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GP1S93 GP1S93 s Features 1. Low height type (Height : 3.1 mm) 2. Wide gap type (Gap : 2.0 mm) Subminiature Photointerrupter s Outline Dimensions (Unit : mm) a 3. Detector side slit width : (0.3) mm Top View Internal connection diagram 2 1 4 (0.85) 1. FDDs 2. Cameras 3. Camera-integral VCRs 2.3 a s Applications 3 1 2 3 4 Anode Collector Emitter Cathode 4.5 2.0 (C0.4) 3.1 3.4 a-a section (0.3) Slit width Optical center (C0.3) S 3.6 0.5 4Z 0.4 g 3.55 0.15 - 0.1 + 0.2 g 2.54 3 4 2 1 * Tolerance : 0.2 * ( ) : Reference dimensions * The dimensions indicated by g refer to those measured from the lead base. s Absolute Maximum Ratings Parameter Forward current Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Collector current Collector power dissipation Total power dissipation Operating temperature Storage temperature *1 Soldering temperature Symbol IF VR P VCEO VECO IC PC Ptot Topr Tstg Tsol Rating 50 6 75 35 6 20 75 100 - 25 to + 85 - 40 to + 100 260 (Ta=25C) Unit mA V mW V V mA mW mW C C C Input Output 1mm or more Soldering area *1 For 5 seconds " In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device." GP1S93 s Electro-optical Characteristics Parameter Forward voltage Reverse current Dark current Collector current Collector-emitter saturation voltage Rise time Response time Fall time Symbol VF IR ICEO IC V CE(sat) tr tf Conditions IF = 20mA VR = 3V VCE = 20V IF = 5mA, V CE = 5V IF = 10mA, I C = 40 A IC = 0.1mA, VCE = 5V, R L = 1k MIN. 100 TYP. 1.2 50 50 MAX. 1.4 10 1 x 10 - 7 400 0.4 150 150 (Ta=25C) Unit V A A A V s s Input Output Transfer characteristics Fig. 1 Forward Current vs. Ambient Temperature 60 Fig. 2 Power Dissipation vs. Ambient Temperature 120 Total power dissipation 50 100 Power dissipation P (mW) Forward current I F (mA) Input side power dissipation and 40 80 output side collector power dissipation 30 60 20 40 10 20 0 - 25 0 25 50 75 85 100 0 - 25 0 25 50 75 85 100 Ambient temperature Ta (C) Ambient temperature Ta (C) Fig. 3 Forward Current vs. Forward Voltage 500 200 T a= 75C 50C 25C 0C -25C Fig. 4 Collector Current vs. Forward Current VCE =5V Ta =25C 1.0 Forward current I F (mA) 100 50 20 10 5 2 1 0 0.5 1 1.5 2 Collector current I C (mA) 0.8 0.6 0.4 0.2 2.5 3 0 0 4 8 12 16 20 Forward voltage V F (V) Forward current IF (mA) GP1S93 Fig. 5 Collector Current vs. Collector-emitter Voltage 2.0 Fig. 6 Relative Collector Current vs. Ambient Temperature 120 110 Ta =25C IF=50mA IF=5mA VCE=5V Relative collector current (%) 10 40mA 100 90 80 70 60 50 40 30 20 10 0 - 25 (mA) 1.6 Collector current I C 30mA 1.2 20mA 0.8 10mA 0.4 5mA 0 0 5 0 25 50 75 85 Collector-emitter voltage VCE (V) Ambient temperature Ta (C) Fig. 7 Collector-emitter Saturation Voltage vs. Ambient Temperature Collector-emitter saturation voltage V CE(sat) (V) 0.20 0.18 0.16 Fig. 8 Dark Current vs. Ambient Temperature 10 -6 IF =10mA IC =40 A 5 2 10 -7 VCE= 20V Dark current I CEO (A) 5 2 10 -8 0.14 0.12 0.10 0.08 0.06 5 2 10 -9 5 2 0.04 - 25 0 25 50 75 85 10 - 10 0 25 50 75 100 Ambient temperature Ta (C) Ambient temperature Ta (C) Fig. 9 Response Time vs. Load Resistance 1000 Test Circuit for Response Time VCE =5V 500 IC =100 A tr tf VCC Input RD RL Output Input 10% 90% Response time (s) 100 50 td ts Output td tr ts tf 10 5 1 0.1 1 5 10 50 100 Load resistance R L (k ) GP1S93 Fig. 10 Detecting Position Characteristics (1) 100 90 IF =5mA VCE =5V L=0 L Fig. 11 Detecting Position Characteristics (2) 100 90 IF =5mA VCE =5V L L=0 Relative collector current (%) Relative collector current (%) 0.5 1 1.5 2 2.5 80 70 60 50 40 30 20 10 0 0 80 70 60 50 40 30 20 10 0 0 0.5 1 1.5 2 Shield distance L (mm) Shield distance L (mm) q Please refer to the chapter "Precautions for Use". |
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