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DATA SHEET
MICRONAS
HAL573...576, HAL581, 584 Two-Wire Hall Effect Sensor Family
Edition Nov. 27, 2003 6251-538-2DS
MICRONAS
HAL57x, HAL58x
Contents Page 3 3 3 4 4 4 5 5 6 7 7 12 12 12 12 13 14 15 18 18 20 22 24 26 28 30 30 30 30 31 31 32 Section 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. 2. 3. 3.1. 3.2. 3.3. 3.4. 3.4.1. 3.5. 3.6. 3.7. 4. 4.1. 4.2. 4.3. 4.4. 4.5. 4.6. 5. 5.1. 5.2. 5.3. 5.4. 5.5. 6. Title Introduction Features Family Overview Marking Code Special Marking of Prototype Parts Operating Junction Temperature Range Hall Sensor Package Codes Solderability Functional Description Specifications Outline Dimensions Dimensions of Sensitive Area Positions of Sensitive Areas Absolute Maximum Ratings Storage and Shelf Life Recommended Operating Conditions Characteristics Magnetic Characteristics Overview Type Descriptions HAL573 HAL574 HAL575 HAL576 HAL581 HAL584 Application Notes Application Circuit Extended Operating Conditions Start-up Behavior Ambient Temperature EMC and ESD Data Sheet History
DATA SHEET
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Micronas
DATA SHEET
HAL57x, HAL58x
- ideal sensor for applications in extreme automotive and industrial environments - EMC corresponding to DIN 40839 1.2. Family Overview
Two-Wire Hall Effect Sensor Family in CMOS technology Release Notes: Revision bars indicate significant changes to the previous edition. 1. Introduction This sensor family consists of different two-wire Hall switches produced in CMOS technology. All sensors change the current consumption depending on the external magnetic field and require only two wires between sensor and evaluation circuit. The sensors of this family differ in the magnetic switching behavior and switching points. The sensors include a temperature-compensated Hall plate with active offset compensation, a comparator, and a current source. The comparator compares the actual magnetic flux through the Hall plate (Hall voltage) with the fixed reference values (switching points). Accordingly, the current source is switched on (high current consumption) or off (low current consumption). The active offset compensation leads to constant magnetic characteristics in the full supply voltage and temperature range. In addition, the magnetic parameters are robust against mechanical stress effects. The sensors are designed for industrial and automotive applications and operate with supply voltages from 3.75 V to 24 V in the junction temperature range from -40 C up to 140 C. All sensors are available in the SMD package SOT89B-1 and in the leaded versions TO92UA-1 and TO92UA-2. 1.1. Features: - current output for two-wire applications - low current consumption: 5 mA ... 6.9 mA - high current consumption: 12 mA ... 17 mA - junction temperature range from -40 C up to 140 C. - operates from 3.75 V to 24 V supply voltage - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz - switching offset compensation at typically 145 kHz - overvoltage and reverse-voltage protection - magnetic characteristics are robust against mechanical stress effects - constant magnetic switching points over a wide supply voltage range - the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the magnetic characteristics
Type 573 574 575 576 581 584
Switching Behavior unipolar unipolar latching unipolar unipolar inverted unipolar inverted
Sensitivity low medium medium medium medium medium
see Page 18 20 22 24 26 28
Unipolar Switching Sensors: The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low consumption if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. Current consumption IDDhigh BHYS IDDlow 0 BOFF BON B
Fig. 1-1: Unipolar Switching Sensor
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HAL57x, HAL58x
Unipolar Inverted Switching Sensors: The sensor turns to low current consumption with the magnetic south pole on the branded side of the package and turns to high consumption if the magnetic field is removed. The sensor does not respond to the magnetic north pole on the branded side. Current consumption IDDhigh BHYS IDDlow 0 BON BOFF B HAL573 HAL574 HAL575 HAL576 HAL581 Fig. 1-2: Unipolar Inverted Switching Sensor HAL584 Latching Sensors: The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low consumption with the magnetic north pole on the branded side. The current consumption does not change if the magnetic field is removed. For changing the current consumption, the opposite magnetic field polarity must be applied. Current consumption IDDhigh 584K 573K 574K 575K 576K 581K 1.3. Marking Code
DATA SHEET
All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. Type Temperature Range K 573E 574E 575E 576E 581E 584E E
1.3.1. Special Marking of Prototype Parts Prototype parts are coded with an underscore beneath the temperature range letter on each IC. They may be used for lab experiments and design-ins but are not intended to be used for qualification tests or as production parts. 1.4. Operating Junction Temperature Range The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). K: TJ = -40 C to +140 C E: TJ = -40 C to +100 C
BHYS IDDlow BOFF Fig. 1-3: Latching Sensor 0 BON B
Note: Due to the high power dissipation at high current consumption, there is a difference between the ambient temperature (TA) and junction temperature. Please refer to section 5.4. on page 31 for details.
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DATA SHEET
HAL57x, HAL58x
1.5. Hall Sensor Package Codes HALXXXPA-T Temperature Range: K or E Package: SF for SOT89B-1 UA for TO92UA Type: 57x or 58x Example: HAL581UA-E Type: 581 Package: TO92UA Temperature Range: TJ = -40 C to +100 C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: "Ordering Codes for Hall Sensors". 1.6. Solderability all packages: according to IEC68-2-58 During soldering reflow processing and manual reworking, a component body temperature of 260 C should not be exceeded. Components stored in the original packaging should provide a shelf life of at least 12 months, starting from the date code printed on the labels, even in environments as extreme as 40 C and 90% relative humidity.
VDD 1
2 GND
x
x = pin 3 for TO92UA-1/-2 package x = pin 4 for SOT89B-1 package
Fig. 1-4: Pin configuration
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HAL57x, HAL58x
2. Functional Description The HAL 57x, HAL 58x two-wire sensors are monolithic integrated circuits which switch in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the current source switches to the corresponding state. In the low current consumption state, the current source is switched off and the current consumption is caused only by the current through the Hall sensor. In the high current consumption state, the current source is switched on and the current consumption is caused by the current through the Hall sensor and the current source. The built-in hysteresis eliminates oscillation and provides switching behavior of the output signal without bouncing. Magnetic offset caused by mechanical stress is compensated for by using the "switching offset compensation technique". An internal oscillator provides a twophase clock. In each phase, the current is forced through the Hall plate in a different direction, and the Hall voltage is measured. At the end of the two phases, the Hall voltages are averaged and thereby the offset voltages are eliminated. The average value is compared with the fixed switching points. Subsequently, the current consumption switches to the corresponding state. The amount of time elapsed from crossing the magnetic switching level to switching of the current level can vary between zero and 1/fosc. Shunt protection devices clamp voltage peaks at the VDD-pin together with external series resistors. Reverse current is limited at the VDD-pin by an internal series resistor up to -15 V. No external protection diode is needed for reverse voltages ranging from 0 V to -15 V.
VDD 1 Reverse Voltage & Overvoltage Protection
DATA SHEET
HAL57x, HAL58x
Temperature Dependent Bias
Hysteresis Control
Hall Plate Switch
Comparator Current Source
Clock GND 2, x
x = pin 3 for TO92UA-1/-2 package x = pin 4 for SOT89B-1 package
Fig. 2-1: HAL57x, HAL 58x block diagram
fosc
t B BOFF BON t IDD IDDhigh IDDlow t IDD
1/fosc = 6.9 s
t
Fig. 2-2: Timing diagram (example: HAL 581)
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DATA SHEET
HAL57x, HAL58x
3. Specifications 3.1. Outline Dimensions
Fig. 3-1: SOT89B-1: Plastic Small Outline Transistor package, 4 leads Weight approximately 0.039 g
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HAL57x, HAL58x
DATA SHEET
Fig. 3-2: TO92UA-1: Plastic Transistor Standard UA package, 3 leads, spread Weight approximately 0.105 g
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DATA SHEET
HAL57x, HAL58x
Fig. 3-3: TO92UA-2: Plastic Transistor Standard UA package, 3 leads Weight approximately 0.105 g
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HAL57x, HAL58x
DATA SHEET
Fig. 3-4: TO92UA-2: Dimensions ammopack inline, not spread
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DATA SHEET
HAL57x, HAL58x
Fig. 3-5: TO92UA-1: Dimensions ammopack inline, spread
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HAL57x, HAL58x
3.2. Dimensions of Sensitive Area 0.25 mm x 0.12 mm 3.3. Positions of Sensitive Areas SOT89B-1 x y center of the package 0.85 mm nominal TO92UA-1/-2 center of the package 0.9 mm nominal
DATA SHEET
3.4. Absolute Maximum Ratings Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this circuit. All voltages listed are referenced to ground. Symbol Parameter Pin No. Min. VDD TJ Supply Voltage Junction Temperature Range 1 -151) 2) -40 Limit Values Max. 282) 170 V C Unit
1) -18 V with a 100 series resistor 2) as long as T max is not exceeded J
at pin 1 (-16 V with a 30 series resistor)
3.4.1. Storage and Shelf Life The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required. Solderability is guaranteed for one year from the date code on the package. Solderability has been tested after storing the devices for 16 hours at 155 C. The wettability was more than 95%.
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Micronas
DATA SHEET
HAL57x, HAL58x
3.5. Recommended Operating Conditions Functional operation of the device beyond those indicated in the "Recommended Operating Conditions" of this specification is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime. All voltages listed are referenced to ground. Symbol Parameter Pin No. Min. VDD TA ton
1) when
Limit Values Typ. - - 30 Max. 24 851) -
Unit
Supply Voltage Ambient Temperature for Continuous Operation Supply Time for Pulsed Mode using the "K" type and VDD 16 V
1
3.75 -40 -
V C s
Note: Due to the high power dissipation at high current consumption, there is a difference between the ambient temperature (TA) and junction temperature. The power dissipation can be reduced by repeatedly switching the supply voltage on and off (pulse mode). Please refer to section 5.4. on page 31 for details.
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HAL57x, HAL58x
3.6. Characteristics at TJ = -40 C to +140 C , VDD = 3.75 V to 24 V, at Recommended Operation Conditions if not otherwise specified in the column "Conditions". Typical Characteristics for TJ = 25 C and VDD = 12 V
Symbol Parameter Pin No. Min. IDDlow IDDhigh VDDZ fosc ten(O) tr tf RthJSB case SOT89B-1 RthJA case TO92UA-1, TO92UA-2
1)
DATA SHEET
Limit Values Typ. 6 Max. 6.9
Unit
Conditions
Low Current Consumption over Temperature Range High Current Consumption over Temperature Range Overvoltage Protection at Supply Internal Oscillator Chopper Frequency over Temperature Range Enable Time of Output after Setting of VDD Output Rise Time Output Fall Time Thermal Resistance Junction to Substrate Backside
1
5
mA
1
12
14.3
17
mA IDD = 25 mA, TJ = 25 C, t = 20 ms
1
-
28.5
32
V
-
-
145
-
kHz s s s K/W
1)
1
-
30
-
1 1 -
- - -
0.4 0.4 150
1.6 1.6 200
VDD = 12 V, Rs = 30 VDD = 12 V, Rs = 30 Fiberglass Substrate 30 mm x 10 mm x 1.5mm, pad size see Fig. 3-6
Thermal Resistance Junction to Soldering Point
-
-
150
200
K/W
B > BON + 2 mT or B < BOFF - 2 mT for HAL 57x,
B > BOFF + 2 mT or B < BON - 2 mT for HAL 58x
5.0
2.0
2.0
1.0
Fig. 3-6: Recommended pad size SOT89B-1 Dimensions in mm
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Micronas
DATA SHEET
HAL57x, HAL58x
3.7. Magnetic Characteristics Overview at TJ = -40 C to +140 C, VDD = 3.75 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package.
Sensor Switching Type HAL 573 unipolar Parameter TJ -40 C 25 C 100 C 140 C HAL 574 unipolar -40 C 25 C 100 C 140 C HAL 575 latching -40 C 25 C 100 C 140 C HAL 576 unipolar -40 C 25 C 100 C 140 C HAL 581 unipolar inverted -40 C 25 C 100 C 140 C HAL 584 unipolar inverted -40 C 25 C 100 C 140 C Min. 40.2 38 34 34 5.5 5.5 5.5 5 0.5 0.5 0.5 0.5 3.3 3.3 2.8 2 6.5 6.5 6.5 6.5 5 5 5 4.5 On point BON Typ. 45.7 43.5 40 38 9.2 9.2 9.2 8.8 4 4 4 4 5.7 5.7 5.5 5.2 10 10 10 10.4 7.2 7.2 7.2 8 Max. 51.2 49 46 46 12 12 12 12.5 8 8 8 8 8.2 8.2 8.3 8.3 13.8 13.8 13.8 14.3 11.5 11.5 11.5 11.5 Min. 37.8 36 32 32 5 5 5 3.5 -8 -8 -8 -8 1.8 1.8 1.3 0.3 8 8 8 8 5.5 5.5 5.5 5.5 Off point BOFF Typ. 43.5 41.5 38 36 7.2 7.2 7.2 7.5 -4 -4 -4 -4 4.2 4.2 4 3.7 12 12 12 12 9.2 9.2 9.2 9 Max. 49.2 47 44 44 11.5 11.5 11.5 11.5 -0.5 -0.5 -0.5 -0.5 6.7 6.7 6.8 7 15.5 15.5 15.5 16 12 12 12 12.5 Hysteresis BHYS Min. 0.5 0.5 0.5 0.2 0.5 0.5 0.5 0.2 5 5 5 5 0.3 0.3 0.3 0.3 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.2 Typ. 2.2 2 2 2 2 2 2 1.9 8 8 8 8 1.9 1.9 1.9 1.9 2 2 2 2 2 2 2 1.9 Max. 5 5 5 5 3 3 3 3.5 11 11 11 11 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.5 3.0 3.0 3.0 3.5 mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT mT Unit
Note: For detailed descriptions of the individual types, see pages 18 and following.
