(sta) IC IC/IB=1000 Collector power dissipation PC (W) 100 -30 80 Collector current IC (A) -8 -10 TC=100C -3 25C -25C -1 60 -6 40 20 - 0.3 - 0.1 - 0.1 - 0.3 -1 -3 -10 -30 -100 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) IC -100 hFE IC 100000 VCE=-5V 1000 Cob VCB Collector output capacitance Cob (pF) IE=0 f=1MHz TC=25C Base to emitter saturation voltage VBE(sat) (V) IC/IB=1000 Forward current transfer ratio hFE 30000 TC=100C -30 25C 300 10000 -25C 3000 1000 300 100 30 10 - 0.01 - 0.03 - 0.1 - 0.3 -10 100 -3 TC=-25C -1 100C 25C 30 10 - 0.3 3 - 0.1 - 0.1 - 0.3 -1 -3 -10 -30 -100 -1 -3 -10 1 -1 -3 -10 -30 -100 Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V) ton, tstg, tf IC 100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=1000 (-IB1=IB2) VCC=-50V TC=25C -100 -30 Area of safe operation (ASO) Non repetitive pulse TC=25C ICP IC -3 -1 10ms DC t=1ms Switching time ton,tstg,tf (s) 10 3 tstg tf 1t on 0.3 0.1 0.03 0.01 0 -4 -8 Collector current IC (A) -16 -10 - 0.3 - 0.1 - 0.03 - 0.01 -1 -12 -3 -10 -30 -100 -300 -1000 Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) t 10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.3A (3W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink 2SB1255 Thermal resistance Rth(t) (C/W) 1000 100 (1) (2) 10 1 0.1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR |
Price & Availability of 2SB1255
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |