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| BFP182R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 8 GHz F = 1.2 dB at 900 MHz Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 2) RthJS 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP182R Maximum Ratings Parameter Marking RGs 1=E Pin Configuration 2=C 3=E 4=B Package SOT143R Unit V Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 12 20 20 2 35 4 250 150 -65 ... 150 -65 ... 150 Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 69 C 1) mA mW C 325 K/W 1 Aug-09-2001 BFP182R Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 10 mA, VCE = 8 V hFE 50 100 200 IEBO 1 A ICBO 100 nA ICES 100 A V(BR)CEO 12 V Symbol min. Values typ. max. Unit 2 Aug-09-2001 BFP182R Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter min. AC characteristics (verified by random sampling) Transition frequency IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 3 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum stable 1) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Power gain, maximum available 2) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Transducer gain IC = 10 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz 1G ms 2G ma Unit max. 0.45 dB GHz pF typ. 8 0.27 0.27 0.6 fT Ccb Cce Ceb F 6 - Gms - 1.2 1.9 21.5 - Gma - 15 - |S21e|2 17 11 - = |S21 / S12 | = |S21 / S12 | (k-(k2-1)1/2) 3 Aug-09-2001 BFP182R SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 4.8499 21.742 0.91624 2.2595 0.5641 2.8263 8.8619 22.72 6.5523 1.0132 1.7541 0 3 fA V V BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 84.113 0.14414 10.004 0.039478 3.4217 2.1858 1.0378 0.43147 0 0.31068 0 0 0.64175 A A NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.56639 8.4254 0.54818 5.9438 0.071955 1.8159 0.40796 0.34608 490.25 0.19281 0.75 1.11 300 fA fA mA - fF ps mA V ns V deg fF - V fF V eV K - All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut fur Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: L BI = L BO = L EI = L EO = L CI = L CO = C BE = C CB = C CE = 0.89 0.73 0.4 0.15 0 0.42 189 15 187 fF fF Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4 Aug-09-2001 nH nH nH nH nH nH fF BFP182R Total power dissipation Ptot = f (TS ) 300 mW P tot 200 150 100 50 0 0 20 40 60 80 100 120 C 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 3 10 2 K/W Ptotmax / PtotDC - 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 5 Aug-09-2001 BFP182R Collector-base capacitance Ccb = f (VCB ) f = 1MHz Transition frequency f T = f (I C) V CE = Parameter 0.50 pF 10 GHz 10V 5V 0.40 0.35 8 7 Ccb 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 fT 3V 6 5 4 3 2 1 0 0 1V 0.7V 2V 4 8 12 16 V 22 5 10 15 mA 25 VCB IC Power Gain Gma , Gms = f(IC ) f = 0.9GHz VCE = Parameter 23 dB 10V 8V 5V 3V Power Gain Gma, Gms = f(I C) f = 1.8GHz VCE = Parameter 16 dB 10V 3V 21 20 19 14 13 12 2V G G 11 10 9 8 18 17 16 15 14 13 12 11 2V 1V 7 6 5 1V 0.7V 0.7V 10 0 5 10 15 mA 25 4 0 5 10 15 mA 25 IC IC 6 Aug-09-2001 BFP182R Power Gain Gma , Gms = f(VCE):_____ |S21|2 = f(VCE):--------f = Parameter 24 Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) VCE = Parameter, f = 900MHz 28 dBm IC=10mA dB 0.9GHz 24 20 18 0.9GHz 8V 5V 22 20 3V 2V IP 3 G 18 16 16 14 12 10 8 6 0 1.8GHz 14 12 1.8GHz 10 8 6 4 2 1V 2 4 6 8 V 12 0 0 5 10 15 mA 25 VCE IC Power Gain Gma , Gms = f(f) VCE = Parameter 35 Power Gain |S21|2= f(f) V CE = Parameter 30 IC=10mA dB dB IC =10mA 25 S21 20 G 20 15 15 10 10V 10 10V 1V 0.7V 5 2V 1V 0.7V 5 0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5 0 0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5 f f 7 Aug-09-2001 |
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