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SRAM
Austin Semiconductor, Inc. 128K x 32 SRAM
SRAM MEMORY ARRAY
AVAILABLE AS MILITARY SPECIFICATIONS
* SMD 5962-95595: -Q * SMD 5962-93187: -P or -PN * MIL-STD-883
AS8S128K32
PIN ASSIGNMENT
(Top View)
68 Lead CQFP (Q)
FEATURES
* Access times of 15, 17, 20, 25, 35, and 45 ns * Built in decoupling caps for low noise operation * Organized as 128K x32; User configured as 256Kx16 or 512K x8 * Operation with single 5 volt supply * Low power CMOS * TTL Compatible Inputs and Outputs * 2V Data Retention, Low power standby
66 Lead PGA- Pins 8, 21, 28, 39 are grounds (P)
OPTIONS
* Timing 15ns 17ns 20ns 25ns 35ns 45ns Package Ceramic Quad Flatpack Pin Grid Array -8 Series Pin Grid Array -8 Series
MARKINGS
-15 -17 -20 -25 -35 -45
*
Q P PN
No. 702 No. 802 No. 802
66 Lead PGA- Pins 8, 21, 28, 39 are no connects (PN)
NOTE: PN indicates a no connect on pins 8, 21, 28, 39
GENERAL DESCRIPTION
The Austin Semiconductor, Inc. AS8S128K32 is a 4 Megabit CMOS SRAM Module organized as 128Kx32-bits and user configurable to 256Kx16 or 512Kx8. The AS8S128K32 achieves high speed access, low power consumption and high reliability by employing advanced CMOS memory technology. The military temperature grade product is suited for military applications. The AS8S128K32 is offered in a ceramic quad flatpack module per SMD-5962-95595 with a maximum height of 0.140 inches. This module makes use of a low profile, mutlichip module design. This device is also offered in a 1.075 inch square ceramic pin grid array per SMD 5692-93187, which has a maximum height of 0.195 inches. This package is also a low profile, multi-chip module design reducing height requirements to a minimum.
CE4 WE4
128K x 8
CE3 WE3
M2
128K x 8
M3
I/O 24 - I/O 31
128K x 8
CE2 WE2
M1
I/O 16 - I/O 23
CE1 WE1 OE A0 - 16
128K x 8
M0
I/O 8 - I/O 23
For more products and information please visit our web site at www.austinsemiconductor.com
AS8S128K32 Rev. 3.5 7/00
I/O 0 - I/O 7
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
SRAM
Austin Semiconductor, Inc.
ABSOLUTE MAXIMUM RATINGS*
Voltage of Vcc Supply Relative to Vss.....................-1V to +7V Storage Temperature..........................................-65C to +150C Short Circuit Output Current(per I/O)...............................20mA Voltage on Any Pin Relative to Vss..................-.5V to Vcc+1V Maximum Junction Temperature**.................................+175C *Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
AS8S128K32
This is a stress rating only and functional operation on the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. **Junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow. See the Application Information section at the end of this datasheet for more information.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55C

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PARAMETER Power Supply Current: Operating
CONDITIONS CE\VIH; VCC=MAX f = MAX = 1/tRC (MIN) Outputs Open CE\ = OE\ = VIH; CMOS Compatible; VCC = MAX f = 5 MHz
SYM Icc
-15 700
-17 650
MAX -20 -25 600 560
-35 520
-45 500
UNITS NOTES mA 3, 13
(1)
ISBT1
280
220
200
180
160
150
mA
(1)
ISBT2
100
80
80
60
60
60
mA
(1)
Power Supply Current: Standby
CE\ > Vcc -0.2V; Vcc = MAX VIL < Vss +0.2V; VIH > VCC -0.2V; f = 0 Hz CE\ > Vcc -0.2V; Vcc = MAX VIL < Vss +0.2V; VIH > Vcc -0.2V; f = 0 Hz "L" Version Only
ISBC1
40
40
40
40
40
40
mA
(2)
ISBC2
24
24
24
24
24
24
mA
(2)
NOTE: 1) Address switching sequence A, A+1, A+2, etc.
