 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Power Transistors 2SD1751 Silicon NPN triple diffusion planar type Unit: mm s Features q q 10.0 -0. +0.3 7.20.3 0.80.2 For power amplification Complementary to 2SB1170 7.00.3 3.00.2 3.50.2 1.10.1 0.850.1 0.40.1 q High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25C) Ratings 60 60 6 4 2 15 1.3 150 -55 to +150 Unit V 1.00.2 0.750.1 2.30.2 4.60.4 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Collector 3:Emitter I Type Package 3.50.2 2.00.2 7.00.3 Unit: mm 0 to 0.15 3.00.2 10.20.3 7.20.3 V A A 1.0 max. 2.5 0.750.1 1.10.1 0.5 max. 0.90.1 0 to 0.15 W 1 2 3 C C 2.30.2 4.60.4 1:Base 2:Collector 3:Emitter I Type Package (Y) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h (TC=25C) Symbol ICES ICEO IEBO VCEO hFE1 hFE2* VBE VCE(sat) fT ton tstg tf IC = 1A, IB1 = 0.1A, IB2 = - 0.1A Conditions VCE = 60V, VBE = 0 VCE = 30V, IB = 0 VEB = 6V, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 0.1A VCE = 4V, IC = 1A VCE = 4V, IC = 1A IC = 2A, IB = 0.2A VCE = 10V, IC = 0.5A, f = 1MHz 20 0.2 3.5 0.7 60 35 70 250 1.2 2 V V MHz s s s min typ max 200 300 1 Unit A A mA V FE2 Rank classification Q 70 to 150 P 120 to 250 Rank hFE2 2.50.2 1.0 2.50.2 V 1.0 1 Power Transistors PC -- Ta 20 5 (1) TC=Ta (2) Without heat sink (PC=1.3W) TC=25C 5 IB=100mA 80mA 3 50mA 40mA 2 30mA 20mA 1 (2) 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 10mA 5mA 1mA 0 0 0.5 1.0 1.5 25C 2SD1751 IC -- VCE 6 VCE=4V IC -- VBE Collector power dissipation PC (W) Collector current IC (A) 15 Collector current IC (A) (1) 4 TC=100C 4 -25C 10 3 2 5 1 2.0 2.5 3.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=10 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=100C 25C 10000 hFE -- IC 1000 VCE=4V 300 100 30 10 3 1 0.3 0.1 0.01 0.03 fT -- IC VCE=10V f=1MHz TC=25C Forward current transfer ratio hFE 1000 300 100 30 10 3 1 0.01 0.03 TC=100C 25C -25C -25C 0.1 0.3 1 3 10 0.1 0.3 1 3 10 Transition frequency fT (MHz) 3000 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Area of safe operation (ASO) 100 30 103 Non repetitive pulse TC=25C Rth(t) -- t (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink Thermal resistance Rth(t) (C/W) Collector current IC (A) 10 ICP 3 IC 1 300ms 0.3 0.1 0.03 0.01 1 3 10 30 t=10ms 102 (1) (2) 1ms 10 1 100 300 1000 10-1 10-4 10-3 10-2 10-1 1 10 102 103 104 Collector to emitter voltage VCE (V) Time t (s) 2 This datasheet has been download from: www..com Datasheets for electronics components. |
Price & Availability of 2SD1751
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |