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FPN660/FPN660A FPN660/FPN660A PNP Low Saturation Transistor * These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0A continuous. * Sourced from process PA. C BE TO-226 Absolute Maximum Ratings TA=25C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range FPN660 60 80 5 3 -55 ~ +150 FPN660A 60 60 5 3 -55 ~ +150 Units V V V A C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltage (V) and currents (A) are negative polarity for PNP transistors Electrical Characteristics TA=25C unless otherwise noted Symbol Off Characteristics BVCEO BVCBO BVEBO ICBO IEBO hFE Parameter Test Conditions IC = 10mA, IB = 0 IE = 100A, IE = 0 IE = 100A, IC = 0 VCB = 30V, IE = 0 VCB = 30V, IE = 0, TA = 100C VEB = 4.0V, IC = 0 IC = 100mA, VCE = 2.0V IC = 500mA, VCE = 2.0V IC = 1.0A, VCE = 2.0V IC = 2.0A, VCE = 2.0V VCE(sat) Collector-Emitter Saturation Voltage IC = 1.0A, IB = 100mA IC = 2.0A, IB = 200mA IC = 1.0A, IB = 100mA IC = 1.0A, VCE = 2.0V VCB = 10V, IE = 0, f = 1MHz IC = 100mA, VCE = 5.0V, f = 100MHz 75 FPN660 FPN660A 70 100 250 80 40 FPN660 FPN660A Min. 55 80 60 5.0 100 10 100 Typ. Max. Units V V V V nA A nA Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current DC Current Gain On Characteristics * FPN660 FPN660A 300 550 300 450 400 1.25 1.0 45 mV mV mV V V pF MHz VBE(sat) VBE(on) Cobo fT Base-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance Transition Frequency Small Signal Characteristics * Pulse Test: Pulse Width 300s, Duty Cycle 2.0% NOTE: All voltage (V) and currents (A) are negative polarity for PNP transistors. (c)2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 FPN660/FPN660A Thermal Characteristics TA=25C unless otherwise noted Symbol PD RJC RJA Parameter Total Device Dissipation Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. FPN660/FPN660A 1 50 125 Units W C/W C/W (c)2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 FPN660/FPN660A Typical Characteristics V -BASE-EMITTER SATURATION VOLTAGE(V) BESAT = 10 1.4 1.2 = 10 VBEON- BASE-EMITTER ON VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current = 10 = 10 Base-Emitter On Voltage vs. Collector Current 1.6 1.4 1.2 1 - 40C Vce = 2.0V = 10 = 10 1 - 40C 0.8 0.6 0.4 0.2 0.001 25C 125C 0.8 0.6 0.4 125C 25C 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10 0.2 0.0001 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10 Figure 1. Base-Emitter Saturation Voltage vs Collector Current VCESAT - COLLECTOR-EMITTER VOLTAGE (V) = 10 Figure 2. Base-Emitter On Voltag vs Collector Current Collector-Emitter Saturation Voltage vs Collector Current 400 350 CAPACITANCE (pf) 125C 25C 0.8 = 10 = 10 = 10 = 10 Input/Output Capacitance vs. Reverse Bias Voltage f Vce = 2.0V = 1.0MHz Cobo 0.7= 10 0.6 0.5 0.4 0.3 300 250 200 150 100 50 C ibo - 40C 0.2 0.1 0 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10 0 0.1 0.5 1 10 20 V CE - COLLECTOR VOLTAGE (V) 50 100 Figure 3. Collector-Emitter Saturation Voltage vs Collector Current Figure 4. Input/Output Capacitance vs Reverse Bias Voltage Current Gain vs. Collector Current 1000 900 H FE - CURRENT GAIN 800 700 600 500 400 300 200 100 0 0.0001 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10 - 40C 25C 125C Vce = 2.0V Ambient Temperature PD - POWER DIS SIPATION (W) 1 TO-226 0.75 0.5 0.25 0 0 25 50 75 100 TEMPERATURE ( C) 125 150 Figure 5. Current Gain vs Collector Current Figure 6. Power Dissipation vs Ambient Temperature (c)2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 FPN660/FPN660A Package Dimensions TO-226 S4.70-4.32; S1.52-1.02; 2" TYP S7.87-7.37; S7.73-7.10; S1.65-1.27; 2" TYP 0.51 S0.760.36; S15.61-14.47; S0.51-0.36; S0.48-0.30; S1.401.14; S1.40-1.14; PIN 99 E B C 95 E C B S4.45-3.81; 1 5" TYP 2 3 1 2 3 TO-226AE (95,99) S2.41-2.13; For leadformed option ordering, refer to Tape & Reel data information. Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. A2, November 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2002 Fairchild Semiconductor Corporation Rev. I1 |
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