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| HiPerFETTM Power MOSFET Single Die MOSFET Preliminary data sheet VDSS IXFE 55N50 IXFE 50N50 ID25 RDS(on) 80 m 100 m 500 V 52 A 500 V 47 A trr 250 ns ISOPLUS 227TM (IXFE) Symbol Test Conditions VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C T C = 25C; TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C Note 1 55N50 50N50 55N50 50N50 Maximum Ratings 500 500 20 30 47 53 200 220 55 60 5 500 -55 ... +150 150 -55 ... +150 2500 3000 V V V V A A A A A mJ V/ns W C C C V~ V~ S D G S G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 19 g Features *Low cost direct-copper bonded aluminium package *Encapsulating epoxy meets UL 94 V-0, flammability classification *2500V isolation *Low drain to case capacitance *Low RDS (on) HDMOSTM process *Rugged polysilicon gate cell structure *Unclamped Inductive Switching (UIS) rated *Low package inductance *Fast intrinsic Rectifier *Conforms to SOT-227B outline Applications * DC-DC converters * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * Temperature and lighting controls Advantages * Easy to mount * Space savings * High power density Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = 20V, VGS = 0V VDS = VDSS VGS = 0 V VGS = 10V, ID = IT Note 2 Min. 500 2.5 Characteristic Values Typ. Max. V 4.5 100 V nA TJ = 25C TJ = 125C 55N50 50N50 400 A 2 mA 80 m 100 m (c) 2002 IXYS All rights reserved 98904 (2/02) IXFE 55N50 IXFE 50N50 Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK 0.07 VGS = 10 V, VDS = 0.5 * VDSS, ID = IT VGS = 10 V, VDS = 0.5 * VDSS, ID = IT RG = 1 (External), VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 10 V; ID = IT, Note 2 Characteristic Values Min. Typ. Max. 45 9400 1200 460 45 60 120 45 330 55 185 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W ISOPLUS-227 B Source-Drain Diode (TJ = 25C, unless otherwise specified) Symbol Test Conditions IS ISM VSD t rr QRM IRM VGS = 0 Repetitive; pulse width limited by TJM 55N50 50N50 55N50 50N50 Characteristic Values Min. Typ. Max. 55 50 220 200 1.3 180 30 2 8 A A A A V ns ns C A IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % I F = IS, -di/dt = 100 A/s, V R = 100 V TJ = 25C TJ = 25C TJ = 25C Please see IXFN55N50 data sheet for characteristic curves. Notes: 1. Pulse width limited by TJM. 2. Pulse test, t 300 ms, duty cycle d 2%. 3. IT Test current: IXFE55N50: IT = 27.5 A IXFE50N50: IT = 25 A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
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