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BCX42, BSS63
PNP Silicon AF an Swiching Transistors For general AF applications High breakdown voltage Low collector-emitter saturation voltage Complementary types: BCX41, BSS64 (NPN)
3

2 1
VPS05161
Type BCX42 BSS63
Maximum Ratings Parameter
Marking DKs BMs 1=B 1=B
Pin Configuration 2=E 2=E 3=C 3=C
Package SOT23 SOT23
Symbol VCEO VCBO VEBO
BSS63 100 110 5
BCX42 125 125 5
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage
DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 79 C Junction temperature Storage temperature
IC ICM IB IBM Ptot Tj Tstg
800 1 100 200 330 150 -65 ... 150
mA A mA mW C
Thermal Resistance Junction - soldering point 1) RthJS
215
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Jul-10-2001
BCX42, BSS63
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 100 A, IB = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 80 V, IE = 0 VCB = 100 V, IE = 0 Collector cutoff current VCB = 80 V, IE = 0 , TA = 150 C VCB = 100 V, IE = 0 , TA = 150 C Emitter cutoff current VEB = 4 V, IC = 0 Collector cutoff current VCE = 100 V, TA = 85 C VCE = 100 V, TA = 125 C DC current gain 1) IC = 100 A, VCE = 1 V IC = 10 mA, VCE = 5 V IC = 20 mA, VCE = 5 V IC = 100 mA, VCE = 1 V IC = 200 mA, VCE = 1 V BCX42 BSS63 BSS63 BCX42 BCX42 BCX42 BCX42 hFE 25 30 30 63 40 ICEO 10 75 BSS63 BCX42 IEBO BSS63 BCX42 ICBO 20 20 100 ICBO 100 100 BSS63 BCX42 V(BR)EBO BSS63 BCX42 V(BR)CBO 110 125 5 V(BR)CEO 100 125 typ. max.
Unit
V
nA
A
nA A
-
1) Pulse test: t 300s, D = 2%
2
Jul-10-2001
BCX42, BSS63
Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter min. DC Characteristics Collector-emitter saturation voltage1) IC = 300 mA, IB = 30 mA IC = 25 mA, IB = 2.5 mA IC = 75 mA, IB = 7.5 mA Base-emitter saturation voltage 1) IC = 300 mA, IB = 30 mA AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 12 fT 150 BCX42 BCX42 BSS63 BSS63 VBEsat VCEsat 0.9 0.25 0.9 1.4 typ. max.
Unit
V
MHz pF
3
Jul-10-2001
BCX42, BSS63
Total power dissipation Ptot = f(TS)
Collector current I C = f (VBE) VCE = 1V
10 3 mA
BCX 42/BSS 63 EHP00429
360
mW
300 270
C
10 2 5 TA = 150 C 25 C -50 C
P tot
240 210 180 150 120 90 60 30 0 0
10 1 5
10 5
0
10 -1
15 30 45 60 75 90 105 120
C 150 TS
0
1
2
V VBE
3
Permissible pulse load Ptotmax / PtotDC = f (tp )
10 3 Ptot max 5 Ptot DC
BCX 42/BSS 63 EHP00430
Transition frequency fT = f (IC) VCE = 5V
10 3 MHz
T
BCX 42/BSS 63 EHP00431
D=
tp T
tp
fT
5
10 2 5
10 1 5
D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 2
5
10 0 10 -6
10 -5
10 -4
10 -3
10 -2
s tp
10 0
10 1 10 0
5 10 1
5
10 2
mA
10 3
C
4
Jul-10-2001
BCX42, BSS63
Base-emitter saturation voltage IC = f (VBEsat ), hFE = 10
10 3 mA
BCX 42/BSS 63 EHP00432
Collector-emitter saturation voltage IC = f (VCEsat), h FE = 10
3 BCX 42/BSS 63 EHP00433
10 mA
C
10 2 5 150 C 25 C -50 C
C
10 5
2
150 C 25 C -50 C
10 1 5
10 5
1
10 5
0
10 5
0
10 -1
0
1
2
V VBE sat
3
10 -1
0
200
400
600 mV 800 VCE sat
Collector cutoff current ICBO = f (TA) VCB = 100V
10 4 nA
BCX 42/BSS 63 EHP00434
DC current gain hFE = f (I C) VCE = 1V
10 3
BCX 42/BSS 63 EHP00435
CB0
10 3 5 10 2 5 10 1 5 10 5 10 -1
0
max
h FE
5
150 C 25 C -50 C 10 2
typ
5
0
50
100
C TA
150
10 1 10 -1
5 10 0
5 10 1
5 10 2
mA 10 3
C
5
Jul-10-2001

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