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| GT60M323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M323 Voltage Resonance Inverter Switching Application Unit: mm * * * * * Enhancement mode type High speed : tf = 0.09 s (typ.) (IC = 60 A) Low saturation voltage : VCE (sat) = 2.3 V (typ.) (IC = 60 A) FRD included between emitter and collector TO-3P(LH) (Toshiba package name) Maximum Ratings (Ta = 25C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Pulsed collector current Diode forward current Collector power dissipation Junction temperature Storage temperature range DC Pulsed @ Tc = 100C @ Tc = 25C @ Tc = 100C @ Tc = 25C Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 900 25 31 60 120 15 120 80 200 150 -55 to 150 Unit V V A A A JEDEC JEITA TOSHIBA 2-21F2C W C C Weight: 9.75 g (typ.) Thermal Characteristics Characteristics Thermal resistance (IGBT) Thermal resistance (diode) Symbol Rth (j-c) Rth (j-c) Max 0.625 4.0 Unit C/W C/W Equivalent Circuit Collector Marking Part No. (or abbreviation code) Gate Emitter TOSHIBA GT60M323 Lot No. JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2004-07-06 GT60M323 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Diode forward voltage Reverse recovery time Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VF trr IF = 15 A, VGE = 0 IF = 60 A, di/dt = -20 A/s Test Condition VGE = 25 V, VCE = 0 VCE = 900 V, VGE = 0 IC = 60 mA, VCE = 5 V IC = 60 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Resistive Load VCC = 600 V, IC = 60 A VGG = 15 V, RG = 51 (Note 1) Min 4.0 Typ. 2.3 4200 0.25 0.37 0.09 0.40 1.1 1.4 Max 500 0.1 7.0 2.8 0.20 1.9 3.0 V s s Unit nA mA V V pF Note 1: Switching time measurement circuit and input/output waveforms VGE 0 RG 0 VCC 0 VCE td (off) RL IC 90% 90% 10% 90% 10% tf toff 10% tr ton 2 2004-07-06 GT60M323 IC - VCE 120 Common emitter 100 Tc = -40C 10 15 120 9 8 Common emitter 100 Tc = 25C IC - VCE 10 15 9 (A) (A) Collector current IC VGE = 20 V Collector current IC 80 80 VGE = 20 V 8 60 7 60 7 40 40 20 6 1 2 3 4 5 20 6 0 0 1 2 3 4 5 0 0 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) IC - VCE 120 Common emitter 100 Tc = 125C 15 VGE = 20 V 9 80 8 10 80 Common emitter VCE = 5V IC - VGE (A) (A) Collector current IC 60 Collector current IC 60 7 40 40 20 20 Tc = 125C 25 -40 6 0 0 0 0 1 2 3 4 5 2 4 6 8 10 Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V) VCE (sat) - Tc 4 Common emitter VGE = 15 V 3 80 60 Collector-emitter saturation voltage VCE (sat) (V) 2 30 IC = 10 A 1 0 -60 -20 20 60 100 140 Case temperature Tc (C) 3 2004-07-06 GT60M323 VCE, VGE - QG 200 Common emitter 20 RL = 2.5 Tc = 25C 150 15 10000 C - VCE Common Cies emitter VGE = 0 f = 1 MHz Tc = 25C VCE (V) (V) VGE (pF) Capacitance C 1000 Collector-emitter voltage 100 VCE = 150 V 50 100 10 Gate-emitter voltage 100 Coes Cres 10 1 50 5 0 0 60 120 180 0 240 10 100 1000 10000 Gate charge QG (nC) Collector-emitter voltage VCE (V) Switching Time - RG 10 Common emitter VCC = 600 V IC = 60 A 10 VCC = 600 V RG = 51 Switching Time - IC Common emitter (s) 1 (s) VGG = 15 V Tc = 25C 1 VGG = 15 V Tc = 25C Switching time Switching time toff ton tf tr 0.1 ton toff tr tf 0.1 0.01 1 10 100 1000 0.01 0 10 20 30 40 50 60 70 Gate resistance RG () Collector current IC (A) Safe Operating Area 1000 * Single non-repetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 1000 Reverse Bias SOA Tj < 125C = VGG = 20 V RG = 10 (A) IC max (pulsed)* 100 IC max (continuous) 1 ms* 100 s* (A) Collector current IC 100 10 Collector current IC 10 s* 10 DC operation 10 ms * 1 1 10 100 1000 10000 1 1 10 100 1000 10000 Collector- emitter voltage VCE (V) Collector-emitter voltage VCE (V) 4 2004-07-06 GT60M323 ICmax - Tc (C/W) (A) 70 60 50 40 30 20 10 0 25 Common emitter VGE = 15 V 102 Tc = 25C Rth (t) - tw ICmax Rth (t) 101 Maximum DC collector current Diode stage Transient thermal impedance 100 IGBT stage 10-1 50 75 100 125 150 10-2 10-5 10-4 10-3 10-2 10-1 100 101 102 Case temperature Tc (C) Pulse width tw (s) IF - VF 100 Common collector 80 1.6 Common Collector di/dt = -20 A/s Tc = 25C 1.4 trr, Irr - IF 18 (s) (A) trr 16 trr 60 Irr 1.2 14 40 Tc = 125C 20 25 0 0 -40 0.4 0.8 1.2 1.6 2.0 2.4 1.0 12 0.8 0 20 40 60 10 80 Forward voltage VF (V) Forward current IF (A) trr, Irr - di/dt 1.6 trr Common collector IF = 60 A Tc = 25C 60 80 (s) 1.2 trr 0.8 40 0.4 Irr 20 0.0 0 40 80 120 160 0 180 di/dt (A/s) Peak reverse recovery current Reverse recovery time Irr (A) 5 2004-07-06 Peak reverse recovery current Forward current IF Reverse recovery time Irr (A) GT60M323 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 030619EAA * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 2004-07-06 |
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