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| Power Transistors 2SA1535, 2SA1535A Silicon PNP epitaxial planar type For low-frequency driver and high power amplification Complementary to 2SC3944 and 2SC3944A Unit: mm 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 4.20.2 s Features q q q 14.00.5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SA1535 2SA1535A 2SA1535 VCEO VEBO ICP IC PC Tj Tstg Symbol VCBO (TC=25C) Ratings -150 -180 -150 -180 -5 -1.5 -1 15 2.0 150 -55 to +150 Unit V Solder Dip 4.0 Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics High transition frequency fT Makes up a complementary pair with 2SC3944 and 2SC3944A, which is optimum for the driver-stage of a 60 to 100W output amplifier. 16.70.3 7.50.2 emitter voltage 2SA1535A Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature V V A A W C C 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage 2SA1535 2SA1535 2SA1535A (TC=25C) Symbol ICBO VCEO VEBO hFE1* hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = -150V, IE = 0 IC = -1mA, IB = 0 IC = -100A, IB = 0 IE = -10A, IC = 0 VCE = -10V, IC = -150mA VCE = -5V, IC = -500mA IC = -500mA, IB = -50mA IC = -500mA, IB = -50mA VCE = -10V, IC = -50mA, f = 10MHz VCB = -10V, IE = 0, f = 1MHz -150 -180 -5 90 50 160 100 - 0.5 -1.0 200 30 50 -2.0 -2.0 V V MHz pF 220 min typ max -10 Unit A V V Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance *h FE1 Rank classification Q 90 to 155 R 130 to 220 Rank hFE1 1 Power Transistors PC -- Ta Collector to emitter saturation voltage VCE(sat) (V) 32 2SA1535, 2SA1535A VCE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) -3 IC/IB=10 -10 VBE(sat) -- IC IC/IB=10 Collector power dissipation PC (W) Without heat sink 28 24 20 16 12 8 4 0 0 20 40 60 80 100 120 140 160 -1 -3 TC=-25C 100C 25C -1 - 0.3 25C TC=100C -25C - 0.3 - 0.1 - 0.1 - 0.03 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 -1 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 Ambient temperature Ta (C) Collector current IC (A) Collector current IC (A) hFE -- IC 400 1000 VCE=-10V fT -- IE 100 VCB=-10V f=10MHz TC=25C 300 Cob -- VCB Collector output capacitance Cob (pF) IE=0 f=1MHz TC=25C 80 Forward current transfer ratio hFE 300 TC=-25C 100 100C 30 25C Transition frequency fT (MHz) 60 200 40 10 100 20 3 1 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 0 0.01 0.03 0.1 0.3 1 0 -1 -3 -10 -30 -100 Collector current IC (A) Emitter current IE (A) Collector to base voltage VCB (V) Area of safe operation (ASO) -10 -3 Single pulse TC=25C ICP t=1ms IC Collector current IC (A) -1 - 0.3 - 0.1 - 0.03 - 0.01 10ms - 0.003 - 0.001 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) 2 2SA1535A 2SA1535 t=<50s DC |
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