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PTF211802
LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz
Description
The PTF211802 is a 180 W, internally matched, laterally double-diffused, GOLDMOS push-pull FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.
Features
* * Broadband internal matching Typical two-carrier WCDMA performance - Average output power = 38 W - Gain = 15 dB - Efficiency = 25% - IM3 = -37 dBc - ACPR < -42 dBc Typical CW performance - Output power at P-1dB = 180 W - Efficiency = 50% Integrated ESD protection: Human Body Model, Class 1 (minimum) Excellent thermal stability Low HCI drift Capable of handling 10:1 VSWR @ 28 V, 180 W (CW) output power
Two-Carrier WCDMA Drive-Up
VDD = 28 V, IDQ = 2.0 A, f1 = 2140 MHz, f2 = 2150 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 3.84 MHz BW
35 -30
*
*
Efficiency (%), Gain (dB)
30 25 20 15 10 -35
IMD (dBc), ACPR (dB)
* * *
Gain
Drain Efficiency IM3
-40 -45 -50 -55
PTF211802A Package 20275
ACPR
5 35 37 39 41 43 45 47 -60
Output Power (dBm), Average
PTF211802E Package 30275
ESD: Electrostatic discharge sensitive device -- observe handling precautions!
RF Characteristics at TCASE = 25C unless otherwise indicated
WCDMA Measurements (not subject to production test--verified by design/characterization in Infineon test fixture) VDD = 28 V, IDQ = 2.0 A, POUT = 38 W AVG f1 = 2140 MHz, f2 = 2150 MHz, two-carrier 3GPP, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF Characteristic
Intermodulation Distortion Gain Drain Efficiency
Symbol
IM3 Gps D
Min
-- -- --
Typ
-37 15 25
Max
-- -- --
Units
dBc dB %
Two-Tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 2.0 A, POUT = 60 W PEP, f = 2110 MHz, tone spacing = 5 MHz
Characteristic
Gain Drain Efficiency Intermodulation Distortion Data Sheet 1
Symbol
Gps D IMD
Min
12.5 20 --
Typ
15 22 -40
Max
-- -- -38
Units
dB % dBc 2004-02-13
PTF211802
DC Characteristics at TCASE = 25C unless otherwise indicated
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current On-State Resistance Operating Gate Voltage Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 A/side VDS = 28 V, VGS = 0 V VGS = 10 V, VDS = 0.1 V VDS = 28 V, IDQ = 1.0 A/side VGS = 10 V, VDS = 0 V
Symbol
V(BR)DSS IDSS RDS(on) VGS IGSS
Min
65 -- -- 2.5 --
Typ
-- -- 0.1 3.2 --
Max
-- 1.0 -- 4 1.0
Units
V A V A
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation Above 25C derate by Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C, 130 W CW) PTF211802A PTF211802E PTF211802A PTF211802E
Symbol
VDSS VGS TJ PD PD TSTG RJC RJC
Value
65 -0.5 to +12 200 498 2.85 647 3.70 -40 to +150 0.35 0.27
Unit
V V C W W/C W W/C C C/W C/W
Typical Performance (data taken in a production test fixture)
Broadband Performance
VDD = 28 V, IDQ = 2.0 A, POUT = 38 W
40 0 Return Loss Efficiency
58 Ideal
Power Sweep, under Pulsed Conditions
VDD = 28 V, IDQ = 2.0 A, f = 2140 MHz, pulse period = 1 ms, 0.8% duty cycle
Gain (dB), Efficiency (%)
Input Return Loss (dB)
35 30 25 20 15 10 Gain
-5 -10 -15 -20 -25 -30
56
Output Power (dBm)
P-1dB = 52.8 dBm 54 52 Actual 50 48 46 30 32 34 36 38 40 42 44 P-3dB = 53.6 dBm
5 2080
2100
2120
2140
2160
2180
-35 2200
Frequency (MHz)
Input Power (dBm)
Data Sheet
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PTF211802
Typical Performance (cont.)
Intermodulation Distortion vs. Output Power for selected currents
VDD = 28 V, f = 2140 MHz, tone spacing = 5 MHz
-20
Intermodulation Distortion Products vs. Tone Spacing
VDD = 28 V, IDQ = 2.0 A, POUT (PEP) = 170 W, f = 2140 MHz
-20
Intermodulation Distortion (dBc)
Intermodulation Distortion (dBc)
-25 -30 -35 -40 -45 -50 -55 -60 -65 39 41 43 45 47 49 51 53 55 1.8 A 2.2 A 2.4 A 2.0 A 1.6 A
-25 -30 -35 -40 -45 -50 -55 -60 0 5 10 15 20
3rd Order
5th
7th
25
30
Output Power (dBm), PEP
Tone Spacing (MHz)
Two-Tone Drive-Up
VDD = 28 V, IDQ = 2.0 A, f = 2140 MHz, tone spacing = 5 MHz
45 40 -20
30
Single-Carrier WCDMA Drive-Up
V DD = 28 V, IDQ = 2.0 A, f = 2140 MHz, 3GPP WCDMA signal, Test Model 1 w /16 DPCH, 67% clipping, P/A R = 8.7 dB, 3.84 MHz BW -30 Drain Efficiency 25 -35
-25 Efficiency IM3 -30 -35 -40 IM5 -45 IM7 -50 -55 -60 42 44 46 48 50 52 54
Intermodulation Distortion (dBc)
35 30 25 20 15 10 5
Drain Efficiency (%), Gain (dB)
Drain Efficiency (%)
15 10 5 0
Gain
-45 ACPR -50 -55 -60
37
38
39
40
41
42 43
44 45
46
47
Output Power (dBm), PEP
Output Power (dBm), Avg.
Data Sheet
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2004-02-13
ACPR (dBc)
20
-40
PTF211802
Typical Performance (cont.)
IM3, Drain Efficiency and Gain vs. Supply Voltage
IDQ = 2.0 A, POUT (PEP) = 170 W, f = 2140 MHz, tone spacing = 5 MHz
45 -5
1.03
Bias Voltage vs. Case Temperature
Voltage normalized to typical gate voltage.
Series show current.
Drain Efficiency (%), Gain (dB)
Normalized Bias Voltage
40 35 30 25 20 15 10 5 0 22 24 26 28 30 32 34 Gain Drain Efficiency IM3
-10 -15
1.02 1.01 1.00 0.99 0.98 0.97 0.96 -20
3.00 A 6.00 A 9.00 A 12.00 A 15.00 A 18.00 A
-25 -30 -35 -40 -45 -50
IM3 (dBc)
-20
30
80
130
Drain Voltage (V)
Case Temperature (C)
Broadband Circuit Impedance Data
VDD = 28 V, IDQ = 1900 mA, POUT = 30 W AVG Two-Carrier WCDMA Z0 = 50
Z Source
D
Z Load
Z Load
2200 MHz
G G
S
0.1 0.2 0.3 0.4
2070 MHz
D
Frequency
MHz 2070 2110 2140 2170 2200 R
Z Source
jX -14.00 -13.48 -13.00 -12.60 -12.22 R 4.28 4.06 3.98 3.84 3.76 10.22 9.56 9.14 8.70 8.24
Z Load
jX 1.24 1.94 2.42 2.90 3.34
Z Source
2200 MHz 2070 MHz
Data Sheet
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PTF211802
Reference Circuit
VDD C1 .01F QQ1 LM7805 R2 1.3KV C2 .01F R1 1.2KV R3 2KV C3 .01 F Q1 BCP56 R4 10V R6 1KV
l13
R5 24KV R7 3KV C4 0.1 F C5 8.2pF R10 10V DUT
l17
C12 10pF
C13 1F
VDD C14 100F 50V
l7 l5 2
RF_IN C6 20pF
l9
l11
l15
l19
l 21 l23
C16 C15 12pF 0.6pF
l26 l25 2
l27
RF_OUT
l1
l2
C7 0.1pF
l3
l4
C8 1.2pF
l6
C9 20pF
l8
l10
l12
R11 10V
l16 l18
l20
C17 12pF
l22
l24
l14
C10 0.1F C11 8.2pF C18 10pF C19 1F
VDD C20 100 F 50V 211802_sch-e
Reference Circuit Schematic for 2140 MHz Circuit Assembly Information DUT PTF211802E Circuit board 0.76 mm [.030"] thick, r = 3.48 Microstrip l1 l2 l3 l4 l5 l6 l7, l8 l9, l10 l11, l12 l13, l14 l15, l16 l17, l18 l19, l20 l21, l22 l23, l24 l25 l26 l27 Electrical Characteristics at 2140 MHz 0.110 , 50.0 0.175 , 50.0 0.205 , 35.4 0.092 , 35.4 0.500 , 50.0 0.052 , 50.0 0.110 , 31.8 0.073 , 22.4 0.089 , 9.10 0.337 , 50.4 0.132 , 8.42 0.250 , 50.0 0.035 , 13.2 0.057 , 36.5 0.061 , 50.0 0.500 , 50.0 0.264 , 35.4 0.136 , 50.0
LDMOS transistor Rogers 4350, 2 oz. copper Dimensions: L x W (mm.) 9.40 x 1.70 14.78 x 1.70 16.99 x 2.84 7.57 x 2.84 42.67 x 1.70 4.39 x 1.70 9.04 x 3.30 5.84 x 5.26 6.86 x 15.09 28.58 x 1.70 10.01 x 16.33 21.26 x 1.70 2.74 x 9.96 4.70 x 2.72 5.21 x 1.70 42.67 x 1.70 21.79 x 2.84 11.51 x 1.70 Dimensions: L x W (in.) 0.370 x 0.067 0.582 x 0.067 0.669 x 0.112 0.298 x 0.112 1.680 x 0.067 0.173 x 0.067 0.356 x 0.130 0.230 x 0.207 0.270 x 0.594 1.125 x 0.067 0.394 x 0.643 0.837 x 0.067 0.108 x 0.392 0.185 x 0.107 0.205 x 0.067 1.680 x 0.067 0.858 x 0.112 0.453 x 0.067
Data Sheet
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PTF211802
Reference Circuit (cont.)
