 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BSS 63 PNP Switching Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung 2.9 0.1 1.1 PNP 250 mW SOT-23 (TO-236) 0.01 g 0.4 3 Plastic case Kunststoffgehause 1.3 0.1 Type Code 1 2 2.5 max Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1.9 Dimensions / Mae in mm 1=B 2=E 3=C Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Peak Collector current - Kollektor-Spitzenstrom Peak Base current - Basis-Spitzenstrom Junction temp. - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open - VCE0 - VCB0 - VEB0 Ptot - IC - ICM - IBM Tj TS Grenzwerte (TA = 25/C) BSS 63 100 V 110 V 6V 250 mW 1) 100 mA 100 mA 100 mA 150/C - 65...+ 150/C Characteristics (Tj = 25/C) Min. Collector-Base cutoff current - Kollektorreststrom IE = 0, - VCB = 90 V IE = 0, - VCB = 90 V, Tj = 150/C Emitter-Base cutoff current - Emitterreststrom IC = 0, - VEB = 6 V - IC = 25 mA, - IB = 2.5 mA - IC = 25 mA, - IB = 2.5 mA - IEB0 1 Kennwerte (Tj = 25/C) Typ. - - - - - Max. 100 nA 50 :A 100 nA 250 mV 900 mV - ICB0 - ICB0 - - - - - Collector saturation volt. - Kollektor-Sattigungsspg. ) - VCEsat 1 Base saturation voltage - Basis-Sattigungsspannung ) - VBEsat 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 14 Switching Transistors Characteristics (Tj = 25/C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis 1) - VCE = 1 V, - IC = 10 mA - VCE = 1 V, - IC = 25 mA Gain-Bandwidth Product - Transitfrequenz - VCE = 5 V, - IC = 25 mA, f = 100 MHz - VCB = 10 V, IE = ie = 0, f = 1 MHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren fT CCB0 50 MHz - RthA BSS 64 85 MHz 3 pF hFE hFE 30 30 - - BSS 63 Kennwerte (Tj = 25/C) Typ. Max. - - - - 420 K/W 2) Collector-Base Capacitance - Kollektor-Basis-Kapazitat Marking - Stempelung BSS 63 = BM ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 1 2 15 |
Price & Availability of BSS63
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |