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| NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 MARCH 94 FEATURES * 80 Volt VCEO * Gain of 100 at IC = 350 mA * Ptot=1 Watt 2N6731 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb = 25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg E-Line TO92 Compatible VALUE 100 80 5 2 1 1 -55 to +200 UNIT V V V A A W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. 100 80 5 0.1 10 0.35 1.0 100 100 50 TYP. MAX. UNIT V V V A A CONDITIONS. IC=100A, IE=0 IC=10mA, IB=0* IE=1mA, IC=0 VCB=80V, IE=0 VEB=5V, IC=0 IC=350mA, IB=35mA* IC=350mA, VCE=2V* IC=10mA, VCE=2V* IC=350mA, VCE=2V* Emitter Cut-Off Current IEBO VCE(sat) VBE(on) V V Static Forward Current hFE Transfer Ratio Transition Frequency Collector-Base Capacitance fT CCB 300 500 20 MHz pF IC=200mA, VCE=5V f=20MHz VCB=10V, f=1MHz *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-10 |
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