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| NPN Silicon High Voltage Transistors SXTA 42 SXTA 43 High breakdown voltage q Low collector-emitter saturation voltage q Type SXTA 42 SXTA 43 Marking 1D 1E Ordering Code (tape and reel) Q68000-A8394 Q68000-A8650 Pin Configuration 1 2 3 B C E Package1) SOT-89 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 130 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS Symbol SXTA 42 VCE0 VCB0 VEB0 IC Ptot Tj Tstg 300 300 Values SXTA 43 200 200 6 500 1 150 Unit V mA W C - 65 ... + 150 75 20 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SXTA 42 SXTA 43 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 mA SXTA 42 SXTA 43 Collector-base breakdown voltage IC = 100 A SXTA 42 SXTA 43 Emitter-base breakdown voltage IE = 100 A Collector cutoff current VCB = 200 V, IE = 0 VCB = 160 V, IE = 0 VCB = 200 V, IE = 0, TA = 125 C VCB = 160 V, IE = 0, TA = 125 C Emitter-base cutoff current VEB = 6 V, IC = 0 DC current gain IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V SXTA 42 SXTA 43 SXTA 42 SXTA 43 IEB0 hFE 25 40 40 40 VCEsat - - VBEsat - - - - 0.5 0.4 0.9 - - - - - - - - V V(BR)CE0 300 200 V(BR)CB0 300 200 V(BR)EB0 ICB0 - - - - - - - - - - 100 100 10 10 100 nA nA A A Values typ. max. Unit V - - - - - - - - - - 6 nA - SXTA 42 SXTA 43 Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA SXTA 42 SXTA 43 Base-emitter saturation voltage1) IC = 20 mA, IB = 2 mA AC characteristics Transition frequency IC = 10 mA, VCE = 20 V, f = 100 MHz Output capacitance VCB = 20 V, f = 1 MHz SXTA 42 SXTA 43 fT Cobo 50 - - MHz pF - - - - 3 4 1) Pulse test conditions: t 300 s, D 2 %. Semiconductor Group 2 SXTA 42 SXTA 43 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Transition frequency fT = f (IC) VCE = 10 V, f = 100 MHz Permissible pulse load Ptot max/Ptot DC = f (tp) Operating range IC = f (VCE0) TA = 25 C, D = 0 Semiconductor Group 3 SXTA 42 SXTA 43 Collector cutoff current ICB0 = f (TA) VCB = 160 V Collector current IC = f (VBE) VCE = 10 V DC current gain hFE = f (IC) VCE = 10 V Semiconductor Group 4 |
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