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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3575
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3575 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
5 ORDERING INFORMATION
PART NUMBER 2SK3575 2SK3575-S 2SK3575-ZK 2SK3575-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMDNote
FEATURES
*4.5V drive available *Low on-state resistance RDS(on)1 = 4.5 m MAX. (VGS = 10 V, ID = 42 A) *Low gate charge QG = 70 nC TYP. (VDD = 24 V, VGS = 10 V, ID = 83 A) *Avalanche capability ratings *Surface mount device available
Note TO-220SMD package is produced only in Japan.
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
30 20 83 332 1.5 105 150 -55 to +150 57 325
V V A A W W C C A mJ
Total Power Dissipation (TA = 25C) Total Power Dissipation (TC = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2 Note2
IAS EAS
Notes 1. PW 10 s, Duty Cycle 1% 2. Starting Tch = 25C, VDD = 15 V, RG = 25 , VGS = 20 0 V
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D16261EJ2V0DS00 (2nd edition) Date Published September 2002 NS CP(K) Printed in Japan
The mark ! shows major revised points.
(c)
2002
2SK3575
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = 24 V VGS = 10 V ID = 83 A IF = 83 A, VGS = 0 V IF = 83 A, VGS = 0 V di/dt = 100 A/s TEST CONDITIONS VDS = 30 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 42 A VGS = 10 V, ID = 42 A VGS = 4.5 V, ID = 42 A VDS = 10 V VGS = 0 V f = 1 MHz VDD = 15 V, ID = 42 A VGS = 10 V RG = 10 1.5 27 3.3 4.3 3700 1430 500 26 27 110 40 70 12 20 1.0 61 94 4.5 6.4 MIN. TYP. MAX. 10 100 2.5 UNIT
A
nA V S m m pF pF pF ns ns ns ns nC nC nC V ns nC
5
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V 50
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L VDD PG. RG
VGS RL VDD VDS
90% 90% 10% 10%
VGS
Wave Form
0
10%
VGS
90%
BVDSS IAS ID VDD VDS
VGS 0 = 1 s Duty Cycle 1%
VDS
VDS
Wave Form
0 td(on) ton
tr
td(off) toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA PG. 50
RL VDD
2
Data Sheet D16261EJ2V0DS
2SK3575
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Percentage of Rated Power - %
120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 120
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W
100 80 60 40 20 0 0 25 50 75 100 125 150 175
TC - Case Temperature - C
TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA
1000 ID(pulse)
RDS(on) Lim ited PW = 10 s
ID - Drain Current - A
100 ID(DC) 10
Power Dissipation Lim ited 100 s
1 ms 10 m s DC
1
TC = 25C Single pulse
0.1 0.1 1 10 100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
rth(t) - Transient Thermal Resistance - C/W
Rth(ch-A) = 83.3C/W
10
1
Rth(ch-C) = 1.19C/W
0.1
Single pulse
0.01 10
100
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D16261EJ2V0DS
3
2SK3575
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
350
Pulsed
FORWARD TRANSFER CHARACTERISTICS
1000
300
ID - Drain Current - A
ID - Drain Current - A
100
250
VGS = 10 V
200
4.5 V
10
Tch = 150C 75C 25C -55C
150 100 50 0 0 0.5 1 1.5 2
1
0.1
VDS = 10 V Pulsed
0.01 0 1 2 3 4 5
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S
3
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
100
Tch = -55C 25C 75C 150C
VGS(off) - Gate Cut-off Voltage - V
VDS = 10 V ID = 1 mA
2.5 2 1.5 1 0.5 0 -50 0 50 100 150
10
1
VDS = 10 V Pulsed
0.1 0.1 1 10 100
Tch - Channel Temperature - C
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - m
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
10
Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
10
Pulsed
8
8
6
VGS = 4.5 V
6
4
10 V
4
ID = 42 A
2
2
0 1 10 100 1000
0 0 2 4 6 8 10 12 14 16 18 20
ID - Drain Current - A
VGS - Gate to Source Voltage - V
4
Data Sheet D16261EJ2V0DS
2SK3575
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
8
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000 0
Ciss, Coss, Crss - Capacitance - pF
ID = 42 A Pulsed
C iss
6
VGS = 4.5 V
1000
C o ss C rss
4
10 V
100
2
VGS = 0 V f = 1 MHz
0 -50 0 50 100 150
10 0.1 1 10 100
Tch - Channel Temperature - C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
30 12 10
VDD = 24 V 15 V VGS
VDS - Drain to Source Voltage - V
25 20 15 10 5 0
td(off)
100
td(on)
tf
8 6 4 2
ID = 83 A
10
tr
VDS
1 0.1 1 10 100
0 0 20 40 60 80
ID - Drain Current - A
QG - Gate Change - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000 1000
REVERSE RECOVERY TIME vs. DRAIN CURRENT
di/dt = 100 A/m s VGS = 0 V
100
VGS = 10 V 0V
trr - Reverse Recovery Time- ns
IF - Diode Forward Current - A
100
10
1
10
0.1
pulsed
0.01 0 0.2 0.4 0.6 0.8 1 1.2 1.4
1 0.1 1 10 100
VF(S-D) - Source to Drain Voltage - V
ID - Drain Current - A
Data Sheet D16261EJ2V0DS
5
VGS - Gate to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
VDD = 10 V VGS = 10 V R G = 10
2SK3575
SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD
1000 120
SINGLE AVALANCHE ENERGY DERATING FACTOR
VDD = 15 V RG = 25 VGS = 20 0 V IAS 57 A
IAS - Single Avalanche Current - A
Energy Derating Factor - %
100 80 60 40 20 0
100
IAS = 57 A EAS = 325 m J
10 VDD = 15 V RG=25 VGS = 20 0 V Starting T ch = 25C 1 0.01 0.1 1 10
25
50
75
100
125
150
L - Inductive Load - mH
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D16261EJ2V0DS
2SK3575
5
PACKAGE DRAWINGS (Unit: mm)
1)
3.00.3
TO-220AB(MP-25)
10.6 MAX. 10.0 TYP. 4.8 MAX.
2)
TO-262(MP-25 Fin Cut)
1.00.5
3.60.2
5.9 MIN.
4.8 MAX. 1.30.2
1.30.2
10 TYP.
15.5 MAX.
4 1 2 3
4 123
6.0 MAX.
1.30.2
1.30.2
12.7 MIN.
12.7 MIN.
8.50.2
0.750.3 2.54 TYP.
0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
0.750.1 2.54 TYP.
0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
3)
TO-263(MP-25ZK)
10.00.2
4)
1.350.3
4.450.2 1.30.2
TO-220SMD(MP-25Z)
10 TYP. 4
Note
4.8 MAX. 1.30.2
No plating
0.4 8.4 TYP. 4
1.00.5
8.0 TYP.
9.150.2
15.250.5
0.025 to 0.25
1 1.40.2
2.450.25
2
3
1.10.4
0.750.3 2.54 TYP.
P. TY P. R Y 0.5 R T 0.8 2.54 TYP.
3.00.5
8.50.2
0.50.2
0.5
0.70.15 2.54 1 2 3
0.2 8o
0 to
0.25 1.Gate 2.Drain 3.Source
2.5
4.Fin (Drain)
Note This package is produced only in Japan. EQUIVALENT CIRCUIT
Drain
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
Body Diode
Gate
degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
Source
2.80.2
1.Gate 2.Drain 3.Source 4.Fin (Drain)
Data Sheet D16261EJ2V0DS
7
2SK3575
* The information in this document is current as of September, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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