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Previous Datasheet Index Next Data Sheet PD - 9.1024 IRGPC50M INSULATED GATE BIPOLAR TRANSISTOR Features * Short circuit rated - 10s @ 125C, V GE = 15V * Switching-loss rating includes all "tail" losses * Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve C Short Circuit Rated Fast IGBT VCES = 600V G E VCE(sat) 2.2V @VGE = 15V, I C = 35A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ T C = 25C IC @ T C = 100C ICM ILM tsc VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 600 60 35 120 120 10 20 20 200 78 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Units V A s V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. -- -- -- -- Typ. -- 0.24 -- 6 (0.21) Max. 0.64 -- 40 -- Units C/W g (oz) Revision 1 C-329 To Order Previous Datasheet Index Next Data Sheet IRGPC50M Electrical Characteristics @ T = 25C (unless otherwise specified) J V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ gfe ICES IGES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Min. Typ. Max. Units Conditions 600 -- -- V VGE = 0V, I C = 250A 20 -- -- V VGE = 0V, IC = 1.0A -- 0.62 -- V/C VGE = 0V, I C = 1.0mA -- 1.8 2.2 IC = 35A V GE = 15V -- 2.3 -- V IC = 60A See Fig. 2, 5 -- 2.0 -- IC = 35A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -14 -- mV/C VCE = VGE, IC = 250A 11 20 -- S VCE = 100V, I C = 35A -- -- 250 A VGE = 0V, V CE = 600V -- -- 2000 VGE = 0V, V CE = 600V, T J = 150C -- -- 100 nA VGE = 20V Switching Characteristics @ T = 25C (unless otherwise specified) J Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC=80%(V CES), VGE=20V, L=10H, R G= 5.0, ( See fig. 13a ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- 10 -- -- -- -- -- -- -- -- -- Typ. 120 25 40 35 33 260 170 1.1 2.4 3.5 -- 35 32 460 320 6.5 13 2900 230 30 Max. Units Conditions 180 IC = 35A 38 nC VCC = 400V See Fig. 8 60 VGE = 15V -- TJ = 25C -- ns IC = 35A, V CC = 480V 400 VGE = 15V, R G = 5.0 260 Energy losses include "tail" -- -- mJ See Fig. 9, 10, 11, 14 5.3 -- s VCC = 360V, T J = 125C VGE = 15V, R G = 5.0, VCPK < 500V -- TJ = 150C, -- ns IC = 35A, V CC = 480V -- VGE = 15V, R G = 5.0 -- Energy losses include "tail" -- mJ See Fig. 10, 14 -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz C-330 To Order Previous Datasheet Index Next Data Sheet IRGPC50M 80 Fo r both: Tria ngu lar w av e: LO A D C U R RE NT (A ) 60 D uty c yc le: 50% T J = 125 C T s in k = 90C G ate d riv e as s pec ified Po w er D issip ation = 40W S quare w ave: C lam p voltage: 80% of ra ted 40 60% of rated voltage 20 Ideal diodes 0 0.1 1 10 100 f, F re quency (kH z) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK) 1000 10 00 I C , Co llector-to-E m itter C urrent (A) 100 IC , C ollector-to-E m itte r C urrent (A ) 2 5 C 1 50C 1 00 15 0C 2 5C 10 10 1 0.1 1 V GE = 15 V 2 0 s P U L S E W ID T H 10 1 5 10 V CC = 1 0 0V 5 s P U L S E W ID TH 15 20 V C E , C olle ctor-to-Em itter Voltage (V ) V G E , G a te-to-E m itter V o ltage (V ) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics C-331 To Order Previous Datasheet Index Next Data Sheet IRGPC50M 60 V GE = 1 5 V 3.5 V C E , Co llector-to-E m itter V oltag e (V) V GE = 1 5V 8 0 s P U L S E W ID TH M axim um D C C ollector Current (A ) 50 I C = 7 0A 3.0 40 2.5 30 2.0 I C = 3 5A 20 1.5 IC = 17A 10 0 25 50 75 100 125 150 1.0 -60 -4 0 -20 0 20 40 60 80 100 120 140 160 T C , C ase Tem perature (C ) TC , C ase Tem pe rature (C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature 1 T h e rm a l R e s p o n s e (Z thJ C ) D = 0 .5 0 0 .2 0 0.1 0 .1 0 0 .0 5 S IN G L E P U L S E (T H E R M A L R E S P O N S E ) N o te s : 1 . D u ty fa c to r D = t 1 /t 2 PD M t 1 t2 0 .0 2 0 .0 1 0.01 0.00001 2 . P e a k T J = P D M x Z thJ C + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , R e c ta n gu la r P u ls e D ura tio n (s e c ) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-332 To Order Previous Datasheet Index Next Data Sheet IRGPC50M 6 0 00 5 0 00 V G E , G ate-to-E m itter Voltag e (V) 100 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 20 V CE = 4 00 V I C = 3 5A 16 C , C a pa citan ce (pF ) Cies 4 0 00 Coes 3 0 00 12 8 2 0 00 Cres 1 0 00 4 0 1 10 0 0 30 60 90 1 20 V C E , C ollector-to-Em itter V oltage (V ) Q G , Total G ate C harge (nC ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 4 .6 100 T otal S w itching Los ses (m J) T otal Sw itc hing Losses (m J) 4 .4 V CC V GE TC IC = 4 80 V = 1 5V = 25 C = 35A RG = 5 V GE = 1 5V V CC = 4 80 V I C = 70 A 4 .2 10 I C = 35 A 4 .0 3 .8 1 I C = 1 7A 3 .6 3 .4 0 10 20 30 40 50 60 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 R G , G ate R esistanc e ( ) W TC , C ase Tem perature (C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-333 To Order Previous Datasheet Index Next Data Sheet IRGPC50M 20 16 I , C ollector-to-E m itter C urrent (A ) T otal S w itc hing Losses (m J) RG = 5 T C = 1 50 C V CC = 4 80 V V GE = 1 5V 1000 V GEE 2 0V G= T J = 1 2 5C 100 12 S A F E O P E R A T IN G A R E A 8 10 4 C 1 1 0 0 20 40 60 80 10 100 10 00 I C , C olle ctor-to-Em itter C urren t (A ) V C E , C o llector-to -E m itter V olta ge (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Refer to Section D for the following: Appendix C: Section D - page D-5 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 3 - JEDEC Outline TO-247AC Section D - page D-13 C-334 To Order |
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