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| Datasheet File OCR Text: |
| PROCESS Power Transistor CP268 Central TM NPN - High Voltage Transistor Chip Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Base Bonding Pad Area Emitter Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 2,840 PRINCIPAL DEVICE TYPES BUY49S BSW68 EPITAXIAL PLANAR 63 x 63 MILS 10 MILS 9 x 12 MILS 10 x 18 MILS Al - 16,000A Au - 12,000A BACKSIDE COLLECTOR 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (1-August 2002) Central TM PROCESS CP268 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (1-August 2002) |
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