C3 R4 R6 R5 R3 C1 C2 R1 R2 R7 R10 C16 C6 C15 C17 211802 Rev 2 Q1 LM +28V C4 QQ1 C5 C12
V DD
C14 C13 OUTPUT
C9
C8 INPUT
R11
C19 C7 C11 C10 C18 C20
V DD
211802_assy
Reference Circuit1 (not to scale) Component C1, C2, C3 C4, C10 C5, C11 C6, C9 C7 C8 C12, C18 C13, C19 C14, C20 C15 C16, C17 QQ1 Q1 R1 R2 R3 R4, R10, R11 R5 R6 R7 Description Capacitor, 0.01 F 50 V Capacitor, 0.1 F, 50 V Capacitor, 8.2 pF Capacitor, 20 pF Capacitor, 0.1 pF Capacitor, 1.2 pF Capacitor, 10 pF Capacitor, 1 F, ceramic, 50 V Capacitor, 100 F, 50 V, electrolytic Capacitor, 0.6 pF Capacitor, 12 pF Voltage Regulator Transistor Resistor, 1.2 k, 1/10 W, 0603 Resistor, 1.3 k, 1/10 W, 0603 Resistor, variable 2 k, 4 W, 1206 Resistor, 10 , 1/4 W, 1206 Resistor, 24 k, 1/4 W, 1206 Resistor, 1 k, 1/4 W, 1206 Resistor, 3 k, 1/4 W, 1206 Manufacturer Digi-Key Digi-Key ATC ATC ATC ATC ATC ATC Digi-Key ATC ATC Digi-Key Infineon Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key P/N or Comment PCC1772CT-ND PCC104BCT-ND 100 B 8R2 100 A 200 100 B 0R1 100 B 1R2 100 B 100 920DC105KW100 P5182-ND 100 B 0R6 100 B 120 LM 7805 BCP56 P1.2KGCT-ND P1.3KGCT-ND 3224W-202ETR-ND P10KECT-ND P24KECT-ND P1.0KECT-ND P3.0KECT-ND
1Gerber Files for this circuit available on request.
Data Sheet
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PTF211802
Package Outline Specifications
Type PTF211802A PTF211802E Package Outline 20275 30275 Package Description Standard ceramic, flange Thermally enhanced, flange Marking PTF211802A PTF211802E
Package 30275 Package 20275
2X 455 X 1.19 [.047] 2X R 1.59 [.063]
D
16.610.51 [.654.020] +0.10 9.40 -0.15 +.004 [.370 ] -.006
D S
2X 3.18 [.125] +0.10 LID 9.14 -0.15 +.004 [.360 ] -.006
10.16 [.400]
4X 3.230.25 [.127.010]
G
G
4X 11.68 [.460] 35.56 [1.400]
31.240.28 [1.230.011]
1.63 [.064]
4.550.38 [.179.015] 0.038 [.0015] -A0.51 [.020] 2.18 [.086] SPH 41.15 [1.620]
ERA-H-30275-4-1-2304
Notes: Unless otherwise specified 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. Pins: D = drain, S = source, G = gate 4. Lead thickness: 0.13 +0.051/-0.025 [.005 +.002/-.001 ] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products
Data Sheet
7
2004-02-13
PTF211802 Confidential Revision History: Data Sheet Previous Version: Data Sheet, 2004-01-06 Page Subjects (major changes since last revision) 5, 6 Combine PTF211802A and PTF211802E onto this Data Sheet. Alter circuit configuration
2004-02-13
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GOLDMOS) USA or +1 408 776 0600 International
GOLDMOS(R) is a registered trademark of Infineon Technologies AG.
Edition 2004-02-13 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen, Germany (c) Infineon Technologies AG 2004. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
8
2004-02-13

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