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| BBY 53-02W Silicon Tuning Diode Preliminary data * High Q hyperabrupt tuning diode * Designed for low tuning voltage operation for VCO's in mobile communications equipment * High ratio at low reverse voltage 2 1 VES05991 Type BBY 53-02W Marking L Ordering Code Q62702-B0862 Pin Configuration 1=C 2=A Package SCD-80 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 6 20 -55 ...+150 -55 ...+150 Unit V mA C VR IF T op T stg Semiconductor Group Semiconductor Group 11 Au 1998-11-01 -20-1998 BBY 53-02W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. max. 10 200 Unit IR IR - nA VR = 4 V Reverse current VR = 4 V, TA = 65 C AC characteristics Diode capacitance CT 4.8 1.85 1.8 5.3 2.4 2.2 0.37 0.12 1.8 5.8 3.1 2.6 - pF VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Capacitance ratio CT1/C T3 rs CC Ls pF nH VR = 1 V, VR = 3 V, f = 1 MHz Series resistance VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group Semiconductor Group 22 Au 1998-11-01 -20-1998 BBY 53-02W Diode capacitance CT = f (V R) f = 1MHz 6 pF CT 4 3 2 1 0 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 V 3.0 VR Semiconductor Group Semiconductor Group 33 Au 1998-11-01 -20-1998 |
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