 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SK2393 Silicon N Channel MOS FET Application High voltage / High speed power switching TO-3PL Features * * * * * Low on-resistance, High breakdown voltage High speed switching Low Drive Current No Secondary Breakdown Suitable for Switching regulator, Motor Control 2 1 1 3 2 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 1500 20 8 20 8 200 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc = 25 C 2SK2393 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 1500 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0* VGS = 20 V, VDS = 0 VDS = 1200 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 4 A VGS = 15 V * ID = 4 A VDS = 20 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 4 A VGS = 10 V RL = 7.5 -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- -- 2.0 -- -- -- -- 1.9 1 500 4.0 2.8 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 1.8 3.0 -- S -------------------------------------------------------------------------------------- Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 4370 560 200 75 180 260 125 0.9 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 8 A, VGS = 0 IF = 8 A, VGS = 0, diF / dt = 100 A / s ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 6.5 -- s -------------------------------------------------------------------------------------- 2SK2393 Power vs. Temperature Derating 400 Pch (W) I D (A) 100 30 10 3 Maximum Safe Operation Area 300 10 DC 10 0 s Channel Dissipation Drain Current PW Op era 200 =1 1m 0m Tc s s ho Operation in 1 this area is limited by R DS(on) tio n( s( 1s 100 =2 5 t) 0.3 C) 0 50 100 150 Tc (C) 200 Case Temperature 0.1 Ta = 25 C 20 50 100 200 500 1000 2000 Drain to Source Voltage V DS (V) Typical Output Characteristics 10 Pulse Test I D (A) (A) 8 15 V 10 V 8V 6 7V 4 5 Typical Transfer Characteristics V DS = 10 V Pulse Test ID Drain Current 3 Drain Current 4 6V 2 VGS = 5 V 0 10 20 30 Drain to Source Voltage 40 50 V DS (V) 2 Tc = 75C 25C -25C 1 0 2 4 6 Gate to Source Voltage 8 10 V GS (V) 2SK2393 Drain to Source Saturation Voltage vs. Gate to Source Voltage V DS(on) (V) Pulse Test Drain to Source On State Resistance R DS(on) ( ) 20 Static Drain to Source on State Resistance vs. Drain Current 20 Pulse Test 10 5 VGS = 10 V 15 V 1 0.5 0.2 0.1 16 Drain to Source Voltage 12 ID=5A 8 2A 1A 0 4 8 12 Gate to Source Voltage 16 V GS (V) 20 2 4 0.3 1 3 Drain Current 10 30 I D (A) 100 Static Drain to Source on State Resistance R DS(on) ( ) Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 5 ID=5A Pulse Test 4 2A 1A 3 V GS = 15 V Forward Transfer Admittance vs. Drain Current 10 5 Tc = -25 C 2 25 C 1 0.5 75 C 2 1 0.2 0.1 0.1 V DS = 20 V Pulse Test 0.2 0.5 1 2 5 10 0 -40 0 40 80 120 160 Case Temperature Tc (C) Drain Current I D (A) 2SK2393 Body-Drain Diode Reverse Recovery Time 500 Reverse Recovery Time trr (ns) Capacitance C (pF) Typical Capacitance vs. Drain to Source Voltage 10000 Ciss 200 100 50 20 10 5 0.1 di/dt = 100 A/s V GS = 0, Ta = 25C 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) 3000 1000 Coss 300 100 30 10 0 Crss VGS = 0 f = 1 MHz 10 20 30 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) ID=8A 800 V GS (V) 1000 20 2000 1000 Switching Time t (ns) 500 Switching Characteristics V GS = 10 V, V DD = 30 V PW = 5 s, duty < 1 % t d(off) tf tr t d(on) 16 VDS V DD = 250 V 400 V 600 V Drain to Source Voltage 600 VGS 12 Gate to Source Voltage 200 100 50 400 8 200 V DD = 250 V 400 V 600 V 80 40 120 160 Gate Charge Qg (nc) 4 0 200 0 20 0.1 0.2 0.5 1 Drain Current 2 5 I D (A) 10 2SK2393 Reverse Drain Current vs. Souece to Drain Voltage 10 Reverse Drain Current I DR (A) Pulse Test 10 V 5V 8 6 V GS = 0, -5 V 4 2 0 0.2 0.4 0.6 0.8 V SD (V) 1.0 Source to Drain Voltage Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr |
Price & Availability of 2SK2393
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |