 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| March 2003 FDS4780 FDS4780 40V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features * 10.8 A, 40 V. RDS(ON) = 10.5 m @ VGS = 10 V * Low gate charge (30 nC) * High performance trench technology for extremely low RDS(ON) * High power and current handling capability Applications * DC/DC converter D D SO-8 D D DD D D 5 6 7 4 3 2 1 Pin 1 SO-8 G SG S S SS S TA=25oC unless otherwise noted 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings 40 20 (Note 1a) Units V V A W 10.8 45 2.5 1.4 1.2 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJA RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) 50 125 25 C/W C/W C/W Package Marking and Ordering Information Device Marking FDS4780 Device FDS4780 Reel Size 13'' Tape width 11mm Quantity 2500 units 2003 Fairchild Semiconductor Corporation FDS4780 Rev B (W) FDS4780 Electrical Characteristics Symbol EAS IAS BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on) ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd TA = 25C unless otherwise noted Parameter Drain-Source Avalanche Energy Drain-Source Avalanche Current Test Conditions Single Pulse, VDD=20V, ID=10.8A Min Typ Max Units 240 10.8 mJ A Drain-Source Avalanche Ratings (Note 2) Off Characteristics Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 32 V, VGS = 20 V, VGS = 0 V VDS = 0 V 40 42 1 100 -100 V mV/C A nA nA VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 10 V, ID = 10.8 A VGS = 10 V,ID = 10.8 A, TJ=115C VGS = 10 V, VDS = 10 V, VDS = 5 V ID = 10.8 A 22 36 2 3.9 -8 8 13 On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance 5 V mV/C 10.5 21 m A S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 20 V, f = 1.0 MHz V GS = 0 V, 1686 384 185 pF pF pF Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 20 V, VGS = 10 V, ID = 1 A, RGEN = 6 11 9 30 15 22 18 48 27 40 ns ns ns ns nC nC nC VDS = 20 V, VGS = 10 V ID = 10.8 A, 30 9 10 FDS4780 Rev B (W) FDS4780 Electrical Characteristics Symbol IS VSD trr Qrr TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units 2.1 A V nS nC Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward (Note 2) VGS = 0 V, IS = 2.1 A Voltage Diode Reverse Recovery Time IF = 10.8 A, diF/dt = 100 A/s Diode Reverse Recovery Charge 0.7 27 58 1.2 Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50C/W when 2 mounted on a 1in pad of 2 oz copper b) 105C/W when 2 mounted on a .04 in pad of 2 oz copper c) 125C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDS4780 Rev B (W) FDS4780 Typical Characteristics 80 70 ID, DRAIN CURRENT (A) 60 50 VGS = 10V 6.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 5.5V VGS = 5.0V 1.8 1.6 5.0V 40 30 20 10 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5.5V 1.4 6.0V 1.2 1 0.8 0 20 40 ID, DRAIN CURRENT (A) 60 80 4.5V 7.0V 8.0V 10V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.025 RDS(ON), ON-RESISTANCE (OHM) 2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC) ID = 10.8A VGS = 10V ID = 5.4A 0.022 0.019 TA = 125oC 0.016 0.013 0.01 TA = 25oC 0.007 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature. 80 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) 60 TA = -55oC 25oC 125 C o VGS = 0V 10 TA = 125oC 1 0.1 0.01 0.001 0.0001 25oC -55oC 40 20 0 2 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS4780 Rev B (W) FDS4780 Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 10.8 A 8 VDS = 10V 20V CAPACITANCE (pF) 2400 2000 30V 6 f = 1 MHz VGS = 0 V CISS 1600 1200 800 4 2 400 COSS 0 0 5 10 15 20 25 30 35 Qg, GATE CHARGE (nC) CRSS 0 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 1ms 10ms 100ms 1s 1 VGS = 10V SINGLE PULSE RJA = 125oC/W TA = 25oC 0.01 0.01 10s DC P(pk), PEAK TRANSIENT POWER (W) 50 Figure 8. Capacitance Characteristics. 100s ID, DRAIN CURRENT (A) RDS(ON) LIMIT 10 40 SINGLE PULSE RJA = 125C/W TA = 25C 30 20 0.1 10 0.1 1 10 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA = 125 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 o 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS4780 Rev B (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTa CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop DISCLAIMER ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogica TruTranslation UHC UltraFETa VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I2 |
Price & Availability of FDS4780
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |