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| TO-220 Plastic Package 2N6486, 2N6487, 2N6488 2N6489, 2N6490, 2N6491 2N6486, 6487, 6488 2N6489, 6490, 6491 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 4 Boca Semiconductor Corp. BSC B H F C E 1 2 3 DIM A B C D E F G H J K L M N O MIN . 14.42 9.63 3.56 MAX. N L O 12 3 D G J M 16.51 10.67 4.83 0.90 1.15 1.40 3.75 3.88 2.29 2.79 2.54 3.43 0.56 12.70 14.73 2.80 4.07 2.03 2.92 31.24 DEG 7 A O ABSOLUTE MAXIMUM RATINGS 6486 6487 6488 6489 6490 6491 max. 50 70 90 max. 40 60 80 max. 15 max. 75 max. 150 max. min. max. 1.3 20 150 All dimin sions in mm. K Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25C Junction temperature Collector-emitter saturation voltage IC = 5 A; IB = 0.5 A D.C. current gain IC = 5 A; VCE = 4 V VCBO VCEO IC Ptot Tj VCEsat hFE V V A W C V RATINGS (at TA=25C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) VCBO VCEO VEBO 6486 6487 6488 6489 6490 6491 max. 50 70 90 max. 40 60 80 max. 5.0 V V V http://www.bocasemi.com page: 1 2N6486, 2N6487, 2N6488 2N6489, 2N6490, 2N6491 Collector current Base current Total power dissipation up to TC = 25C Derate above 25C Total power dissipation up to TA = 25C Derate above 25C Junction temperature Storage temperature THERMAL RESISTANCE From junction to ambient From junction to case CHARACTERISTICS Tamb = 25C unless otherwise specified Collector cutoff current IB = 0; VCE = 20 V IB = 0; VCE = 30 V IB = 0; VCE = 40 V VEB(off) = 1.5 V; VCE = 45 V VEB(off) = 1.5 V; VCE = 65 V VEB(off) = 1.5 V; VCE = 85 V VEB(off) = 1.5 V; VCE = 40 V; VEB(off) = 1.5 V; VCE = 60 V; VEB(off) = 1.5 V; VCE = 80 V; Emitter cut-off current IC = 0; VEB = 5 V Breakdown voltages IC = 200 mA; IB = 0 IC = 1 mA; IE = 0 IC = 200 mA; VBE = 1.5 V IE = 1 mA; IC = 0 Saturation voltages IC = 5 A; IB = 0.5 A IC = 15 A; IB = 5 A Base-emitter on voltage IC = 5 A; VCE = 4 V IC = 15 A; VCE = 4 V D.C. current gain IC = 5 A; VCE = 4 V IC IB P tot P tot Tj T stg R th j-a R th j-c max. max. max. max. max. max. max. 15 5.0 75 0.6 1.8 0.014 150 -65 to +150 70 1.67 A A W W /C W W /C C C C W / C W / 6486 6487 6488 6489 6490 6491 max. 1.0 max. - max. - max. 500 max. - max. - max. 5.0 max. - max. - max. min. 40 min. 50 min. 50 min. max. max. max. max. min. max. min. min. min. - 1.0 - - 500 - - 5.0 - 1.0 60 70 70 5.0 1.3 3.5 1.3 3.5 20 150 5.0 5.0 25 MHz 80 90 90 - - 1.0 - - 500 - - 5.0 mA mA mA A A A mA mA mA mA V V V V V V V V ICEO ICEO ICEO ICEX ICEX ICEX TC=150C ICEX TC=150C ICEX TC=150C ICEX IEBO VCEO(sus)* VCBO VCEX(sus)* VEBO VCEsat* VCEsat* VBE(on)* VBE(on)* hFE* hFE* fT(1) hfe IC = 15 A; VCE = 4 V Transition frequency IC = 1 A; VCE = 4 V; f = 1 MHz Small signal current gain IC = 1.0A; VCE = 4V; f = 1.0 KHz * Pulse test: pulse width 300 s; duty cycle 2% (1) fT = |hfe|* ftest http://www.bocasemi.com page: 2 |
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