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LOW NOISE L TO K-BAND GaAs MESFET
FEATURES
* LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz * HIGH ASSOCIATED GAIN GA = 9.5 dB TYP at f = 12 GHz * LG = 0.3 m, WG = 280 m * EPITAXIAL TECHNOLOGY * LOW PHASE NOISE
3
NE71300
NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA
24
2.5
21
2 GA 1.5
18
15
1 NF 0.5
12
DESCRIPTION
The NE71300 features a low noise figure and high associated gain through K-band by employing a recessed 0.3 micron gate and triple epitaxial technology. The active area of the chip is covered with Si02 and Si3N4 for scratch protection as well as surface stability. This device is suitable for both amplifier and oscillator applications in the consumer and industrial markets. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance.
9
0 1 2 10 20 30
6
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS
(TA = 25C)
PART NUMBER
PACKAGE OUTLINE SYMBOLS NFOPT1 PARAMETERS AND CONDITIONS Optimum Noise Figure, VDS = 3 V, IDS = 10 mA, f = 4 GHz f = 12 GHz Associated Gain, VDS = 3 V, IDS = 10 mA, f = 4 GHz f = 12 GHz Output Power at 1 dB Compression, VDS = 3 V, IDs = 30 mA, f =12 GHz Saturated Drain Current, VDS = 3 V, VGS = 0 Pinch-Off Voltage, VDS = 3 V, IDS = 0.1 mA Transconductance, VDS = 3 V, IDS = 10 mA Gate to Source Leakage Current at VGS = -5 V Thermal Resistance (Channel to Case) UNITS dB dB dB dB dBm mA V mS A C/W 20 -3.5 20 11.5 8.5 MIN
NE71300
00 (CHIP) TYP 0.6 1.6 14.0 9.5 14.5 40 -1.1 50 1.0 10 190 120 -0.5 MAX 0.7 1.8
GA1
P1dB IDSS VP gm IGSO RTH (CH-C)2
Notes: 1. RF performance is determined by packaging and testing 10 samples per wafer; wafer rejection criteria for standard devices is 2 rejects for 10 samples. 2. Chip mounted on infinite heat sink.
California Eastern Laboratories
Associated Gain, GA (dB)
Noise Figure, NF (dB)
NE71300 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C)
SYMBOLS VDS VGD VGS IDS PIN TCH TSTG PT2 PARAMETERS Drain to Source Voltage Gate to Drain Voltage Gate to Source Voltage Drain Current RF Input (CW) Channel Temperature Storage Temperature Total Power Dissipation UNITS V V V mA dBm C C mW RATINGS 5 -6 -5 IDSS +15 175 -65 to +175 400
Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. With chip mounted on a copper heat sink.
TYPICAL PERFORMANCE CURVES (TA = 25 C)
POWER DERATING CURVE
400
Total Power Dissipation, PT (mW)
300
NE 713
200
00
100
0
50
100
150
200
Ambient Temperature, TA (C)
DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE
50
DC PERFORMANCE
VGS = 0 V
VDS = 3 V
Drain Current, IDS (mA)
Drain Current, IDS (mA)
40
40 -0.2 V 30
30
20
20
-0.4 V
10
10
-0.6 V
0
-2.0
-1.0
0
0
1
2
3
4
5
Gate to Source Voltage, VGS (V)
Drain Voltage, VDS (V)
NE71300 TYPICAL SCATTERING PARAMETERS1
.8 .6 .4 1
90
1.5 2
S11 26 GHz S22 26 GHz
135
3 4 5 10 20
45
.2
0
.2
.4
.6
.8
1
1.5
2
3
45
10 20
S22 0.5 GHz
-20 -10 -5 -4
S11 0.5 GHz
180
S21 0.5 GHz
S12 0.5 GHz 0.05 0.50 S21 26 GHz 1.00 1.50 S12 26 GHz 0.10 0.15
0
-.2 -3 -.4 -2 -.6 -.8 -1 -1.5
Coordinates in Ohms Frequency in GHz (VDS = 2 V, ID = 10 mA)
2.00
225
2.50 3.00
315
270
NE71300 VDS = 2 V, ID = 10 mA
FREQUENCY (GHz) 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 MAG 0.998 0.995 0.982 0.959 0.928 0.895 0.852 0.817 0.762 0.736 0.713 0.702 0.687 0.682 0.675 0.674 0.676 0.673 0.666 0.664 0.656 0.658 0.654 0.646 0.660 0.670 0.681 S11 ANG -7.5 -15.0 -29.9 -44.4 -58.8 -72.7 -86.5 -100.5 -113.5 -126.3 -139.6 -153.1 -166.7 -179.1 169.7 160.4 152.0 144.9 138.2 132.5 126.5 119.6 113.6 107.2 100.7 94.7 89.6 MAG 2.931 2.922 2.882 2.823 2.703 2.652 2.470 2.384 2.248 2.108 2.046 1.911 1.842 1.710 1.618 1.501 1.391 1.315 1.248 1.112 1.101 0.995 0.933 0.882 0.783 0.760 0.675 S21 ANG 172.9 165.9 152.1 138.0 124.6 111.2 97.9 86.2 73.2 63.8 51.1 40.7 29.2 17.8 8.2 -2.5 -10.4 -19.8 -31.4 -36.3 -45.1 -51.5 -63.7 -71.0 -77.6 -86.4 -91.4 MAG 0.013 0.026 0.052 0.075 0.097 0.113 0.128 0.141 0.141 0.147 0.155 0.159 0.156 0.142 0.139 0.138 0.145 0.149 0.161 0.174 0.160 0.137 0.097 0.099 0.098 0.111 0.130 S12 ANG 84.6 79.9 69.1 59.1 48.8 38.4 28.8 18.8 8.9 2.4 -4.9 -14.4 -24.5 -27.6 -31.9 -32.3 -37.8 -39.2 -42.3 -51.1 -65.9 -80.3 -76.0 -68.6 -60.6 -57.8 -57.9 MAG 0.602 0.600 0.593 0.581 0.563 0.541 0.506 0.472 0.426 0.396 0.368 0.342 0.317 0.298 0.295 0.300 0.309 0.326 0.340 0.359 0.369 0.371 0.369 0.373 0.385 0.411 0.446 S22 ANG -5.5 -10.8 -21.4 -31.6 -41.6 -51.6 -61.2 -71.0 -78.5 -87.2 -97.7 -109.8 -124.7 -139.0 -153.3 -165.9 -175.7 175.3 167.6 160.7 152.0 142.4 133.3 123.2 113.3 103.3 94.5 0.047 0.063 0.127 0.201 0.277 0.352 0.447 0.509 0.677 0.729 0.767 0.810 0.874 0.999 1.065 1.126 1.128 1.138 1.112 1.132 1.274 1.659 2.561 2.679 2.919 2.495 2.220 K MAG2 (dB) 23.531 20.507 17.437 15.756 14.451 13.705 12.855 12.281 12.026 11.566 11.206 10.799 10.722 10.807 9.101 8.207 7.642 7.198 6.860 5.846 5.230 3.865 2.913 2.369 1.496 1.561 0.919
Notes: 1. S-parameters include bond wires. Gate: Total 2 wire (s), 2 per bond pad, 0.0298" (756 m) long each wire. Drain: Total 739 wire(s), 2 per bond pad, 0.0291" (739 m) long each wire. Source:Total 4 wire (s), 2 per side, 0.0186" (472 m) long each wire. Wire: 0.0007" (17.8 m) Diameter, Gold. 2. Gain Calculations:
MAG = |S21| |S12|
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
NE71300 TYPICAL SCATTERING PARAMETERS1
.8 .6 .4
S11 26 GHz S22 26 GHz
1
90
1.5 2
135
3 4 5 10 20
45
.2
S21
S11 0.5 GHz
S12 0.5 GHz 0.05 S21 26 GHz 0.50 1.00 1.50 S12 26 GHz 0.10 0.15
0
.2
.4
.6
.8
1
1.5
2
3
45
10 20
180 0.5 GHz
0
S22 0.5 GHz
-20 -10 -5 -4
-.2 -3 -.4 -2 -.6 -.8 -1 -1.5
Coordinates in Ohms Frequency in GHz (VDS = 3 V, ID = 10 mA)
2.00
225
2.50 3.00
315
270
NE71300 VDS = 3 V, ID = 10 mA
FREQUENCY (GHz) 0.500 1.000 2.000 3.000 4.000 5.000 6.000 7.000 8.000 9.000 10.000 11.000 12.000 13.000 14.000 15.000 16.000 17.000 18.000 19.000 20.000 21.000 22.000 23.000 24.000 25.000 26.000 MAG 0.998 0.995 0.982 0.958 0.927 0.894 0.851 0.816 0.761 0.734 0.712 0.700 0.685 0.681 0.674 0.672 0.675 0.673 0.666 0.664 0.658 0.659 0.655 0.647 0.662 0.672 0.682 S11 ANG -7.5 -15.0 -29.8 -44.3 -58.7 -72.6 -86.4 -100.3 -113.3 -126.0 -139.3 -152.8 -166.4 -178.7 170.0 160.7 152.3 145.2 138.5 132.8 126.8 119.8 113.8 107.2 100.7 94.7 89.6 MAG 2.926 2.917 2.877 2.820 2.698 2.650 2.468 2.382 2.250 2.105 2.051 1.915 1.850 1.725 1.631 1.518 1.406 1.330 1.268 1.124 1.114 1.004 0.945 0.890 0.787 0.764 0.676 S21 ANG 172.9 165.9 152.1 138.0 124.6 111.2 97.8 86.1 73.2 63.7 51.1 40.6 29.2 17.7 8.0 -2.7 -10.8 -20.3 -31.9 -37.3 -46.0 -52.7 -65.1 -72.3 -79.3 -88.1 -93.4 MAG 0.013 0.025 0.050 0.071 0.092 0.108 0.121 0.134 0.134 0.138 0.146 0.150 0.147 0.134 0.131 0.130 0.136 0.140 0.152 0.164 0.153 0.131 0.094 0.095 0.095 0.109 0.127 S12 ANG 84.4 79.6 69.2 59.1 49.0 38.6 29.0 19.1 9.1 2.7 -4.4 -13.4 -23.4 -26.4 -30.6 -30.9 -36.1 -37.1 -40.0 -48.4 -62.9 -77.1 -73.3 -65.6 -57.4 -54.5 -54.8 MAG 0.637 0.635 0.628 0.616 0.598 0.576 0.541 0.507 0.463 0.434 0.406 0.378 0.350 0.329 0.321 0.321 0.329 0.344 0.360 0.379 0.388 0.389 0.386 0.387 0.398 0.420 0.454 S22 ANG -5.2 -10.3 -20.5 -30.1 -39.7 -49.2 -58.3 -67.5 -74.5 -82.6 -92.3 -103.5 -117.1 -130.2 -143.7 -156.0 -166.1 -175.4 176.2 168.5 159.5 149.4 140.2 129.8 119.5 109.0 99.4 0.050 0.068 0.130 0.212 0.287 0.363 0.464 0.527 0.698 0.762 0.796 0.843 0.913 1.037 1.110 1.176 1.179 1.182 1.138 1.167 1.290 1.692 2.566 2.724 2.936 2.479 2.231 K MAG2 (dB) 23.523 20.670 17.600 15.990 14.673 13.898 13.096 12.498 12.251 11.834 11.476 11.061 10.999 9.915 8.932 8.135 7.584 7.193 6.953 5.886 5.392 3.993 3.095 2.509 1.626 1.691 1.004
Notes: 1. S-parameters include bond wires. Gate: Total 2 wire (s), 2 per bond pad, 0.0298" (756 m) long each wire. Drain: Total 739 wire(s), 2 per bond pad, 0.0291" (739 m) long each wire. Source:Total 4 wire (s), 2 per side, 0.0186" (472 m) long each wire. Wire: 0.0007" (17.8 m) Diameter, Gold. 2. Gain Calculations:
MAG = |S21| |S12|
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
NE71300 TYPICAL SCATTERING PARAMETERS1
.8 .6 .4
S11 26 GHz S22 26 GHz
1
90
1.5 2
135
3 4 5 10 20
45
.2
0
.2
.4
.6
.8
1
1.5
2
3
45 S22 0.5 GHz
10 20
-20 -10 -5 -4 -3
S11 0.5 GHz
180
S21 0.5 GHz
S12 0.5 GHz 0.05 S21 26 GHz 1.00 S12 26 GHz 2.00 0.10 0.15
0
-.2
-.4 -2 -.6 -.8 -1 -1.5
Coordinates in Ohms Frequency in GHz (VDS = 3 V, ID = 30 mA)
225
3.00
315
270
NE71300 VDS = 3 V, ID = 30 mA
FREQUENCY (GHz) 0.500 1.000 2.000 3.000 4.000 5.000 6.000 7.000 8.000 9.000 10.000 11.000 12.000 13.000 14.000 15.000 16.000 17.000 18.000 19.000 20.000 21.000 22.000 23.000 24.000 25.000 26.000 MAG 0.998 0.993 0.976 0.946 0.909 0.870 0.821 0.783 0.725 0.702 0.687 0.685 0.680 0.683 0.679 0.677 0.675 0.670 0.662 0.658 0.655 0.663 0.661 0.658 0.675 0.686 0.698 S11 ANG -8.3 -16.5 -32.7 -48.2 -63.3 -77.7 -92.2 -106.9 -120.4 -133.6 -146.9 -159.8 -172.3 176.7 166.5 157.8 149.5 142.1 134.9 128.7 122.2 115.2 109.6 104.2 99.0 94.4 90.5 MAG 3.738 3.718 3.640 3.527 3.341 3.236 2.984 2.845 2.646 2.449 2.354 2.179 2.085 1.935 1.829 1.701 1.582 1.497 1.423 1.259 1.245 1.117 1.045 0.982 0.873 0.847 0.756 S21 ANG 172.5 165.1 150.6 136.0 122.4 108.9 95.6 83.8 71.1 61.8 49.7 39.7 28.9 18.0 8.8 -1.5 -9.4 -18.7 -30.3 -35.4 -44.0 -50.3 -62.5 -69.4 -76.3 -85.0 -90.2 MAG 0.011 0.021 0.042 0.060 0.077 0.089 0.100 0.109 0.107 0.109 0.116 0.119 0.117 0.109 0.109 0.111 0.118 0.125 0.143 0.159 0.149 0.127 0.095 0.097 0.100 0.116 0.136 S12 ANG 84.3 79.7 68.8 59.1 49.1 39.1 30.1 20.5 11.5 7.0 1.5 -6.1 -14.8 -15.5 -18.8 -18.0 -22.5 -22.5 -25.0 -35.1 -50.8 -65.2 -60.3 -53.5 -46.2 -44.4 -45.0 MAG 0.574 0.571 0.562 0.548 0.529 0.507 0.475 0.443 0.401 0.376 0.352 0.325 0.294 0.272 0.264 0.270 0.285 0.310 0.334 0.358 0.373 0.373 0.363 0.355 0.359 0.381 0.418 S22 ANG -5.3 -10.6 -21.0 -30.8 -40.6 -50.4 -59.5 -68.6 -74.3 -80.9 -89.4 -99.7 -113.5 -128.3 -143.9 -158.7 -169.7 -179.3 173.5 167.2 159.0 149.9 141.1 130.3 118.5 106.1 95.0 0.049 0.080 0.153 0.242 0.327 0.411 0.522 0.597 0.808 0.888 0.911 0.958 1.029 1.147 1.206 1.251 1.245 1.217 1.107 1.101 1.183 1.540 2.279 2.416 2.532 2.126 1.884 K MAG2 (dB) 25.312 22.481 19.379 17.693 16.374 15.606 14.748 14.167 13.932 13.516 13.073 12.627 11.467 10.163 9.505 8.838 8.294 7.969 7.983 7.052 6.633 5.111 4.053 3.412 2.546 2.611 2.034
Notes: 1. S-parameters include bond wires. Gate: Total 2 wire (s), 2 per bond pad, 0.0298" (756 m) long each wire. Drain: Total 739 wire(s), 2 per bond pad, 0.0291" (739 m) long each wire. Source:Total 4 wire (s), 2 per side, 0.0186" (472 m) long each wire. Wire: 0.0007" (17.8 m) Diameter, Gold. 2. Gain Calculations:
MAG = |S21| |S12|
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
NE71300 TYPICAL SCATTERING PARAMETERS1
NE71300 VDS = 4 V, ID = 10 mA
FREQUENCY (GHz) 0.500 1.000 2.000 3.000 4.000 5.000 6.000 7.000 8.000 9.000 10.000 11.000 12.000 13.000 14.000 15.000 16.000 17.000 18.000 19.000 20.000 21.000 22.000 23.000 24.000 25.000 26.000 MAG 0.998 0.994 0.981 0.958 0.927 0.894 0.851 0.816 0.761 0.735 0.711 0.700 0.685 0.681 0.674 0.672 0.675 0.673 0.666 0.665 0.659 0.661 0.657 0.649 0.664 0.673 0.684 S11 ANG -7.5 -14.9 -29.7 -44.1 -58.4 -72.2 -86.0 -99.9 -112.9 -125.6 -138.9 -152.3 -165.9 -178.2 170.5 161.2 152.7 145.5 138.8 133.1 127.0 120.0 114.1 107.4 100.9 94.8 89.6 MAG 2.874 2.866 2.828 2.774 2.654 2.610 2.432 2.348 2.223 2.078 2.030 1.895 1.834 1.716 1.621 1.512 1.402 1.328 1.269 1.120 1.111 0.999 0.943 0.886 0.782 0.760 0.669 S21 ANG 172.9 165.9 152.1 138.0 124.6 111.3 97.8 86.1 73.2 63.6 51.1 40.4 29.1 17.5 7.8 -3.0 -11.3 -20.8 -32.5 -38.2 -46.8 -53.7 -66.3 -73.6 -80.9 -89.7 -95.0 MAG 0.012 0.024 0.048 0.069 0.089 0.105 0.118 0.130 0.130 0.133 0.141 0.144 0.141 0.129 0.126 0.126 0.131 0.134 0.146 0.158 0.148 0.128 0.093 0.093 0.093 0.108 0.126 S12 ANG 83.7 79.5 69.4 59.1 49.2 38.8 29.1 19.4 9.2 2.9 -3.9 -12.9 -22.7 -25.5 -29.6 -29.8 -35.3 -35.7 -38.3 -46.6 -61.0 -75.2 -70.9 -63.5 -55.0 -52.3 -52.5 MAG 0.658 0.656 0.649 0.637 0.620 0.598 0.564 0.531 0.488 0.460 0.433 0.405 0.376 0.353 0.342 0.341 0.348 0.362 0.379 0.397 0.406 0.405 0.402 0.402 0.410 0.432 0.464 S22 ANG -5.0 -10.0 -19.8 -29.2 -38.4 -47.7 -56.4 -65.3 -72.0 -79.8 -89.1 -99.7 -112.6 -124.9 -138.1 -150.0 -160.0 -169.7 -178.5 173.5 164.1 153.9 144.6 133.9 123.5 112.6 102.8 0.060 0.081 0.137 0.219 0.295 0.372 0.477 0.540 0.717 0.783 0.817 0.871 0.944 1.069 1.147 1.202 1.213 1.219 1.162 1.191 1.311 1.708 2.547 2.738 2.962 2.466 2.221 K MAG2 (dB) 23.793 20.771 17.702 16.043 14.745 13.955 13.141 12.568 12.330 11.938 11.583 11.192 11.142 9.635 8.767 8.073 7.511 7.138 6.948 5.864 5.414 4.020 3.168 2.557 1.651 1.735 1.014
Notes: 1. S-parameters include bond wires. Gate: Total 2 wire (s), 2 per bond pad, 0.0298" (756 m) long each wire. Drain: Total 739 wire(s), 2 per bond pad, 0.0291" (739 m) long each wire. Source:Total 4 wire (s), 2 per side, 0.0186" (472 m) long each wire. Wire: 0.0007" (17.8 m) Diameter, Gold. 2. Gain Calculations:
MAG = |S21| |S12|
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
OUTLINE DIMENSIONS (Units in m)
NE71300 (CHIP) (Units in m)
450
ORDERING INFORMATION
PART NUMBER NE71300 NE71300N NE71300M NE71300L IDSS SELECTION (mA) 20 to 120 (Standard) 20 to 50 80 to 120
122
123
64
76
60
50 to 80
DRAIN
DRAIN
52 54 40
SOURCE
67
GATE SOURCE
GATE
70
120
70
56 18
48
44
52
Note: All dimensions are typical unless otherwise stated.
118
400
NE71300 NE71300(L) NONLINEAR MODEL SCHEMATIC
LD DRAIN Q1 LG GATE 0.36nH 0.36nH
LS 0.01nH
SOURCE
FET NONLINEAR MODEL PARAMETERS (1)
Parameters VTO VTOSC ALPHA BETA GAMMA GAMMADC Q DELTA VBI IS N RIS RID TAU CDS RDB CBS CGSO CGDO DELTA1 DELTA2 FC VBR Q1 -2.04 0 2.5 0.03145 0.115 0.06 1.7 0.42 1 7.3e-12 1.2 0 0 6e-12 0.15e-12 2000 1e-9 0.55e-12 0.04e-12 0.3 0.2 0.5 Infinity Parameters RG RD RS RGMET KF AF TNOM XTI EG VTOTC BETATCE FFE Q1 6 2 2 0 0 1 27 3 1.43 0 0 1
UNITS
Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps
MODEL RANGE Frequency: 0.5 to 20 GHz Bias: VDS = 2 V to 4 V, ID = 10 mA to 30 mA Date: 2/10/97
(1) Series IV Libra TOM Model
NE71300 NE71300(N) NONLINEAR MODEL SCHEMATIC
LD DRAIN Q1 LG GATE 0.36nH 0.36nH
LS 0.02nH
SOURCE
FET NONLINEAR MODEL PARAMETERS (1)
Parameters VTO VTOSC ALPHA BETA GAMMA GAMMADC Q DELTA VBI IS N RIS RID TAU CDS RDB CBS CGSO CGDO DELTA1 DELTA2 FC VBR Q1 -1.04 0 4.5 0.0409 0.082 0.05 1.9 0.42 1 7.3e-12 1.2 0 0 6e-12 0.15e-12 2000 1e-9 0.5e-12 0.04e-12 0.3 0.2 0.5 Infinity Parameters RG RD RS RGMET KF AF TNOM XTI EG VTOTC BETATCE FFE Q1 6 2 2 0 0 1 27 3 1.43 0 0 1
UNITS
Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps
MODEL RANGE Frequency: 0.5 to 20 GHz Bias: VDS = 2 V to 4 V, ID = 10 mA to 30 mA Date: 2/10/97
(1) Series IV Libra TOM Model
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -9/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE

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