2) 1/2 input at HIGH, 1/2 input at LOW.
AS8S128K32 Rev. 3.5 7/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
2
SRAM
Austin Semiconductor, Inc.
CAPACITANCE TABLE (VIN = 0V, f = 1 MHz, TA = 25oC)
SYMBOL CADD COE CWE, CCE CIO PARAMETER A0 - A18 Capacitance OE\ Capacitance WE\ and CE\ Capacitance I/O 0- I/O 31 Capacitance MAX 40 40 20 20 UNITS pF pF pF pF NOTES 4 4 4 4
AS8S128K32
TRUTH TABLE MODE Read Write Standby Not Selected
OE\ L X X H
CE\ L L H L
WE\ H L X H
I/O Q D HIGH Z HIGH Z
POWER ACTIVE ACTIVE STANDBY ACTIVE
AC TEST CONDITIONS
TEST SPECIFICATIONS
Input pulse levels........................................VSS to 3V Input rise and fall times..........................................5ns Input timing reference levels.................................1.5V Output reference levels........................................1.5V Output load.............................................See Figures 1
Vz = 1.5V (Bipolar Supply)
IOL
Current Source
Device Under Test
+
+
Ceff = 50pf
Current Source
IOH
NOTES:
Vz is programable from -2V to + 7V. IOL and IOH programmable from 0 to 16 mA. Vz is typically the midpoint of VOH and VOL. IOL and IOH are adjusted to simulate a typical resistive load circuit.
Figure 1
AS8S128K32 Rev. 3.5 7/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
SRAM
Austin Semiconductor, Inc.
AS8S128K32
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (Note 5) (-55CTA125C; Vcc = 5v 10%)
DESCRIPTION
READ CYCLE READ cycle time Address access time Chip enable access time Output hold from address change Chip enable to output in Low-Z Chip disable to output in High-Z Chip enable to power-up time Chip disable to power-down time Output enable access time Output enable to output in Low-Z Output disable to output in High-Z WRITE CYCLE WRITE cycle time Chip enable to end of write Address valid to end of write Address setup time Address hold from end of write WRITE pulse width WRITE pulse width Data setup time Data hold time Write disable to output in Low-z Write enable to output in High-Z
-15 -17 -20 -25 -35 -45 SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNITS NOTES
RC AA t ACE t OH t LZCE t HZCE t PU t PD t AOE t LZOE t HZOE
t t t t
15 15 15 2 2 7 0 15 6 0 6 15 12 12 0 1 12 12 8 1 2
1 1
17 17 17 2 2 8 0 17 7 0 7 17 12 12 0 1 12 12 9 1 2 7
1 1
20 20 20 2 2 9 0 20 7 0 7 20 15 15 0 1 15 15 10 1 2 9 10
25 25 25 2 2 10 0 25 8 0 9 25 17 17 0 1 17 17 12 1 2 11
35 35 35 2 2 14 0 35 12 0 12 35 20 20 0 1 20 20 15 1 2 14
45 45 45 2 2 15 0 45 12 0 12 45 22 22 0 1 20 20 15 1 2 15
ns ns ns ns ns ns
4, 6, 7 4, 6, 7 4 4 4, 6 4, 6, 7
ns ns ns ns ns ns ns ns ns ns ns ns ns ns
WC CW t AW t AS t AH
t t
WP1
WP2 t DS t DH t LZWE t HZWE
4, 6, 7 4, 6, 7
NOTES: 1) For OE\ = HIGH condition. For OE\ = LOW condition tWP1 = tWP2 = 15 ns MIN.
AS8S128K32 Rev. 3.5 7/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
SRAM
Austin Semiconductor, Inc.
