 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19120/D The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. * CDMA Performance @ 1990 MHz, 26 Volts IS-97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13 885 kHz -- -47 dBc @ 30 kHz BW 1.25 MHz -- -55 dBc @ 12.5 kHz BW 2.25 MHz -- -55 dBc @ 1 MHz BW Output Power -- 15 Watts (Avg.) Power Gain -- 11.7 dB Efficiency -- 16% * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency, High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 1990 MHz, 120 Watts (CW) Output Power * S-Parameter Characterization at High Bias Levels * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters MRF19120 MRF19120S 1990 MHz, 120 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 375D-04, STYLE 1 NI-1230 MRF19120 CASE 375E-03, STYLE 1 NI-1230S MRF19120S MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 -0.5, +15 389 2.22 -65 to +150 200 Unit Vdc Vdc Watts W/C C C ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 1 (Minimum) M3 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.45 Unit C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 5 MOTOROLA RF Motorola, Inc. 2002 DEVICE DATA MRF19120 MRF19120S 1 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS (1) Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 Adc) Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) ON CHARACTERISTICS (1) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) Gate Threshold Voltage (VDS = 10 V, ID = 200 A) Gate Quiescent Voltage (VDS = 26 V, ID = 500 mA) Drain-Source On-Voltage (VGS = 10 V, ID = 2 A) DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 1990.0 MHz, f2 = 1990.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 1990.0 MHz, f2 = 1990.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 1990.0 MHz, f2 = 1990.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 1990.0 MHz, f2 = 1990.1 MHz) Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 1930.0 MHz, f2 = 1930.1 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 1930.0 MHz, f2 = 1930.1 MHz) Intermodulation Distortion (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 1930.0 MHz, f2 = 1930.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 2 f1 = 1930.0 MHz, f2 = 1930.1 MHz) Gps 500 mA, MRF19120 MRF19120S 500 mA, IMD 500 mA, MRF19120 MRF19120S IRL 500 mA, Gps 500 mA, 500 mA, IMD 500 mA, IRL 500 mA, P1dB Gps 500 mA, -- -- 120 11 -- -- Watts dB -- -14 -- dB -- -31 -- dB -- 34 -- % -- 11.7 -- dB -- -- -- -31 -31 -12 -28 -27 -9 dB dB 10.7 10.5 30 11.7 11.7 34 -- -- -- % dB Crss -- 2.8 -- pF gfs VGS(th) VGS(Q) VDS(on) -- 2.5 3 -- 4.8 3 3.9 0.38 -- 3.8 5 0.5 S Vdc Vdc Vdc V(BR)DSS IGSS IDSS 65 -- -- -- -- -- -- 1 10 Vdc Adc Adc Symbol Min Typ Max Unit Power Output, 1 dB Compression Point (VDD = 26 Vdc, CW, IDQ = 2 500 mA, f1 = 1990.0 MHz) Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 f1 = 1990.0 MHz) (1) Each side of device measured separately. (2) Device measured in push-pull configuration. MRF19120 MRF19120S 2 MOTOROLA RF DEVICE DATA ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) (continued) Drain Efficiency (VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 f1 = 1990.0 MHz) 500 mA, -- 45 -- % Output Mismatch Stress (VDD = 26 Vdc, Pout = 120 W CW, IDQ = 2 500 mA, f = 1990 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) (2) Device measured in push-pull configuration. No Degradation In Output Power Before and After Test MOTOROLA RF DEVICE DATA MRF19120 MRF19120S 3 VDD + C31 + C30 C28 + C17 C16 + C15 R1 Z6 Z1 COAX1 Z2 COAX2 L1 Z5 C1 Z7 Z9 R2 C2 Z11 L2 Z13 C4 Z15 Z17 Z19 R6 Z8 Z10 R5 Z12 C3 Z14 Z16 Z18 Z20 Z22 DUT C13 C7 Z24 Z26 L3 Z28 Z30 Z32 Z34 C9 Z36 C14 C29 C27 C12 Z40 Z41 Z42 C32 C33 C34 + C35 + + VGG + C19 B1 R3 RF OUTPUT Z4 RF INPUT Z38 C8 COAX3 C11 COAX4 Z25 Z27 Z29 Z31 Z33 Z35 C10 Z37 Z39 C5 Z21 Z23 C6 + VGG + C25 R4 C24 C23 C21 B2 C22 C20 C37 + C39 L4 + C36 C38 VDD + + + C43 C44 + C40 C41 C42 B1, B2 C1, C2 C3, C4, C9, C10 C5, C12 C6, C7 C8 C11 C13, C20, C29, C37 C14, C21, C28, C38 C15, C22, C31, C40 C16, C23, C33, C43 C17, C24, C32, C41 C19, C25 C27, C34, C36, C42 C30, C39 C35, C44 Coax1, Coax2 Coax3, Coax4 L1 L2 L3, L4 R1, R2 R3, R4 R5, R6 Z1 Ferrite Beads, Fair Rite 0.6 - 4.5 pF Variable Capacitors, Johanson Gigatrim 10 pF Chip Capacitors, B Case, ATC 0.4 - 2.5 pF Variable Capacitors, Johanson Gigatrim 2.0 pF Chip Capacitors, B Case, ATC 1.1 pF Chip Capacitor, B Case, ATC 0.1 pF Chip Capacitor, B Case, ATC 5.1 pF Chip Capacitors, B Case, ATC 91 pF Chip Capacitors, B Case, ATC 100 F, 50 V Electrolytic Capacitors, Sprague 0.039 F Chip Capacitors, B Case, ATC 1000 pF Chip Capacitors, B Case, ATC 0.020 F Chip Capacitors, B Case, ATC 22 F, 35 V Tantalum Surface Mount Chip Capacitors, Kemet 1.0 F, 35 V Tantalum Surface Mount Chip Capacitors, Kemet 470 F, 63 V Electrolytic Capacitors, Sprague 25 , Semi Rigid Coax, 70 mil OD, 1.05 Long 50 , Semi Rigid Coax, 85 mil OD, 1.05 Long 5.0 nH, Minispring Inductor, Coilcraft 8.0 nH, Minispring Inductor, Coilcraft 5.60 nH, Microspring Inductors, Coilcraft 1 k, 1/2 W Fixed Metal Film Resistors, Dale 270 , 1/8 W Fixed Film Chip Resistors, Dale 1.0 k, 1/8 W Fixed Film Chip Resistors, Dale 0.150 x 0.080 Microstrip Z2 Z4, Z5 Z6, Z7 Z8, Z9 Z10, Z11 Z12, Z13 Z14, Z15 Z16, Z17 Z18, Z19 Z20, Z21 Z22, Z23 Z24, Z25 Z26, Z27 Z28, Z29 Z30, Z31 Z32, Z33 Z34, Z35 Z36, Z37 Z38, Z39 Z40 Z41 Z42 Board Material Connectors 0.320 x 0.080 Microstrip 1.050 x 0.080 Microstrip 0.120 x 0.080 Microstrip 0.140 x 0.080 Microstrip 0.610 x 0.080 Microstrip 0.135 x 0.080 Microstrip 0.130 x 0.080 Microstrip 0.300 x 0.350 Microstrip 0.150 x 0.500 Microstrip 0.075 x 0.500 Microstrip 0.330 x 0.500 Microstrip 0.100 x 0.550 Microstrip 0.175 x 0.550 Microstrip 0.045 x 0.550 Microstrip 0.190 x 0.325 Microstrip 0.080 x 0.325 Microstrip 0.515 x 0.080 Microstrip 0.020 x 0.080 Microstrip 0.565 x 0.080 Microstrip 0.100 x 0.080 Microstrip 0.470 x 0.080 Microstrip 0.100 x 0.080 Microstrip 0.03 Teflon, r = 2.55 Copper Clad, 2 oz. Cu N-Type Panel Mount, Stripline Figure 1. 1.93 - 1.99 GHz Broadband Test Circuit Schematic MRF19120 MRF19120S 4 MOTOROLA RF DEVICE DATA C34 C35 + V DD C19 VGG C17 B1 R3 R1 C1 C2 L2 L1 R2 R4 B2 + C24 VGG C25 C22 C23 C4 R6 C6 C21 C20 C36 C37 C39 C38 + C40 C3 C5 C8 C16 + C14 C7 L3 C15 C13 C30 C29 C31 C28 + C32 C33 C27 R5 C9 C11 C10 L4 C12 C41 C43 + V DD MRF19120 C42 C44 Figure 2. MRF19120 Test Circuit Component Layout MOTOROLA RF DEVICE DATA MRF19120 MRF19120S 5 TYPICAL CHARACTERISTICS 13 12 Gps , POWER GAIN (dB) 11 1500 mA 1300 mA 1100 mA 1000 mA 13 12 G ps, POWER GAIN (dB) 11 VDD = 26 Vdc, IDQ = 2 x 500 mA 9 Two-Tone, 100 kHz Tone Spacing Output Power = 120 W PEP 8 7 6 5 1930 1945 1960 f, FREQUENCY (MHz) 1975 IMD 1990 Gps 50 45 40 35 VSWR -24 -26 -28 -30 -32 , EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) 2 10 10 9 8 750 mA VDD = 26 Vdc f1 = 1990.0 MHz f2 = 1990.1 MHz 1.0 10 Pout, OUTPUT POWER (WATTS) PEP 100 1.5 500 mA 0.1 1 Figure 3. Power Gain versus Output Power Figure 4. Class AB Broadband Circuit Performance -20 -30 -40 -50 3rd Order -60 -70 5th Order 0.1 7th Order 100 VDD = 26 Vdc IDQ = 2 x 500 mA f1 = 1990.0 MHz f2 = 1990.1 MHz IMD, INTERMODULATION DISTORTION (dBc) -30 -40 VDD = 26 Vdc f1 = 1990.0 MHz f2 = 1990.1 MHz 500 mA -50 750 mA -60 -70 1100 mA 1000 mA 1300 mA 1500 mA 0.1 1.0 10 Pout, OUTPUT POWER (WATTS) PEP 100 IMD, INTERMODULATION DISTORTION (dBc) -20 1.0 10 