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| FDS4435BZ July 2005 FDS4435BZ 30 Volt P-Channel PowerTrench(R) MOSFET General Description This P-Channel MOSFET is produced using Fairchild (R) Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features * -8.8 A, -30 V. RDS(ON) = 20 m @ VGS = -10 V RDS(ON) = 35 m @ VGS = - 4.5 V * Extended VGSS range (-25V) for battery applications * HBM ESD protection level of 4.5 kV typical (note 3) * High performance trench technology for extremely low RDS(ON) * High power and current handling capability * Termination is Lead-free and RoHS compliant D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings -30 25 (Note 1a) Units V V A W -8.8 -50 2.5 1.2 1.0 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 C/W C/W Package Marking and Ordering Information Device Marking FDS4435BZ Device FDS4435BZ Reel Size 13'' Tape width 12mm Quantity 2500 units (c)2005 Fairchild Semiconductor Corporation FDS4435BZ Rev B (W) FDS4435BZ Electrical Characteristics Symbol Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance TA = 25C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on) VGS = 0 V, ID = -250 A -30 -24 -1 10 -1 -1.9 5 16 25 23 24 20 35 29 -3 V mV/C A A ID = -250 A, Referenced to 25C VDS = -24 V, VGS = 0 V VGS = 25 V, VDS = 0 V VDS = VGS, ID = -250 A ID = -250 A, Referenced to 25C VGS = -10 V, ID = -8.8 A VGS = -4.5 V, ID = -6.7 A VGS = -10 V, ID = -8.8 A,TJ=125C VDS = -5 V, ID = -8.8 A On Characteristics (Note 2) V mV/C m gFS S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = -15 V, V GS = 0 V, f = 1.0 MHz 1365 240 200 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qg(TOT) Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = -15 V, ID = -1 A, VGS = -10 V, RGEN = 6 12 13 68 38 23 24 109 61 41 23 ns ns ns ns nC nC nC nC Total Gate Charge, VGS = 10v Total Gate Charge, VGS = 5v Gate-Source Charge Gate-Drain Charge VDS = -15 V, ID = -8.8 A 29.0 16.5 4.4 7.3 Drain-Source Diode Characteristics and Maximum Ratings IS VSD tRR QRR Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = -2.1 A Voltage Reverse Recovery Time IF = -8.8 A, dIF/dt = 100 A/s Reverse Recovery Charge -2.1 (Note 2) A V ns nC -0.76 24 -1.2 (Note 2) 9 Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50C/W (10 sec) 62.5C/W steady state when mounted on a 2 1in pad of 2 oz copper b) 105C/W when mounted on a .04 in2 pad of 2 oz copper c) 125C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. FDS4435BZ Rev B (W) FDS4435BZ Typical Characteristics 50 VGS = -10V 40 -ID, DRAIN CURRENT (A) -6.0V 30 -5.0V 3 VGS = -3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -4.5V 2.6 2.2 -4.0V -4.0V 1.8 -4.5V -5.0V 20 -3.5V 10 -3.0V 0 0 1 2 3 -VDS, DRAIN TO SOURCE VOLTAGE (V) 4 1.4 -6.0V -8.0V -10V 1 0.6 0 10 20 30 -ID, DRAIN CURRENT (A) 40 50 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.08 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), ON-RESISTANCE (OHM) ID = -8.8A VGS = -10V ID = -4.4A 0.06 1.4 1.2 TA = 125 C 0.04 TA = 25oC 0.02 o 1 0.8 0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 0 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 50 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) 40 VGS = 0V 10 TA = 125oC 30 1 25oC 20 TA = 125oC 0.1 -55 C o -55 C 10 25oC 0 2 2.5 3 3.5 4 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) 5 o 0.01 0.001 0 0.4 0.8 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.6 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS4435BZ Rev B (W) FDS4435BZ Typical Characteristics 10 -VGS, GATE-SOURCE VOLTAGE (V) ID = -8.8A 2000 f = 1 MHz VGS = 0 V 1600 -20V CAPACITANCE (pF) VDS = -10V Ciss 1200 8 6 -15V 4 800 Coss 400 Crss 0 2 0 0 6 12 18 24 Qg, GATE CHARGE (nC) 30 36 0 5 10 15 20 25 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 100s 1ms 10ms 100ms 50 Figure 8. Capacitance Characteristics. -ID, DRAIN CURRENT (A) 40 10 SINGLE PULSE RJA = 125C/W TA = 25C 30 1 DC VGS = -10V SINGLE PULSE RJA = 125oC/W TA = 25oC 1s 20 0.1 10 0.01 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA = 125 C/W P(pk) 0.01 o 0.1 0.1 0.05 0.02 t1 t2 SINGLE PULSE 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS4435BZ Rev B (W) |
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