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| SFH 213 SFH 213 FA Neu: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit New: Silicon PIN Photodiode with Very Short Switching Time SFH 213 SFH 213 FA Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet fur Anwendungen im Bereich von 400 nm bis 1100 nm (SFH 213) und bei 880 nm (SFH 213 FA) q Kurze Schaltzeit (typ. 5 ns) q 5 mm-Plastikbauform im LED-Gehause q Auch gegurtet lieferbar Anwendungen q Industrieelektronik q "Messen/Steuern/Regeln" q Schnelle Lichtschranken fur Gleich- und Features q Especially suitable for applications from 400 nm to 1100 nm (SFH 213) and of 880 nm (SFH 213 FA) q Short switching time (typ. 5 ns) q 5 mm LED plastic package q Also available on tape Applications q q q q Wechsellichtbetrieb q LWL Industrial electronics For control and drive circuits Photointerrupters Fiber optic transmission systems Typ Type SFH 213 SFH 213 FA Bestellnummer Ordering Code Q62702-P930 Q62702-P1671 Semiconductor Group 1 03.96 fexf6626 fex06626 SFH 213 SFH 213 FA Grenzwerte Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Lottemperatur (Lotstelle 2 mm vom Gehause entfernt bei Lotzeit t 3 s) Soldering temperature in 2 mm distance from case bottom (t 3 s) Sperrspannung Reverse voltage Verlustleistung Total power dissipation Symbol Symbol Top; Tstg TS Wert Value - 55 ... + 100 300 Einheit Unit C C VR Ptot 50 100 V mW Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Fotoempfindlichkeit Spectral sensitivity VR = 5 V, Normlicht/standard light A, T = 2856 K, VR = 5 V, = 870 nm, Ee = 1 mW/cm2 Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 10 % von Smax Spectral range of sensitivity S = 10 % of Smax Bestrahlungsempfindliche Flache Radiant sensitive area Abmessung der bestrahlungsempfindlichen Flache Dimensions of radiant sensitive area Abstand Chipoberflache zu Gehauseoberflache Distance chip front to case surface Symbol Symbol SFH 213 Wert Value SFH 213 FA Einheit Unit S S S max 135 ( 100) - 850 400 ...1100 - 90 ( 65) 900 750 ... 1100 nA/Ix A nm nm A LxB LxW H 1 1x1 1 1x1 mm2 mm x mm 5.1 ... 5.7 5.1 ... 5.7 mm Semiconductor Group 2 SFH 213 SFH 213 FA Kennwerte (TA = 25 C) Characteristics (cont'd) Bezeichnung Description Halbwinkel Half angle Dunkelstrom, VR = 20 V Dark current Spektrale Fotoempfindlichkeit, = 850 nm Spectral sensitivity Quantenausbeute, = 850 nm Quantum yield Leerlaufspannung Open-circuit voltage Ev = 1000 Ix, Normlicht/standard light A, T = 2856 K Ee = 0.5 mW/cm2, = 870 nm Kurzschlustrom Short-circuit current Ev = 1000 Ix, Normlicht/standard light A, T = 2856 K Ee = 0.5 mW/cm2, = 870 nm Anstiegs- und Abfallzeit des Fotostromes Rise and fall time of the photocurrent RL = 50 ; VR = 20 V; = 850 nm; Ip = 800 A Durchlaspannung, IF = 80 mA, E = 0 Forward voltage Kapazitat, VR = 0 V, f = 1 MHz, E = 0 Capacitance Temperaturkoeffizient von VO Temperature coefficient of VO Temperaturkoeffizient von ISC Temperature coefficient of ISC Normlicht/standard light A = 870 nm Rauschaquivalente Strahlungsleistung Noise equivalent power VR = 10 V, = 850 nm Nachweisgrenze, VR = 20 V, = 850 nm Detection limit Symbol Symbol SFH 213 IR S 10 1 ( 5) 0.62 0.89 Wert Value SFH 213 FA 10 1 ( 5) 0.59 0.86 Grad deg. nA A/W Electrons Photon Einheit Unit VO VO 430 ( 350) - - 380 ( 300) mV mV ISC ISC tr, tf 125 - 5 - 42 5 A A ns VF C0 TCV TCI 1.3 11 - 2.6 1.3 11 - 2.6 V pF mV/K %/K 0.18 - NEP - 0.2 W Hz cm * Hz W 2.9 x 10- 14 2.9 x 10- 14 D* 3.5 x 1012 3.5 x 1012 Semiconductor Group 3 SFH 213 SFH 213 FA Relative spectral sensitivity SFH 213 Srel = f () Relative spectral sensitivity SFH 213 FA Srel = f () Photocurrent IP = f (Ev), VR = 5 V Open-circuit voltage VO = f (Ev) SFH 213 Photocurrent IP = f (Ee), VR = 5 V Open-circuit voltage VO = f (Ee) SFH 213 FA Total power dissipation Ptot = f (TA) Dark current IR = f (VR), E = 0 Directional characteristics Srel = f () Semiconductor Group 4 |
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