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Intermodulation Distortion versus Output Power Figure 6. Intermodulation Distortion Products versus Output Power 80 14 12 Gps , POWER GAIN (dB) 0 VDD = 26 Vdc, IDQ = 2 x 750 mA, f = 1990 MHz CDMA 9 Channels Forward, Pilot:0, Paging1, Traffic:8-13, Sync:32 -20 8 885 kHz @ 30 kHz BW, 1.25 MHz @ 12.5 kHz BW, 2.25 MHz @ 1 MHz BW -40 6 2.25 MHz 885 kHz ACPR -60 4 1.25 MHz 2 0.1 1.0 10 100 -80 10 40 20 12 G ps , POWER GAIN (dB) 11 Gps 60 40 , EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) 13 Gps 10 9 8 7 6 5 0.1 1.0 VDD = 26 Vdc, IDQ = 2 x 500 mA Two-Tone, 100 kHz Tone Spacing IMD 20 0 -20 -40 -60 10 100 -80 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) AVG. Figure 7. Power Gain, Efficiency, and IMD versus Output Power Figure 8. Power Gain, Efficiency, and ACPR versus Output Power MRF19120 MRF19120S 6 MOTOROLA RF DEVICE DATA , EFFICIENCY (%) ACPR (dB) VSWR 1930 MHz Zsource Zo = 5 f = 1990 MHz Zload 1930 MHz f = 1990 MHz VDD = 26 V, IDQ = 2 f MHz 1930 1960 1990 500 mA, Pout = 120 W PEP Zload 3.9 + j1.7 4.8 + j0.8 4.9 + j0.3 Zsource 1.64 + j2.6 2.10 + j2.8 2.10 + j1.4 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test - Output Matching Network Z source Z + load Figure 9. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF19120 MRF19120S 7 NOTES MRF19120 MRF19120S 8 MOTOROLA RF DEVICE DATA NOTES MOTOROLA RF DEVICE DATA MRF19120 MRF19120S 9 NOTES MRF19120 MRF19120S 10 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS Q bbb B 2 M 2X A A G4 L 1 TA M B M NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.52 (38.61) BASED ON M3 SCREW. DIM A B C D E F G H K L M N Q R S aaa bbb ccc INCHES MIN MAX 1.615 1.625 0.395 0.405 0.150 0.200 0.455 0.465 0.062 0.066 0.004 0.007 1.400 BSC 0.079 0.089 0.117 0.137 0.540 BSC 1.219 1.241 1.218 1.242 0.120 0.130 0.355 0.365 0.365 0.375 0.013 REF 0.010 REF 0.020 REF DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 41.02 41.28 10.03 10.29 3.81 5.08 11.56 11.81 1.57 1.68 0.10 0.18 35.56 BSC 2.01 2.26 2.97 3.48 13.72 BSC 30.96 31.52 30.94 31.55 3.05 3.30 9.01 9.27 9.27 9.53 0.33 REF 0.25 REF 0.51 REF 3 4 B (FLANGE) 4X K aaa M 4X D TA M B M ccc B M M TA R (LID) M B M ccc M TA N (LID) M H C F S (INSULATOR) E PIN 5 T M (INSULATOR) bbb M SEATING PLANE bbb M TA M B M TA M B M CASE 375D-04 ISSUE C NI-1230 MRF19120 STYLE 1: PIN 1. 2. 3. 4. 5. A A (FLANGE) 4X Z NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. L B 1 2 ccc 3 4X 4 M TA R (LID) M B M B (FLANGE) K aaa 4X D M H F TA M B M S (INSULATOR) ccc M TA N (LID) M B M bbb M TA M B M C E PIN 5 M (INSULATOR) bbb M SEATING PLANE DIM A B C D E F H K L M N R S Z aaa bbb ccc INCHES MIN MAX 1.325 1.335 0.395 0.405 0.150 0.200 0.455 0.465 0.062 0.066 0.004 0.007 0.079 0.089 0.117 0.137 0.540 BSC 1.219 1.241 1.218 1.242 0.355 0.365 0.365 0.375 0 0.040 0.013 REF 0.010 REF 0.020 REF DRAIN DRAIN GATE GATE SOURCE MILLIMETERS MIN MAX 33.66 33.91 10.03 10.29 3.81 5.08 11.56 11.81 1.57 1.68 0.10 0.18 2.01 2.26 2.97 3.48 13.72 BSC 30.96 31.52 30.94 31.55 9.01 9.27 9.27 9.53 0 1.02 0.33 REF 0.25 REF 0.51 REF T B M TA M CASE 375E-03 ISSUE C NI-1230S MRF19120S STYLE 1: PIN 1. 2. 3. 4. 5. MOTOROLA RF DEVICE DATA MRF19120 MRF19120S 11 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. MOTOROLA and the logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu. Minato-ku, Tokyo 106-8573 Japan. 81-3-3440-3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852-26668334 Technical Information Center: 1-800-521-6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF19120 MRF19120S 12 MOTOROLA RF DEVICE MRF19120/D DATA |
Price & Availability of MRF19120S
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |