![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
VISHAY TLC.52.. Vishay Semiconductors High Intensity LED, 5 mm 30 Untinted Non-Diffused \ 94 8631 Description The TLC.52.. series is a clear, non diffused 5 mm LED for high end applications where supreme luminous intensity required. These lamps with clear untinted plastic case utilize the highly developed ultrabright AlInGaP and InGaN technologies. The lens and the viewing angle is optimized to achieve best performance of light output and visibility. Features * Untinted non diffused lens * Utilizing ultrabright AllnGaP and InGaN technology * High luminous intensity * High operating temperature: Tj (chip junction temperature) up to 125 C for AllnGaP devices * Luminous intensity and color categorized for each packing unit * ESD-withstand voltage: 2 kV acc. to MIL STD 883 D, Method 3015.7 for AllnGaP, 1 kV for InGaN Applications Interior and exterior lighting Outdoor LED panels Instrumentation and front panel indicators Central high mounted stop lights (CHMSL) for motor vehicles Replaces incandescent lamps Traffic signals Light guide design Parts Table Part TLCR5200 TLCY5200 TLCTG5200 TLCB5200 Color, Luminous Intensity Red, IV > 1350 mcd Yellow, IV > 1350 mcd True green, IV > 750 mcd Blue, IV > 240 mcd 15 15 15 15 Angle of Half Intensity () Technology AllnGaP on GaAs AllnGaP on GaAs InGaN on SiC InGaN on SiC Document Number 83210 Rev. 5, 08-Apr-03 www.vishay.com 1 TLC.52.. Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified TLCR5200 , TLCY5200 Parameter Reverse voltage DC forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ ambient TLCTG5200 , TLCB5200 Parameter Reverse voltage DC forward current Surge forward current Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ ambient t 5 s, 2 mm from body Tamb 60 C tp 10 s Tamb 60C Test condition Symbol VR IF IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 30 0.1 135 100 - 40 to + 100 - 40 to + 100 260 300 t 5 s, 2 mm from body Tamb 85 C tp 10 s Tamb 85 C Test condition Symbol VR IF IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 50 1 135 125 - 40 to + 100 - 40 to + 100 260 300 VISHAY Unit V mA A mW C C C C K/W Unit V mA A mW C C C C K/W Optical and Electrical Characteristics Tamb = 25 C, unless otherwise specified Red TLCR5200 Parameter Luminous intensity Peak wavelength Spectral bandwidth at 50 % Irel max Angle of half intensity Forward voltage Reverse voltage Temperature coefficient of VF Temperature coefficient of d 1) 1) Test condition IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IR = 10 A IF = 50 mA IF = 50 mA Part TLCR5200 Symbol IV d p VF VR TC VF TCd Min 1350 611 Typ. 4000 616 622 18 15 2.1 Max 622 Unit mcd nm nm nm deg Dominant wavelength 2.7 V V mV/K nm/K 5 - 3.5 0.05 in one Packing Unit IVMax./IVMin. 2.0 www.vishay.com 2 Document Number 83210 Rev. 5, 08-Apr-03 VISHAY Yellow TLCY5200 Parameter Luminous intensity Peak wavelength Spectral bandwidth at 50 % Irel max Angle of half intensity Forward voltage Reverse voltage Temperature coefficient of VF Temperature coefficient of d 1) 1) TLC.52.. Vishay Semiconductors Test condition IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IF = 50 mA IR = 10 A IF = 50 mA IF = 50 mA Part TLCY5200 Symbol IV d p VF VR TC VF TCd Min 1350 585 Typ. 4000 590 593 17 15 2.1 Max 597 Unit mcd nm nm nm deg Dominant wavelength 2.7 V V mV/K nm/K 5 - 3.5 0.1 in one Packing Unit IVMax./IVMin. 2.0 True green TLCTG5200 Parameter Luminous intensity Peak wavelength Spectral bandwidth at 50 % Irel max Angle of half intensity Forward voltage Reverse voltage Temperature coefficient of VF Temperature coefficient of d 1) 1) Test condition IF = 30 mA IF = 30 mA IF = 30 mA IF = 30 mA IF = 30 mA IF = 30 mA IR = 10 A IF = 30 mA IF = 30 mA Part TLCTG5200 Symbol IV d p VF VR TC VF TCd Min 750 515 Typ. 2000 525 520 37 15 3.9 Max 535 Unit mcd nm nm nm deg Dominant wavelength 4.5 V V mV/K nm/K 5 - 4.5 0.02 in one Packing Unit IVMax./IVMin. 2.0 Optical and Electrical Characteristics Tamb = 25 C, unless otherwise specified Blue TLCB5200 Parameter Luminous intensity Peak wavelength Spectral bandwidth at 50 % Irel max Angle of half intensity Forward voltage Reverse voltage Temperature coefficient of VF Temperature coefficient of d 1) 1) Test condition IF = 30 mA IF = 30 mA IF = 30 mA IF = 50 mA IF = 30 mA IF = 30 mA IR = 10 A IF = 30 mA IF = 30 mA Part TLCB5200 Symbol IV d p VF VR TC VF TCd Min 240 462 Typ. 700 470 464 25 15 3.9 Max 476 Unit mcd nm nm nm deg Dominant wavelength 4.5 V V mV/K nm/K 5 - 5.0 0.02 in one Packing Unit IVMax./IVMin. 2.0 Document Number 83210 Rev. 5, 08-Apr-03 www.vishay.com 3 TLC.52.. Vishay Semiconductors Typical Characteristics (Tamb = 25 C unless otherwise specified) 160 PV -Power Dissipation (mW) I F-Forward Current ( mA ) VISHAY 60 50 40 30 20 10 0 0 20 40 60 80 100 120 16711 140 120 100 80 60 40 20 0 Yellow Red Blue Truegreen 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C ) 16708 Tamb - Ambient Temperature ( C ) Figure 1. Power Dissipation vs. Ambient Temperature Figure 4. Forward Current vs. Ambient Temperature 160 PV -Power Dissipation (mW) 0 I v rel - Relative Luminous Intensity 10 20 30 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C ) Blue Truegreen 40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6 16709 17534 Figure 2. Power Dissipation vs. Ambient Temperature Figure 5. Rel. Luminous Intensity vs. Angular Displacement 60 I F-Forward Current ( mA ) 100 90 I F - Forward Current ( mA ) 50 40 30 20 10 0 0 20 40 60 80 100 120 Yellow Red 80 70 60 50 40 30 20 10 Red Yellow 16710 Tamb - Ambient Temperature ( C ) 15974 0 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 V F - Forward Voltage ( V ) Figure 3. Forward Current vs. Ambient Temperature Figure 6. Forward Current vs. Forward Voltage www.vishay.com 4 Document Number 83210 Rev. 5, 08-Apr-03 VISHAY TLC.52.. Vishay Semiconductors 100 90 I F - Forward Current ( mA ) I Vrel- Relative Luminous Intensity 10.00 True Green 1.00 80 70 60 50 40 30 20 10 0 2.5 Blue Truegreen 0.10 3.0 3.5 4.0 4.5 5.0 5.5 16039 0.01 1 10 IF - Forward Current ( mA ) 100 16040 VF - Forward Voltage ( V ) Figure 7. Forward Current vs. Forward Voltage Figure 10. Relative Luminous Flux vs. Forward Current 10.00 I Vrel- Relative Luminous Intensity 10.00 Red I Vrel- Relative Luminous Intensity Blue 1.00 1.00 0.10 0.10 0.01 1 15978 10 IF - Forward Current ( mA ) 100 16042 0.01 1 10 IF - Forward Current ( mA ) 100 Figure 8. Relative Luminous Flux vs. Forward Current Figure 11. Relative Luminous Flux vs. Forward Current 10.00 IV rel - Relative Luminous Intensity Yellow 1.00 0.10 0.01 1 15979 10 IF - Forward Current ( mA ) 100 16007 1.2 Red IF = 50 mA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 570 580 590 600 610 620 630 640 650 660 670 l - Wavelength ( nm ) I Vrel- Relative Luminous Intensity Figure 9. Relative Luminous Flux vs. Forward Current Figure 12. Relative Intensity vs. Wavelength Document Number 83210 Rev. 5, 08-Apr-03 www.vishay.com 5 TLC.52.. Vishay Semiconductors VISHAY 1.2 Yellow IF = 50 mA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 540 550 560 570 580 590 600 610 620 630 640 l - Wavelength ( nm ) 16008 I Vrel- Relative Luminous Intensity Figure 13. Relative Intensity vs. Wavelength 16068 1.2 True Green IF = 30 mA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 460 480 500 520 540 560 580 600 620 l - Wavelength ( nm ) IVrel- Relative Luminous Intensity Figure 14. Relative Intensity vs. Wavelength 17539 1.2 Blue IF = 30 mA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 400 420 440 460 480 500 520 540 560 l - Wavelength ( nm ) I rel - Relative Intensity Figure 15. Relative Intensity vs. Wavelength www.vishay.com 6 Document Number 83210 Rev. 5, 08-Apr-03 VISHAY Package Dimensions in mm TLC.52.. Vishay Semiconductors 14339 Document Number 83210 Rev. 5, 08-Apr-03 www.vishay.com 7 TLC.52.. Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. VISHAY 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 8 Document Number 83210 Rev. 5, 08-Apr-03 |
Price & Availability of TLCTG5200
![]() |
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |