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| SEMICONDUCTOR TECHNICAL DATA AC POWER CONTROL APPLICATION. T1A6C Bi-Directional Triode Thyristor 1A Mold TRIAC B C FEATURES R.M.S on-State Current : IT(RMS)=1A. High Commutation (dv/dt) K D E G N A Repetitive Peak Off-state Voltage : VDRM=600V. APPLICATIONS Switching Mode Power Supply Speed Control of Small Motors Solid State Relay Light Dimmer Temperature Control of Heater M F H F Washing Machine L 1 2 3 C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. T1 2. GATE 3. T2 TO-92 MAXIMUM RATINGS (Ta=25 ) SYMBOL VDSM VDRM IT(RMS) ITSM I2t PGM PG(AV) VGM IGM Tj RATING 700 600 1 9 (50Hz 1 Cycle) 10 (60Hz 1 Cycle) 0.4 1 0.1 6 0.5 -40 125 UNIT V V A A A2S W W V A CHARACTERISTIC Non-Repetitive Peak Off-state Voltage Repetitive Peak Off-state Voltage R.M.S On-state Current (Full Sine Waveform Tc=56 ) Peak One Cycle Surge On-state Current (Non-Repetitive) I2t Limit Value (1mS t 10mS) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Voltage Peak Gate Current Junction Temperature 2001. 5. 9 Revision No : 2 1/3 T1A6C ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Repetitive Peak Off-state Current SYMBOL IDRM TEST CONDITION VDRM=Rated T2(+), Gate(+) Gate Trigger Voltage VGT VD=12V, RL=20 Gate Trigger Current IGT T2(+), Gate(-) T2(-), Gate(-) T2(-), Gate(+) T2(+), Gate(+) T2(+), Gate(-) T2(-), Gate(-) T2(-), Gate(+) Peak On-State Voltage Gate Non-Trigger Voltage Holding Current Critical Rate of Rise of Off-state Voltage at Commutation Thermal Resistance VTM VGD IH (dV/dt)C Rth(j-c) Rth(j-a) ITM=1.5A VD=Rated, Tc=125 VD=12V, ITM=1A Tj=125 , (di/dt)C=-0.5A/mS, VD=2/3VDRM Junction to Case, AC Junction to Ambient, AC MIN. 0.2 2.0 TYP. MAX. 10 2.0 2.0 2.0 2.0 5.0 5.0 5.0 10 1.6 10 40 180 V V mA V/ S /W mA V UNIT A 2001. 5. 9 Revision No : 2 2/3 T1A6C GATE TRIGGER CHARACTERISTIC INSTANTANEOUS GATE VOLTAGE G (V) 10 INSTANTANEOUS ON-STATE CURRENT T (A) VGM =6V VGM P G(AV) =0.1W P GM =1W 5 3 T j =25 C T - T 5 -40 C V GT 3 25 C VGT -40 C I GT 25 C I GT 1 0.5 0.3 I GM 1 0.5 0.3 0.1 0.05 0.03 0.4 0.8 1.2 1.6 2.0 2.4 2.8 INSTANTANEOUS ON-STATE VOLTAGE T (V) VGD =0.2V 0.1 1 3 10 30 100 300 1K INSTANTANEOUS GATE CURRENT G (mA) PEAK SURGE ON-STATE CURRENT I TSM (A) SURGE ON-STATE CURRENT (NON-REPETITIVE) 10 AVERAGE ON-STATE POWER DISSIPATION P T(AV) (W) 8 6 4 2 0 1 3 5 10 30 50 100 NUMBER OF CYCLES AT 60Hz 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 P T(AV) - I T(RMS) 0.4 0.6 0.8 1.0 1.2 1.4 R.M.S ON-STATE CURRENT I T(RMS) (A) MAXIMUM ALLOWABLE CASE AMBIENT TEMPERATURE Tc MAX, Ta MAX ( C) Tc MAX, Ta MAX - I T(RMS) TRANSIENT THERMAL IMPEDANCE r th(j-c) , r th(j-a) ( C/W) 140 120 100 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 R.M.S ON-STATE CURRENT I T(RMS) (A) Ta MAX Tc MAX r th(j-c) , r th(j-a) - t 200 100 50 30 10 5 3 1 1 3 10 30 100 300 1k TIME t (ms and s) (ms) (s) (s) r th(j-a) r th(j-c) 2001. 5. 9 Revision No : 2 3/3 |
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