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| BUZ 72 L SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated * Logic Level Pin 1 G Type BUZ 72 L Pin 2 D Pin 3 S VDS 100 V ID 10 A RDS(on) 0.2 Package TO-220 AB Ordering Code C67078-S1327-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 10 Unit A ID IDpuls 40 TC = 25 C Pulsed drain current TC = 25 C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 10 7.9 mJ ID = 10 A, VDD = 25 V, RGS = 25 L = 885 H, Tj = 25 C Gate source voltage Gate-source peak voltage,aperiodic Power dissipation 59 VGS Vgs Ptot 14 20 V W TC = 25 C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 40 Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 3.1 75 E 55 / 150 / 56 C K/W Semiconductor Group 1 07/96 BUZ 72 L Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 100 1.6 0.1 10 10 0.12 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) 1.2 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 A VDS = 100 V, VGS = 0 V, Tj = 25 C VDS = 100 V, VGS = 0 V, Tj = 125 C Gate-source leakage current IGSS 100 nA 0.2 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 5 V, ID = 5 A Semiconductor Group 2 07/96 BUZ 72 L Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 5 7.5 680 180 90 - S pF 900 250 150 ns 20 30 VDS 2 * ID * RDS(on)max, ID = 5 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Rise time tr 85 130 VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Turn-off delay time td(off) 100 130 VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Fall time tf 55 70 VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Semiconductor Group 3 07/96 BUZ 72 L Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed A 1.2 180 460 10 40 V 1.5 ns nC Values typ. max. Unit ISM VSD trr Qrr TC = 25 C Inverse diode forward voltage VGS = 0 V, IF = 20 A Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 07/96 BUZ 72 L Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 5 V 11 A 45 W Ptot 35 30 ID 9 8 7 25 20 15 10 6 5 4 3 2 5 0 0 1 0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 C 160 TC TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C 10 2 t = 30.0s p Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 1 K/W A DS / I D 10 1 R DS (o n) = ID V 100 s ZthJC 10 0 1 ms 10 -1 D = 0.50 0.20 10 ms 10 0 0.10 10 -2 DC single pulse 0.05 0.02 0.01 10 -1 0 10 10 1 V 10 2 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 72 L Typ. output characteristics ID = (VDS) parameter: tp = 80 s 24 A 20 Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS 0.65 Ptot = 40W lk j ih g VGS [V] a 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 10.0 b c 0.55 a b c d ID 18 16 f RDS (on) 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 VGS [V] = a 2.5 2.0 3.0 b 3.5 c 4.0 d 4.5 e f 5.0 5.5 g 6.0 h i j 7.0 8.0 10.0 d e f 14 12 10 8 6 4 2 0 0.0 1.0 2.0 3.0 4.0 c ab e g h i j k dl e gf i hj 0.05 V 6.5 0.00 0 5.0 2 4 6 8 10 12 14 A 17 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max 30 A 26 parameter: tp = 80 s, VDS2 x ID x RDS(on)max 12 S 10 ID 24 22 20 18 16 14 12 10 8 6 gfs 9 8 7 6 5 4 3 2 4 2 0 0 1 0 1 2 3 4 5 6 7 8 V 10 0 4 8 12 16 20 A ID 28 VGS Semiconductor Group 6 07/96 BUZ 72 L Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 5 A, VGS = 5 V 0.65 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 0.55 RDS (on) 0.50 0.45 0.40 0.35 0.30 0.25 VGS(th) 3.6 3.2 2.8 2.4 98% 98% 2.0 typ 1.6 0.20 2% typ 1.2 0.8 0.4 -20 20 60 100 C 160 0.0 -60 -20 20 60 100 C 160 0.15 0.10 0.05 0.00 -60 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 2 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 2 nF C 10 1 A IF 10 1 Ciss Coss 10 0 10 0 Crss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -1 0 5 10 15 20 25 30 V VDS 40 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 07/96 BUZ 72 L Avalanche energy EAS = (Tj ) parameter: ID = 10 A, VDD = 25 V RGS = 25 , L = 885 H 60 mJ Typ. gate charge VGS = (QGate) parameter: ID puls = 15 A 16 V 50 EAS 45 40 VGS 12 10 35 30 25 6 20 15 10 2 5 0 20 0 40 60 80 100 120 C 160 0 10 20 30 40 nC 55 4 8 0,2 VDS max 0,8 VDS max Tj Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj ) 120 V 116 V(BR)DSS 114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 07/96 BUZ 72 L Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96 |
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