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| 2SK1094 Silicon N-Channel MOS FET Application TO-220FM High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device - Can be driven from 5 V source * Suitable for motor drive, DC-DC converter, power switch and solenoid drive * * * * 2 12 3 1 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 60 20 15 60 15 25 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at TC = 25 C 2SK1094 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 60 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 50 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 8 A, VGS = 10 V * -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- 1.0 -- -- -- -- 0.055 0.075 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time * Pulse Test See characteristic curves of 2SK971. |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 7 -- -- -- -- -- -- -- -- 12 860 450 140 10 70 180 120 1.3 10 250 2.0 0.065 0.095 -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V IF = 15 A, VGS = 0 IF = 15 A, VGS = 0, diF/dt = 50 A/s ID = 8 A, VGS = 10 V, RL = 3.75 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------- --------------------- ID = 8 A, VGS = 4 V * ID = 8 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 135 -- ns -------------------------------------------------------------------------------------- 2SK1094 Power vs. Temperature Derating 30 100 Maximum Safe Operation Area Channel Dissipation Pch (W) 30 Drain Current ID (A) 20 10 3 1.0 0.3 0.1 0 50 100 Case Temperature TC (C) 150 1 is th in ted ni io m at li n) er a is S (o p O are R D by 10 PW D C O pe 10 = 1 s 0 10 m s m s s ra tio (1 = n Sh 10 (T ot ) C 25 C ) Ta = 25C 0.3 1.0 3 10 30 100 Drain to Source Voltage VDS (V) Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.1 0.2 0.1 TC = 25C 1.0 0.05 0.02 0.01 0.03 0.01 10 ho 1S t Pu lse ch-c(t) = S(t) * ch-c ch-c = 5.0C/W, TC=25C PDM D = PW T PW T 1m 10 m Pulse Width PW (s) 100 m 1 10 100 |
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