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| ZXT1053AK 75V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN D-PAK SUMMARY BVCEO = 75V : RSAT = 70m DESCRIPTION Packaged in the D-Pak outline this high current high gain 75V NPN transistor offers low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. typical; IC = 5A FEATURES * 5 amps continuous current * Up to 10 amps peak current * Low equivalent on resistance * Low saturation voltages * High hFE (300 min @ 1A) DPAK APPLICATIONS * DC - DC converters * DC - DC modules * Power switches * Motor control * Automotive circuits * Inverter circuits PINOUT ORDERING INFORMATION DEVICE ZXT1053AKTC REEL SIZE 13" TAPE WIDTH 16mm QUANTITY PER REEL 2500 units DEVICE MARKING * ZXT1053A TOP VIEW ISSUE 2 - DECEMBER 2003 1 SEMICONDUCTORS ZXT1053AK ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current (b) Peak pulse current Power dissipation at T A =25C (a) Linear derating factor Power dissipation at T A =25C (b) Linear derating factor Power dissipation at T A =25C (c) Linear derating factor Operating and storage temperature range SYMBOL BV CBO BV CEO BV EBO IC I CM PD PD PD T j , T stg LIMIT 150 75 7 5 10 2.1 16.8 3.4 27.4 4.4 9.3 -55 to +150 UNIT V V V A A W mW/C W mW/C W mW/C C THERMAL RESISTANCE PARAMETER Junction to ambient Junction to ambient Junction to ambient (a) (b) (c) SYMBOL R JA R JA R JA VALUE 59 36 28 UNIT C/W C/W C/W NOTES (a) (For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper in still air conditions. (b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper in still air conditions. (c) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper in still air conditions. ISSUE 2 - DECEMBER 2003 SEMICONDUCTORS 2 ZXT1053AK TYPICAL CHARACTERISTICS ISSUE 2 - DECEMBER 2003 3 SEMICONDUCTORS ZXT1053AK ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage SYMBOL BV CBO BV CES BV CEO BV CEV BV EBO I CBO I CES I EBO V CE(SAT) MIN. 150 150 75 150 7 TYP. 240 240 90 240 8.7 1 1 1 19 70 120 140 350 Base-emitter saturation voltage Base-emitter turn-on voltage Static forward current transfer ratio V BE(SAT) V BE(ON) H FE 260 300 50 10 Transition frequency Output capacitance Switching times fT C OBO t ON t OFF * Measured under pulsed conditions. Pulse width 1.0 0.925 375 450 75 25 140 21 162 900 300 s; duty cycle 2%. 30 1200 10 10 10 30 95 160 190 460 1.1 1.05 MAX. UNIT CONDITIONS V V V V V nA nA nA mV mV mV mV mV mV mV I C =100 A I C =100 A I C =10mA* I C =1 A, V EB =1V I E =100 A V CB =120V V CES =120V V EB =6V I C =0.2A, I B =20mA* IC=1A, IB=100mA* IC=1A, IB=10mA* IC=2A, IB=100mA* IC=5A, IB=200mA* I C =5A, I B =200mA* I C =5A, V CE =2V* I C =10mA, V CE =2V* IC=1A, VCE=2V* IC=5A, VCE=2V* IC=10A, VCE=2V* MHz I C =50mA, V CE =10V f=100MHz pF nS nS V CB =10V, f=1MHz* I C =2A, V CC =50V, I B1 =I B2 =20mA ISSUE 2 - DECEMBER 2003 SEMICONDUCTORS 4 ZXT1053AK TYPICAL CHARACTERISTICS ISSUE 2 - DECEMBER 2003 5 SEMICONDUCTORS ZXT1053AK PACKAGE OUTLINE Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS DIM A A1 b b2 b3 c c2 D D1 E E1 0.635 0.762 5.20 0.457 0.457 5.97 5.20 6.35 4.32 6.73 Millimeters Min 2.18 Max 2.38 0.127 0.89 1.114 5.46 0.609 0.584 6.22 0.025 0.030 0.205 0.018 0.018 0.235 0.205 0.250 0.170 0.265 Inches Min 0.086 Max 0.094 0.005 0.035 0.045 0.215 0.024 0.023 0.245 DIM e H L L1 L2 L3 L4 L5 1 Millimeters Min Max Inches Min Max 2.30 BSC 9.40 1.40 10.41 1.78 0.090 BSC 0.370 0.055 0.410 0.070 2.74 REF 0.051 BSC 0.89 0.635 1.14 0 0 1.27 1.01 1.52 10 15 0.108 REF 0.020 BSC 0.035 0.025 0.045 0 0 0.050 0.040 0.060 10 15 (c) Zetex plc 2003 Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - DECEMBER 2003 SEMICONDUCTORS 6 |
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