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BFR 92P
NPN Silicon RF Transistor * For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA * Complementary type: BFT92 (PNP) * CECC-type available: CECC 50002/249
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 92P GFs Q62702-F1050 1=B 2=E 3=C
Package SOT-23
Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 15 20 20 2.5 30 4 mW 280 150 - 65 ... + 150 - 65 ... + 150 365 C mA Unit V
VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
1)
TS 48 C
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point
RthJS
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Dec-12-1996
BFR 92P
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
15 100 -
V A 10 nA 100 A 100 40 200
IC = 1 mA, IB = 0
Collector-emitter cutoff current
ICES ICBO IEBO hFE
VCE = 20 V, VBE = 0
Collector-base cutoff current
VCB = 10 V, IE = 0
Emitter-base cutoff current
VEB = 2.5 V, IC = 0
DC current gain
IC = 15 mA, VCE = 8 V
Semiconductor Group
2
Dec-12-1996
BFR 92P
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit
fT
3.5 5 0.38 0.2 0.7 -
GHz pF 0.6 dB 1.8 2.9 -
IC = 15 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
Ccb Cce
-
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
VCE = 10 V, f = 1 MHz
Emitter-base capacitance
Ceb
-
VEB = 0.5 V, f = 1 MHz
Noise figure
F
IC = 2 mA, VCE = 6 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz
Power gain
2)
Gma
IC = 15 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz
Transducer gain |S21e|2 12.5 7 15 9.5 -
IC = 15 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz
2) Gma = |S21/S12| (k-(k2-1)1/2)
Semiconductor Group
3
Dec-12-1996
BFR 92P
SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 0.1213 fA VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 30 1.9052 14.599 1.371 7.8145 10.416 26.796 4.4601 0.84079 1.2744 0 3 V V fF ps mA V ns -
BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC =
94.733 0.46227 10.729 0.01 14.998 0.29088 0.70618 0.3817 0 0.4085 0 0 0.99545
A A V deg fF -
NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM
1.0947 129.55 0.8983 0.75557 0.01652 0.13793 0.34686 0.32861 946.47 0.13464 0.75 1.11 300
fA fA mA V fF V eV K
All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut fur Mobil-und Satellitenfunktechnik (IMST) (c) 1996 SIEMENS AG
Package Equivalent Circuit: LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = 0.85 0.51 0.69 0.61 0 0.49 73 84 165 nH nH nH nH nH nH fF fF fF
Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group
4
Dec-12-1996
BFR 92P
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
300
mW
Ptot
200
TS
150
TA
100
50
0 0 20 40 60 80 100 120 C 150 TA ,TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 3
10 2
RthJS
K/W
Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
10 1
10 1 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10 s 10 tp
-1
0
10 0 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10 s 10 tp
-1
0
Semiconductor Group
5
Dec-12-1996
BFR 92P
Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz
Transition frequency fT = f (IC)
VCE = Parameter
0.9 pF
6.0 GHz 5.0
Ccb
0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 4 8 12 16 V VR 22
fT
4.5 4.0 3.5 3.0 2V 2.5 2.0 1.5 1V 1.0 0.7V 0.5 0.0 0 5 10 15 20 25 mA IC 35 5V 3V
Power Gain Gma, Gms = f(IC)
f = 0.9GHz VCE = Parameter
18 dB
Power Gain Gma, Gms = f(IC)
f = 1.8GHz VCE = Parameter
10 dB 10V 5V 3V 2V 8 10V 5V 3V
G
14 12 10 8 6 4
G
7 6 5 4 3 2 1 0
2V
2 0 -2 -4 0 5 10 15 20 25
1V
-1 -2 -3 1V
0.7V mA IC 35
-4 -5 0
5
10
15
20
25
0.7V mA 35 IC
Semiconductor Group
6
Dec-12-1996
BFR 92P
Power Gain Gma, Gms = f(VCE):_____
|S21 |2 = f(VCE):---------
Intermodulation Intercept Point IP3=f(IC)
(3rd order, Output, ZS=ZL=50)
f = Parameter
16
VCE = Parameter, f = 900MHz
26
IC=15mA
dB
0.9GHz
dBm 5V
8V
G
12
0.9GHz
IP3
22 20 3V
10 1.8GHz 8 1.8GHz 6
18 2V 16 14 12
4 10 2 0 0 2 4 6 8 V 12 8 6 0 4 8 12 16 20 1V
V CE
mA IC
28
Power Gain Gma, Gms = f(f)
VCE = Parameter
32
Power Gain |S21|2= f(f)
VCE = Parameter
28
IC=15mA
dB
dB 24
IC=15mA
G
24
S21
22 20 18
20
16 14 12
16
12
10 8
8
6 10V 4 2 1V 0.7V GHz 3.5 f 0 -2 0.0 1V 0.7V GHz 3.5 f 10V
4 0 0.0
0.5
1.0
1.5
2.0
2.5
0.5
1.0
1.5
2.0
2.5
Semiconductor Group
7
Dec-12-1996

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