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| HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque (TO-220) TO-220 TO-263 IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 4.7 TC = 25C Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C IXFA 3N120 IXFP 3N120 VDSS =1200 V = 3A ID25 RDS(on) = 4.5 trr 300 ns Maximum Ratings 1200 1200 20 30 3 12 3 20 700 10 200 -55 to +150 150 -55 to +150 300 V V V V A A A mJ mJ V/ns W C C C C TO-220 (IXFP) D (TAB) G DS TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TO-263 (IXFA) G S D (TAB) G = Gate S = Source D = Drain TAB = Drain Features Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) Rated for unclamped Inductive load Switching (UIS) Molding epoxies meet UL 94 V-0 flammability classification Advantages Easy to mount Space savings High power density 1.13/10 Nm/lb.in. 4 2 g g Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 2.5 5.0 100 TJ = 25C TJ = 125C 50 2 4.5 V V nA A mA VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 mA VDS = VGS, ID = 1.5 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % (c) 2004 IXYS All rights reserved DS99036B(07/04) IXFA 3N120 IXFP 3N120 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1.5 2.5 1050 VGS = 0 V, VDS = 25 V, f = 1 MHz 100 25 17 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 4.7 (External), 15 32 18 39 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 9 22 0.62 (TO-220) 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain Bottom Side TO-220 (IXFP) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 20 V; ID = 0.5 * ID25, pulse test Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 3 12 1.5 300 A A V ns C A 1. 2. 3. 4. Gate Drain Source Drain Bottom Side Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % TO-263 (IXFA) Outline IF = IS, -di/dt = 100 A/s, VR = 100 V 0.4 1.2 Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 IXFA 3N120 IXFP 3N120 Fig. 1. Output Characteristics @ 25 Deg. C 3 2.5 VG S = 10V 7V 6V 7 6 7V 5 Fig. 2. Extended Output Characteristics @ 25 deg. C VG S = 10V I D - Amperes I D - Amperes 2 1 .5 1 0.5 0 0 2 4 6 8 4 3 2 1 0 6V 5V 5V 1 0 1 2 0 5 1 0 1 5 20 25 30 V DS - Volts V DS - Volts Fig. 3. Output Characteristics @ 125 Deg. C 3 2.5 VG S = 10V 7V 6V Fig. 4. RDS(on) Normalized to ID25 Value vs. Junction Temperature 2.8 2.5 VG S = 10V R D S (on) - Normalized 2.2 1 .9 1 .6 1 .3 1 0.7 0.4 I D = 3A I D = 1.5A I D - Amperes 2 1 .5 5V 1 0.5 0 0 5 1 0 1 5 20 25 -50 -25 0 25 50 75 1 00 1 25 1 50 V DS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID25 Value vs. I D 2.8 2.5 VG S = 10V T J = 125 C 3.5 3 2.5 2 1 .5 1 0.5 0 0 1 2 3 4 5 6 7 -50 Fig. 6. Drain Current vs. Case Temperature R D S (on) - Normalized 1 .9 1 .6 1 .3 1 0.7 T J = 25 C I D - Amperes 2.2 -25 0 25 50 75 1 00 1 25 1 50 I D - Amperes TC - Degrees Centigrade (c) 2004 IXYS All rights reserved DS99036B(07/04) IXFA 3N120 IXFP 3N120 Fig. 7. Input Admittance 6 5 8 7 6 T J = -40 C 25 C 125 C Fig. 8. T ransconductance 4 3 2 1 0 3.5 4 4.5 5 5.5 6 6.5 T J = 120 C 25 C -40 C g f s - Siemens I D - Amperes 5 4 3 2 1 0 0 1 .5 3 4.5 6 7.5 9 V GS - Volts I D - Amperes Fig. 9. Source Current vs. Source-To-Drain Voltage 9 8 7 8 1 0 Fig. 10. Gate Charge VD S = 600V I D = 1.5A I G = 10mA I S - Amperes VG S - Volts T J = 25 C 6 5 4 3 2 1 0 0.4 0.5 0.6 0.7 0.8 0.9 T J = 125 C 6 4 2 0 0 8 1 6 24 32 40 48 V SD - Volts Q G - nanoCoulombs Fig. 11. Capacitance 1 0000 f = 1M Hz 0.7 0.6 C iss 1 000 Fig. 12. Maximum T ransient Thermal Resistance Capacitance - pF R (th) J C - (C/W ) 25 30 35 40 0.5 0.4 0.3 0.2 0.1 0 C oss 1 00 C rss 1 0 0 5 1 0 1 5 V DS - Volts 20 1 Pulse Width - milliseconds 1 0 1 00 1 000 IXYS reserves the right to change limits, test conditions, and dimensions. |
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