NOTES
1. All voltages referenced to VSS (GND). 2. -3v for pulse width <20ns. 3. ICC is dependent on output loading and cycle rates. The specified value applies with the outputs 1 open, and f= HZ. t RC(MIN) 4. This parameter is sampled. 5. Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted. 6. tHZCE, tHZOE and tHZWE are specified with CL= 5pF as in Fig. 2. Transition is measured +/- 200 mV typical from steady state coltage, allowing for actual tester RC time constant. 7. At any given temperature and voltage condition, tHZCE, is less than tLZCE, and tHZWE is less than tLZWE. 8. ?W/E is HIGH for READ cycle. 9. Device is continuously selected. Chip enables and output enable are held in their active state. 10. Address valid prior to or coincident with latest occurring chip enable. 11. tRC= READ cycle time. 12. Chip enable (?C/E) and write enable (?W/E) can initiate and terminate a WRITE cycle. 13. 32 bit operation
AS8S128K32
DATA RETENTION ELECTRICAL CHARACTERISTICS
DESCRIPTION VCC for Retention Data Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time CONDITIONS CE\ > VCC - 0.2V VIN > VCC - 0.2V VCC = 2.0V VCC = 3V SYMBOL VDR ICCDR ICCDR tCDR tR MIN 2 --0 tRC MAX -6 11.6 -UNITS V mA mA ns ns 4 4, 11 NOTES
LOW VCC DATA RETENTION WAVEFORM
DATA RETENTION MODE VDR >2V Vcc tCDR
VIH 4.5V 4.5V
tR VDR
CE\
VIL
AS8S128K32 Rev. 3.5 7/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
5
SRAM
Austin Semiconductor, Inc. READ CYCLE NO. 1(8,9)
AS8S128K32
tRC ADDRESS tAA tOH DQ
PREVIOUS DATA VALID DATA VALID VALID
READ CYCLE NO. 2(7,8,10)
tRC CE\ tAOE tHZOE tLZOE OE\ tLZCE tACE DQ tPU tPD Icc
DATA VALID
tHZCE
AS8S128K32 Rev. 3.5 7/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
6
SRAM
Austin Semiconductor, Inc. WRITE CYCLE NO. 1
(Chip Enable Controlled)
tWC ADDRESS tAW tAH tAS CE\ tWP1 WE\ tDS D Q HIGH Z
DATA VAILD
AS8S128K32
tCW
tDH
WRITE CYCLE NO. 2
(Write Enable Controlled)
tWC ADDRESS
ADDRESS VALID
tAW tAH tCW CE\ tAS WE\ tDS D tHZWE Q tDH
DATA VALID
tWP2
tLZWE
AS8S128K32 Rev. 3.5 7/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
7
SRAM
Austin Semiconductor, Inc.
AS8S128K32
MECHANICAL DEFINITIONS*
ASI Case #702 (Package Designator Q) SMD 5962-95595, Case Outline M
D2 D1 D
DETAIL A
R
1o - 7o b L1
B
e SEE DETAIL A
A A2 E3
SMD SPECIFICATIONS SYMBOL A A1 A2 B b D D1 D2 E e R L1 MIN 0.123 0.118 0.005 0.010 REF 0.013 0.800 BSC 0.870 0.980 0.936 0.050 BSC 0.010 TYP 0.035 0.045 0.890 1.000 0.956 0.017 MAX 0.200 0.186 0.015
*All measurements are in inches.
AS8S128K32 Rev. 3.5 7/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
8
SRAM
Austin Semiconductor, Inc.
AS8S128K32
MECHANICAL DEFINITIONS*
ASI Case #904 (Package Designator P & PN) SMD 5962-93187, Case Outline 4 and 5
4xD D1 Pin 56 D2 Pin 1
(identified by 0.060 square pad)
A A1
b1
E1
e
b
Pin 66 e b2 Pin 11
L
SMD SPECIFICATIONS SYMBOL A A1 b b1 b2 D D1/E1 D2 e L MIN 0.135 0.025 0.016 0.045 0.065 1.064 1.000 BSC 0.600 BSC 0.100 BSC 0.145 0.155 MAX 0.195 0.035 0.020 0.055 0.075 1.086
*All measurements are in inches.
AS8S128K32 Rev. 3.5 7/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
9
SRAM
Austin Semiconductor, Inc.
AS8S128K32
ORDERING INFORMATION
EXAMPLE: AS8S128K32Q-25/XT Device Number AS8S128K32 AS8S128K32 AS8S128K32 AS8S128K32 AS8S128K32 AS8S128K32 Package Type Q Q Q Q Q Q Speed ns -15 -17 -20 -25 -35 -45 Process /* /* /* /* /* /*
EXAMPLE: AS8S128K32PN-20/883C Device Number AS8S128K32 AS8S128K32 AS8S128K32 AS8S128K32 AS8S128K32 AS8S128K32 AS8S128K32 AS8S128K32 AS8S128K32 AS8S128K32 AS8S128K32 AS8S128K32 Package Type P PN P PN P PN P PN P PN P PN Speed ns -15 -15 -17 -17 -20 -20 -25 -25 -35 -35 -45 -45 Process /* /* /* /* /* /* /* /* /* /* /* /*
*AVAILABLE PROCESSES IT = Industrial Temperature Range XT = Extended Temperature Range 883C = Full Military Processing
-40oC to +85oC -55oC to +125oC -55oC to +125oC
PACKAGE NOTES P = Pins 8, 21, 28, and 39 are grounds. PN = Pins 8, 21, 28, and 39 are no connects.
AS8S128K32 Rev. 3.5 7/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
10
SRAM
Austin Semiconductor, Inc.
AS8S128K32
ASI TO DSCC PART NUMBER CROSS REFERENCE
ASI Package Designator Q
ASI Part #
AS8S128K32Q-55/883C AS8S128K32Q-55/883C AS8S128K32Q-45/883C AS8S128K32Q-45/883C AS8S128K32Q-35/883C AS8S128K32Q-35/883C AS8S128K32Q-25/883C AS8S128K32Q-25/883C AS8S128K32Q-20/883C AS8S128K32Q-20/883C AS8S128K32Q-17/883C AS8S128K32Q-17/883C
SMD Part #
5962-9559505HMA 5962-9559505HMC 5962-9559506HMA 5962-9559506HMC 5962-9559507HMA 5962-9559507HMC 5962-9559508HMA 5962-9559508HMC 5962-9559509HMA 5962-9559509HMC 5962-9559510HMA 5962-9559510HMC
ASI Package Designator P & PN
ASI Part #
AS8S128K32P-55/883C AS8S128K32P-55/883C AS8S128K32P-45/883C AS8S128K32P-45/883C AS8S128K32P-35/883C AS8S128K32P-35/883C AS8S128K32P-25/883C AS8S128K32P-25/883C AS8S128K32P-20/883C AS8S128K32P-20/883C AS8S128K32P-17/883C AS8S128K32P-17/883C
SMD Part #
5962-9318705H5A 5962-9318705H5C 5962-9318706H5A 5962-9318706H5C 5962-9318707H5A 5962-9318707H5C 5962-9318708H5A 5962-9318708H5C 5962-9318709H5A 5962-9318709H5C 5962-9318710H5A 5962-9318710H5C
ASI Part #
AS8S128K32PN-55/883C AS8S128K32PN-55/883C AS8S128K32PN-45/883C AS8S128K32PN-45/883C AS8S128K32PN-35/883C AS8S128K32PN-35/883C AS8S128K32PN-25/883C AS8S128K32PN-25/883C AS8S128K32PN-20/883C AS8S128K32PN-20/883C AS8S128K32PN-17/883C AS8S128K32PN-17/883C
SMD Part #
5962-9318705H4A 5962-9318705H4C 5962-9318706H4A 5962-9318706H4C 5962-9318707H4A 5962-9318707H4C 5962-9318708H4A 5962-9318708H4C 5962-9318709H4A 5962-9318709H4C 5962-9318710H4A 5962-9318710H4C
Please note, -15 not currently available on the SMD's.
AS8S128K32 Rev. 3.5 7/00
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
11

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