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| APM3005N N-Channel Enhancement Mode MOSFET Features * * * * 30V / 80A , RDS(ON)= 4m(typ.) @ VGS= 10V RDS(ON)= 7m(typ.) @ VGS= 4.5V Super High Dense Advanced Cell Design for Extremely Low RDS(ON) Pin Description 1 2 3 Reliable and Rugged G D S TO-220, TO-252 and TO-263 Packages Top View of TO-220, TO-252 and TO-263 D Applications * Power Management in Desktop Computer or DC/DC Converters. G S Ordering and Marking Information APM 3005N H a n d lin g C o d e Tem p. Range Package Code N-Channel MOSFET Package Code F : T O -2 2 0 U : T O -2 5 2 G : T O -2 6 3 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 2 5 C H a n d lin g C o d e TU : Tube TR : Tape & Reel A P M 3005N : A P M 3005N XXXXX XXXXX - D a te C o d e Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25C unless otherwise noted) Rating 30 20 80 160 A V Unit Maximum Drain Current - Continuous Maximum Drain Current - Pulsed ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.3 - Jan., 2003 1 www.anpec.com.tw APM3005N Absolute Maximum Ratings (Cont.) Symbol PD Parameter Maximum Power Dissipation TA=25C TO-252 TO-263 TO-252 TA=100C TJ,TSTG RJA RJC TO-263 (TA = 25C unless otherwise noted) Rating 50 62.5 20 25 -55 to 150 50 60 2.5 2 Unit W W C C/W C/W Maximum Operating and Storage Junction Temperature Thermal Resistance - Junction to Ambient TO-252 TO-263 Thermal Resistance - Junction to Case TO-252 TO-263 * Surface Mounted on FR4 Board, t 10 sec. Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON)a VSDa b (TA = 25C unless otherwise noted) Test Condition APM3005N Min. Typ. Max. Unit Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage VGS=0V , IDS=250A VDS=24V , VGS=0V VDS=VGS , IDS=250A VGS=20V , VDS=0V VGS=10V , IDS=80A VGS=4.5V , IDS=70A ISD=30A , VGS=0V VDS=15V , IDS= 80A VGS=5V , 30 1 1 1.5 4 7 0.85 28 12.8 21.2 13 2 100 5.4 8 1.3 32 V A V nA m V Dynamic Qg Total Gate Charge Qgs Gate-Source Charge Qgd td(ON) Tr td(OFF) Tf Ciss Coss Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance nC 20 15 66 28 ns VDD=15V , IDS=1A , VGEN=10V , RG=0.2 VGS=0V 9 43 14 4700 930 280 VDS=15V Crss Reverse Transfer Capacitance Frequency=1.0MHz Notes a : Pulse test ; pulse width 300s, duty cycle 2% b : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.3 - Jan., 2003 2 pF www.anpec.com.tw APM3005N Typical Characteristics Output Characteristics 80 VGS=4,5,6,7,8,9,10V Transfer Characteristics 100 IDS-Drain Current (A) IDS-Drain Current (A) 60 80 60 40 VGS=3.5V 40 TJ=25C TJ=125C TJ=-55C 20 V GS=3V 20 0 0 1 2 3 4 5 0 0 1 2 3 4 5 6 VDS-Drain-to-Source Voltage (V) VGS-Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.4 IDS=250A On-Resistance vs. Drain Current 0.010 VGS(th)-Threshold Voltage (V) (Normalized) RDS(ON)-On-Resistance () 1.2 1.0 0.8 0.6 0.4 0.2 -50 0.008 V GS=4.5V 0.006 0.004 VGS=10V 0.002 -25 0 25 50 75 100 125 150 0.000 0 20 40 60 80 100 120 Tj-Junction Temperature (C) IDS-Drain Current (A) Copyright ANPEC Electronics Corp. Rev. A.3 - Jan., 2003 3 www.anpec.com.tw APM3005N Typical Characteristics (Cont.) On-Resistance vs. Gate-to-Source Voltage 0.025 IDS=60A On-Resistaence vs. Junction Temperature 10 VGS=10V IDS=60A RDS(ON)-On Resistance (m) (Normalized) RDS (ON)-On-Resistance () 0.020 8 0.015 6 0.010 4 0.005 2 0.000 0 2 4 6 8 10 0 -50 -25 0 25 50 75 100 125 150 VGS-Gate-to-Source Voltage (V) Tj-Junction Temperature (C) On-Resistaence vs. Junction Temperature 2.0 Gate Charge 10 VDS=15V IDS=80A VGS-Gate-to-Source Voltage (V) 0 25 50 75 100 125 150 RDS(ON)-On Resistance (m) VGS=10V 1.8 IDS=60A 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 8 6 4 2 0 0 10 20 30 40 50 60 70 80 90 Tj-Junction Temperature (C) QG-Total Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.3 - Jan., 2003 4 www.anpec.com.tw APM3005N Typical Characteristics (Cont.) Capacitance Characteristics 7000 Frequency=1MHz Source-Drain Diode Forward Voltage 100 6000 ISD-Source Current (A) C-Capacitance (pF) 5000 4000 3000 2000 Ciss 10 1 TJ=125C TJ=25C TJ=-55C Coss 1000 Crss 0 0 5 10 15 20 25 30 0.1 0.0 0.3 0.6 0.9 1.2 1.5 VDS-Drain-to-Source Voltage (V) VSD-Source-to-Drain Voltage (V) Single Pulse Power TO-252 Single Pulse Power TO-263 3000 2500 2000 1500 1000 500 0 -5 10 3000 2500 2000 1500 1000 500 0 -5 10 Power (W) 10 -4 10 -3 10 -2 10 -1 10 0 Power (W) 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Time (sec) Time (sec) Copyright ANPEC Electronics Corp. Rev. A.3 - Jan., 2003 5 www.anpec.com.tw APM3005N Typical Characteristics (Cont.) Normalized Transient Thermal Transient Impedence, Junction to Ambient TO-252 1 Normalized Effective Transient Thermal Impedance Duty Cycle=0.5 D=0.2 0 .1 D=0.1 D=0.05 D=0.02 D=0.01 SINGLE PULSE 1. Duty Cycle , D=t1/t2 2. Per Unit Base=RthJA=50C/W 3. TJM-TA=PDMZthJA 0 .0 1 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 Square Wave Pulse Duration (sec) Normalized Transient Thermal Transient Impedence, Junction to Ambient TO-263 1 Normalized Effective Transient Thermal Impedance Duty Cycle=0.5 D=0.2 0 .1 D=0.1 D=0.05 D=0.02 D=0.01 SINGLE PULSE 1. Duty Cycle , D=t1/t2 2. Per Unit Base=RthJA=62.5C/W 3. TJM-TA=PDMZthJA 0 .0 1 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.3 - Jan., 2003 6 www.anpec.com.tw APM3005N Package Information TO-220 ( Reference JEDEC Registration TO-220) D Q R b E e b1 e1 L1 H1 L A F c J1 Millimeters Dim A b1 b c D e e1 E F H1 J1 L L1 R Q Min. 3.56 1.14 0.51 0.31 14.23 2.29 4.83 9.65 0.51 5.84 2.03 12.7 3.65 3.53 2.54 Max. 4.83 1.78 1.14 1.14 16.51 2.79 5.33 10.67 1.40 6.86 2.92 14.73 6.35 4.09 3.43 Min. 0.140 0.045 0.020 0.012 0.560 0.090 0.190 0.380 0.020 0.230 0.080 0.500 0.143 0.139 0.100 Inches Max. 0.190 0.070 0.045 0.045 0.650 0.110 0.210 0.420 0.055 0.270 0.115 0.580 0.250 0.161 0.135 Copyright ANPEC Electronics Corp. Rev. A.3 - Jan., 2003 7 www.anpec.com.tw APM3005N Package Informaion (Cont.) TO-252( Reference JEDEC Registration TO-252) E b2 L2 A C1 D H L1 L b e1 C A1 Dim A A1 b b2 C C1 D E e1 H L L1 L2 Mi ll im et er s Min . 2. 1 8 0. 8 9 0. 5 08 5. 2 07 0. 4 6 0. 4 6 5. 3 34 6. 3 5 3. 9 6 9. 3 98 0. 5 1 0. 6 4 0. 8 9 1. 0 2 2. 0 32 8 Inc he s Ma x . 2. 3 9 1. 2 7 0. 8 9 5. 4 61 0. 5 8 0. 5 8 6. 2 2 6. 7 3 5. 1 8 10 . 41 Min . 0. 0 86 0. 0 35 0. 0 20 0. 2 05 0. 0 18 0. 0 18 0. 2 10 0. 2 50 0. 1 56 0. 3 70 0. 0 20 0. 0 25 0. 0 35 0. 0 40 0. 0 80 www.anpec.com.tw Ma x . 0. 0 94 0. 0 50 0. 0 35 0. 2 15 0. 0 23 0. 0 23 0. 2 45 0. 2 65 0. 2 04 0. 4 10 Copyright ANPEC Electronics Corp. Rev. A.3 - Jan., 2003 APM3005N Package Information (Cont.) TO-263 ( Reference JEDEC Registration TO-263) E L2 E1 TERMINAL 4 D L L3 D1 A c2 1 L4 R L1 DETAIL "A"ROTED c Millimeters Dim A b b2 c c2 D E L L1 L2 L3 Min. 4.06 0.51 1.14 0.38 TYP. 1.14 8.64 9.65 14.60 2.24 1.02 1.20 1.40 9.65 10.54 15.88 2.84 2.92 1.78 0.045 0.340 0.380 0.575 0.090 0.040 0.050 Max. 4.83 1.016 1.651 Min. 0.160 0.02 0.045 Inches Max. 0.190 0.040 0.065 0.015 TYP. 0.055 0.380 0.415 0.625 0.110 0.112 0.070 Copyright ANPEC Electronics Corp. Rev. A.3 - Jan., 2003 9 www.anpec.com.tw APM3005N Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition temperature (IR/Convection or VPR Reflow) Reference JEDEC Standard J-STD-020A APRIL 1999 Peak temperature 183C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection 3 C/second max. 120 seconds max. 60 ~ 150 seconds 10 ~ 20 seconds 220 +5/-0 C or 235 +5/-0 C 6 C /second max. 6 minutes max. VPR 10 C /second max. Average ramp-up rate(183 C to Peak) Preheat temperature 125 25 C) Temperature maintained above 183 C Time within 5 C of actual peak temperature Peak temperature range Ramp-down rate Time 25 C to peak temperature 60 seconds 215~ 219 C or 235 +5/-0 C 10 C /second max. Package Reflow Conditions pkg. thickness 2.5mm and all bags Convection 220 +5/-0 C VPR 215-219 C IR/Convection 220 +5/-0 C pkg. thickness < 2.5mm and pkg. volume 350 mm pkg. thickness < 2.5mm and pkg. volume < Convection 235 +5/-0 C VPR 235 +5/-0 C IR/Convection 235 +5/-0 C Copyright ANPEC Electronics Corp. Rev. A.3 - Jan., 2003 10 www.anpec.com.tw APM3005N Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles Carrier Tape & Reel Dimension t E Po P P1 D F W Bo Ao D1 T2 Ko J C A B T1 Application A 330 3 B 100 2 D 1.5 +0.1 B 80 2 D 1.5 +0.1 C 13 0. 5 D1 1.5 0.25 C 13 0. 5 D1 1.5 0.25 J 2 0.5 Po 4.0 0.1 J 2 0.5 Po 4.0 0.1 11 T1 16.4 + 0.3 -0.2 P1 2.0 0.1 T1 24 4 P1 T2 2.5 0.5 Ao 6.8 0.1 T2 2 0.3 Ao W 16+ 0.3 - 0.1 Bo 10.4 0.1 W 24 + 0.3 - 0.1 Bo P 8 0.1 Ko 2.5 0.1 P 16 0.1 Ko E 1.75 0.1 t 0.30.05 E 1.75 0.1 t TO-252 F 7.5 0.1 Application A 3803 TO-263 F 11.5 0.1 2.0 0.1 10.8 0.1 16.1 0.1 5.2 0.1 0.350.013 www.anpec.com.tw Copyright ANPEC Electronics Corp. Rev. A.3 - Jan., 2003 (mm) APM3005N Cover Tape Dimensions Application TO- 252 TO- 263 Carrier Width 16 24 Cover Tape Width 13.3 21.3 Devices Per Reel 2500 1000 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.3 - Jan., 2003 12 www.anpec.com.tw |
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