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| Low Saturation Voltage PNP Silicon Driver Transistors Part of the GreenLineTM Portfolio of devices with energy-conserving traits. This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy in general purpose driver applications. This device is housed in the SOT-23 and SC-59 packages which are designed for low power surface mount applications. * Low V CE(sat) , < 0.1 V at 50 mA Applications * LCD Backlight Driver * Annunciator Driver * General Output Device Driver MMBT1010LT1 MSD1010T1 PNP GENERAL PURPOSE DRIVER TRANSISTORS SURFACE MOUNT 3 1 2 MAXIMUM RATINGS (T A = 25C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -- Continuous Symbol V (BR)CBO V (BR)CEO V (BR)EBO IC Value 45 15 5.0 100 Unit Vdc Vdc Vdc mAdc CASE 318-08, STYLE 6 SOT- 23 3 THERMAL CHARACTERISTICS Characteristic Power Dissipation T A =25 C Derate above 25C Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Range Symbol P D (1) Max 250 1.8 R JA TJ T stg 1 2 Unit mW mW/C C/W C C CASE 318D -04, STYLE 1 SC- 59 556 150 -55 --+150 COLLECTOR DEVICE MARKING MMBT1010LT1 = GLP; MSD1010T1 = GLP BASE EMITTER ELECTRICAL CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Symbol V (BR)CEO V (BR)EBO I CBO I CEO h FE1 (2) V CE(sat)(2) Condition I C = 10 mA, I B = 0 I E = 10 A,I E = 0 V CB = 20 V, I E = 0 V CE = 10 V, I B = 0 V CE = 5 V,I C = 100 mA I C = 10 mA, I B = 1.0 mA I C = 50 mA, I B = 5.0 mA I C = 100 mA, I B = 10 mA I C = 100 mA, I B = 10 mA Min 15 5.0 -- -- 300 -- -- -- Max -- -- 0.1 100 600 0.1 0.1 0.19 1.1 Unit Vdc Vdc A A -- Vdc Base-Emitter Saturation Voltage V BE(sat)(2) Vdc (1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. (2) Pulse Test: Pulse Width <300 s, D.C <2%. O3-1/1 |
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