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| (R) BYW77P/PI-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION : Insulating voltage = 2500 V DC Capacitance = 12 pF A K DESCRIPTION Single chip rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in SOD93, or DOP3I this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. SOD93 (Plastic) BYW77P-200 isolated DOP3I (Plastic) BYW77PI-200 ABSOLUTE MAXIMUM RATINGS Symbol IF(RMS) IF(AV) RMS forward current Average forward current = 0.5 SOD93 TOP3I Tc=125C Tc=100C tp=10ms sinusoidal Parameter Value 50 25 25 500 - 40 to + 150 - 40 to + 150 Unit A A IFSM Tstg Tj Surge non repetitive forward current Storage and junction temperature range A C C Symbol VRRM Parameter Repetitive peak reverse voltage Value 200 Unit V October 1999 Ed : 2C 1/5 BYW77P/PI-200 THERMAL RESISTANCE Symbol Rth (j-c) Junction to case Parameter SOD93 DOP3I Value 1.0 1.8 Unit C/W ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol IR * Tj = 25C Tj = 100C VF ** Tj = 125C Tj = 125C Tj = 25C IF = 20 A IF = 40 A IF = 40 A Test Conditions VR = VRRM Min. Typ. Max. 25 2.5 0.85 1.00 1.15 Unit A mA V Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 s, duty cycle < 2 % To evaluate the conduction losses use the following equation : P = 0.7 x IF(AV) + 0.0075 x IF2(RMS) RECOVERY CHARACTERISTICS Symbol trr Tj = 25C Test Conditions IF = 0.5A IR = 1A IF = 1A VR = 30V tfr VFP Tj = 25C Tj = 25C IF = 1A VFR = 1.1 x VF IF = 1A Irr = 0.25A dIF/dt = -50A/s tr = 5 ns tr = 5 ns 10 1.5 Min. Typ. Max. 35 50 ns V Unit ns 2/5 BYW77P/PI-200 Fig.1 : Average forward power dissipation versus average forward current. P F(av)(W) =0.1 =0.05 =0.2 =0.5 =1 Fig.2 : Peak current versus form factor. I M(A) 30.0 27.5 25.0 22.5 20.0 17.5 15.0 12.5 10.0 7.5 5.0 2.5 0.0 0 500 T 400 P=20W I M 300 200 P=30W =tp/T tp T 100 P=40W I F(av)(A) 5 10 15 20 =tp/T tp 25 30 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Fig.3 : Forward voltage drop versus forward current (maximum values). VFM(V) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 Tj=125 oC Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration. 1.0 K Zth(j-c) (tp. K= Rth(j-c) =0.5 =0.2 =0.1 ) 0.5 T 0.2 IFM(A) 1 10 100 300 Single pulse 0.1 0.1 1.0E-03 1.0E-02 tp(s) 1.0E-01 =tp/T tp 1.0E+00 Fig.5 : Non repetitive surge peak forward current versus overload duration. (BYW81P) 300 250 200 Tc=25 oC Fig.6 : Non repetitive surge peak forward current versus overload duration. (BYW81PI) 250 200 150 Tc=25 oC IM(A) IM(A) 150 Tc=75 o C 100 IM Tc=50 o C 100 IM Tc=125 o C 50 0 0.001 t =0.5 50 0 0.001 t(s) 0.01 0.1 1 t =0.5 t(s) 0.01 0.1 Tc=100 o C 1 3/5 BYW77P/PI-200 Fig.7 : Average current temperature. (duty cycle : 0.5) (SOD93) I F(av)(A) 30 Rth(j-a)=Rth(j-c) versus ambient Fig.8 : Average current temperature. (duty cycle : 0.5) (DOP3I) 30 25 versus ambient I F(av)(A) Rth(j-a)=Rth(j-c) 25 =0.5 20 15 =tp/T T =0.5 20 15 tp T 10 5 0 0 Rth(j-a)=15 o C/W 10 Rth(j-a)=15 o C/W =tp/T tp 5 Tamb( o C) 20 40 60 80 100 120 140 160 Tamb( o C) 0 0 20 40 60 80 100 120 140 160 Fig.9 : Junction capacitance versus reverse voltage applied (Typical values). C(pF) F=1Mhz Tj=25 oC Fig.10 : Recovery charges versus dIF/dt. 20 0 1 90 1 80 1 70 1 60 1 50 1 40 1 30 1 20 11 0 80 70 60 50 40 30 20 QRR(nC) 90%CONFIDENCE IF=IF(av) Tj=100 OC Tj=25 O C VR(V) 10 1 00 200 10 0 1 dIF/dt(A/us) 10 1 00 1 00 1 Fig.11 : Peak reverse current versus dIF/dt. Fig.12 : Dynamic parameters versus junction temperature. 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1 IRM(A) 90%CONFIDENCE QRR;IRM[Tj]/QRR;IRM[Tj=125 oC] 1.50 1.25 Tj=100 OC IF=IF(av) 1.00 IRM 0.75 QRR 0.50 Tj=25 O C 0.25 0.00 0 25 dIF/dt(A/us) 20 10 1 00 Tj( oC) 50 75 100 125 150 4/5 BYW77P/PI-200 PACKAGE MECHANICAL DATA DOP3I (isoluted) DIMENSIONS REF. A B C D E F G H K L N P R Millimeters Min. Max. 4.4 4.6 1.45 1.55 14.35 15.60 0.5 0.7 2.7 2.9 15.8 16.5 20.4 21.1 15.1 15.5 3.4 3.65 4.08 4.17 10.8 11.3 1.20 1.40 4.60 typ. Inches Min. Max. 0.173 0.181 0.057 0.061 0.565 0.614 0.020 0.028 0.106 0.114 0.622 0.650 0.815 0.831 0.594 0.610 0.134 0.144 0.161 0.164 0.425 0.444 0.047 0.055 0.181 typ. Cooling method : C Marking : Type number Weight : 4.52 g Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N 5/5 BYW77P/PI-200 PACKAGE MECHANICAL DATA SOD93 DIMENSIONS REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 4.70 4.90 0.185 0.193 C 1.17 1.37 0.046 0.054 D 2.50 0.098 D1 1.27 0.050 E 0.50 0.78 0.020 0.031 F 1.10 1.30 0.043 0.051 F3 1.75 0.069 G 10.80 11.10 0.425 0.437 H 14.70 15.20 0.578 0.598 L 12.20 0.480 L2 16.20 0.638 L3 18.0 0.709 L5 3.95 4.15 0.156 0.163 L6 31.00 1.220 O 4.00 4.10 0.157 0.161 Cooling method : C Marking : Type number Weight : 3.79 g Recommended torque value : 0.8m.N Maximum torque value : 1.0m.N Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 6/5 |
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