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| MITSUBISHI IGBT MODULES CM300DU-24F HIGH POWER SWITCHING USE CM300DU-24F IC ................................................................... 300A VCES ......................................................... 1200V Insulated Type 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm Tc measured point 110 E2 G2 RTC 62 0.25 6 C2E1 E2 RTC C1 15 (8.25) 80 G1 E1 CM (18.5) C2E1 E2 C1 4-6.5 MOUNTING HOLES 3-M6 NUTS 25 93 0.25 18 14 7 18 14 7 18 14 4 2.8 25 21.5 2.5 18.25 CIRCUIT DIAGRAM 0.5 0.5 7.5 8.5 0.5 0.5 29 +1.0 -0.5 21 LABEL G1 E1 6 E2 G2 Aug. 1999 4 MITSUBISHI IGBT MODULES CM300DU-24F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso -- -- Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25C Pulse TC = 25C Pulse TC = 25C Conditions Ratings 1200 20 300 600 300 600 960 -40 ~ +150 -40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 580 Unit V V A A W C C V N*m N*m g (Note 2) (Note 2) Main terminal to base plate, AC 1 min. Main Terminal M6 Mounting holes M6 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Test conditions VCE = VCES, VGE = 0V IC = 30mA, VCE = 10V VGE = VCES, VCE = 0V Tj = 25C IC = 300A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V VCC = 600V, IC = 300A, VGE = 15V VCC = 600V, IC = 300A VGE1 = VGE2 = 15V RG = 1.0, Inductive load switching operation IE = 300A IE = 300A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compoundapplied*2 (1/2 module) Tc measured point is just under the chips Min. -- 5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 1.0 Limits Typ. -- 6 -- 1.8 1.9 -- -- -- 3300 -- -- -- -- -- 17.6 -- -- -- 0.02 -- -- Max. 1 7 40 2.4 -- 120 5.1 3 -- 300 80 500 300 250 -- 3.2 0.13 0.18 -- 0.065V3 10 Unit mA V A V nF nC ns ns C V C/W Contact thermal resistance Thermal resistance External gate resistance Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone "G-746". *3 : If you use this value, Rth(f-a) should be measured just under the chips. Aug. 1999 MITSUBISHI IGBT MODULES CM300DU-24F HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) 500 400 300 Tj = 25C VGE = 20V 15 11 10 9.5 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 600 3 VGE = 15V Tj = 25C 2.5 Tj = 125C 2 1.5 1 0.5 0 9 8.5 200 100 0 8 0 0.5 1 1.5 2 2.5 3 3.5 4 0 200 400 600 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 7 5 3 2 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 Tj = 25C Tj = 25C 4 3 IC = 600A 2 IC = 300A IC = 120A EMITTER CURRENT IE (A) 102 7 5 3 2 1 0 6 8 10 12 14 16 18 20 101 0.5 1 1.5 2 2.5 3 3.5 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) 103 103 7 5 3 2 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) td(off) tf td(on) CAPACITANCE Cies, Coes, Cres (nF) 7 5 SWITCHING TIMES (ns) 3 2 102 7 5 3 2 Cies 102 7 5 3 2 101 7 5 3 2 101 7 5 3 2 tr Coes VGE = 0V Cres Conditions: VCC = 600V VGE = 15V RG = 1 Tj = 125C Inductive load 3 5 7 102 2 3 5 7 103 100 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 1 10 2 COLLECTOR CURRENT IC (A) Aug. 1999 MITSUBISHI IGBT MODULES CM300DU-24F HIGH POWER SWITCHING USE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) 7 5 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c) (C/W) 103 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j-c) = 0.13C/ W 3 FWDi part: 2 Per unit base = Rth(j-c) = 0.15C/ W 100 7 5 3 2 7 5 3 2 7 5 3 2 3 2 102 7 5 3 2 Irr trr Conditions: VCC = 600V VGE = 15V RG = 1.0 Tj = 25C Inductive load 2 3 5 7 102 2 3 5 7 103 10-1 10-1 7 5 3 2 7 5 3 2 10-2 10-2 Single Pulse TC = 25C 101 1 10 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 TMIE (s) EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) 18 16 14 12 10 8 6 4 2 0 0 IC = 300A VCC = 400V VCC = 600V 500 1000 1500 2000 2500 GATE CHARGE QG (nC) Aug. 1999 |
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