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DATA SHEET
mA 25 20 IDD 15 10 5 0
HAL 57x, HAL 58x
mA 20 18
HAL 57x, HAL 58x
IDDhigh
IDD
16 14 12
IDDhigh
IDDlow
VDD = 3.75 V 10 8 VDD = 12 V VDD = 24 V
-5 TA = -40 C -10 -15 -20 -15 -10 -5 TA = 25 C TA = 100 C
6 IDDlow 4 2 0 -50 200 C
0
5
10 15 20 25 30 V VDD
0
50
100
150 TA
Fig. 3-7: Typical current consumption versus supply voltage
Fig. 3-9: Typical current consumption versus ambient temperature
mA 20 18 IDD 16 14 12
HAL 57x, HAL 58x
kHz 200 180
HAL 57x, HAL 58x
IDDhigh
fosc 160 140 120
TA = -40 C 10 8 6 IDDlow 4 2 0 40 20 0 -50 200 C TA = 25 C TA = 100 C 100 VDD = 3.75 V 80 60 VDD = 12 V VDD = 24 V
0
1
2
3
4 VDD
5
6V
0
50
100
150 TA
Fig. 3-8: Typical current consumption versus supply voltage
Fig. 3-10: Typ. internal chopper frequency versus ambient temperature
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Micronas
DATA SHEET
HAL57x, HAL58x
kHz 200 180 fosc 160 140 120 100
HAL 57x, HAL 58x
kHz 200 180 fosc 160 140 120 100
HAL 57x, HAL 58x
TA = -40 C 80 60 40 20 0 TA = 25 C TA = 100 C 80 60 40 20 0
TA = -40 C TA = 25 C TA = 100 C
0
5
10
15
20
25 VDD
30 V
3
4
5
6
7 VDD
8V
Fig. 3-11: Typ. internal chopper frequency versus supply voltage
Fig. 3-12: Typ. internal chopper frequency versus supply voltage
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HAL573
4. Type Descriptions 4.1. HAL 573 The HAL 573 is a unipolar switching sensor with low sensitivity (see Fig. 4-5). The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Magnetic Features: - switching type: unipolar - low sensitivity - typical BON: 43.5 mT at room temperature - typical BOFF: 41.5 mT at room temperature - typical temperature coefficient of magnetic switching points is -1100 ppm/K - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz 0 BOFF IDDlow Applications
DATA SHEET
The HAL 573 is designed for applications with one magnetic polarity and weak magnetic amplitudes at the sensor position such as: - solid state switches, - contactless solutions to replace micro switches, - position and end point detection, and - rotating speed measurement.
Current consumption
IDDhigh BHYS
BON
B
Fig. 4-1: Definition of magnetic switching points for the HAL 573
Magnetic Characteristics at TJ = -40 C to +140 C, VDD = 3.75 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter TJ -40 C 25 C 100 C 140 C Min. 40.2 38 34 34 On point BON Typ. 45.7 43.5 40 38 Max. 51.2 49 46 46 Off point BOFF Min. 37.8 36 32 32 Typ. 43.5 41.5 38 36 Max. 49.2 47 44 44 Hysteresis BHYS Min. 0.5 0.5 0.5 0.2 Typ. 2.2 2 2 2 Max. 5 5 5 5 Magnetic Offset Min. Typ. 44.6 42.5 39 39 Max. mT mT mT mT Unit
The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
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Micronas
DATA SHEET
HAL573
mT 50
HAL 573
mT 60
HAL 573
BON BOFF 45
BON BOFF BON BOFF
BON 55 BOFF 50 BONmax BOFFmax
40
BON BON BOFF BOFF TA = -40 C
45
35
40 BONtyp 35 BOFFtyp BONmin BOFFmin 30 VDD = 3.75 V VDD = 12-24 V 0 50 100 150 TA, TJ 200 C
30
TA = 25 C TA = 100 C TA = 125 C
25
0
5
10
15
20
25 VDD
30 V
25 -50
Fig. 4-2: Typ. magnetic switching points versus supply voltage
Fig. 4-4: Magnetic switching points versus temperature
mT 50
HAL 573
Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature.
BON BOFF 45
40
35 TA = -40 C 30 TA = 25 C TA = 100 C TA = 125 C 25 3 3.5 4.0 4.5 5.0 5.5 VDD 6.0 V
Fig. 4-3: Typ. magnetic switching points versus supply voltage
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HAL574
4.2. HAL 574 The HAL 574 is a medium sensitive unipolar switching sensor (see Fig. 4-5). The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. In this two-wire sensor family, the HAL 584 is a sensor with the same magnetic characteristics but with an inverted output characteristic. Magnetic Features: - switching type: unipolar - medium sensitivity - typical BON: 9.2 mT at room temperature - typical BOFF: 7.2 mT at room temperature - typical temperature coefficient of magnetic switching points is 0 ppm/K - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz 0 BOFF IDDlow Applications
DATA SHEET
The HAL 574 is designed for applications with one magnetic polarity and weak magnetic amplitudes at the sensor position such as: - applications with large airgap or weak magnets, - solid state switches, - contactless solutions to replace micro switches, - position and end point detection, and - rotating speed measurement.
Current consumption
IDDhigh BHYS
BON
B
Fig. 4-5: Definition of magnetic switching points for the HAL 574
Magnetic Characteristics at TJ = -40 C to +140 C, VDD = 3.75 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter TJ -40 C 25 C 100 C 140 C Min. 5.5 5.5 5.5 5 On point BON Typ. 9.2 9.2 9.2 8.8 Max. 12 12 12 12.5 Off point BOFF Min. 5 5 5 3.5 Typ. 7.2 7.2 7.2 7.5 Max. 11.5 11.5 11.5 11.5 Hysteresis BHYS Min. 0.5 0.5 0.5 0.2 Typ. 2 2 2 1.9 Max. 3 3 3 3.5 Magnetic Offset Min. Typ. 8.2 8.2 8.2 8.2 Max. mT mT mT mT Unit
The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
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Micronas
DATA SHEET
HAL574
mT 12
HAL 574
mT 14
HAL 574
BONmax BOFFmax
BON BOFF 10
BON
BON 12 BOFF 10
8 BOFF 6 6 4 8
BONtyp
BOFFtyp BONmin TA = -40 C TA = 25 C TA = 100 C TA = 125 C 4 BOFFmin 2 VDD = 3.75 V VDD = 12-24 V 0 -50 200 C
2
0
0
5
10
15
20
25 VDD
30 V
0
50
100
150 TA, TJ
Fig. 4-6: Typ. magnetic switching points versus supply voltage
Fig. 4-8: Magnetic switching points versus temperature
mT 12
HAL 574
Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature.
BON BOFF 10
BON
8 BOFF 6
4
TA = -40 C TA = 25 C TA = 100 C TA = 125 C
2
0
3
3.5
4.0
4.5
5.0
5.5 VDD
6.0 V
Fig. 4-7: Typ. magnetic switching points versus supply voltage
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HAL575
4.3. HAL 575 The HAL 575 is a medium sensitive latching switching sensor (see Fig. 4-9). The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low consumption with the magnetic north pole on the branded side. The current consumption does not change if the magnetic field is removed. For changing the current consumption, the opposite magnetic field polarity must be applied. For correct functioning in the application, the sensor requires both magnetic polarities on the branded side of the package. Magnetic Features: - switching type: latching - medium sensitivity - typical BON: 4 mT at room temperature - typical BOFF: -4 mT at room temperature - typical temperature coefficient of magnetic switching points is 0 ppm/K - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz IDDlow BOFF 0 Applications
DATA SHEET
The HAL 575 is designed for applications with both magnetic polarities and weak magnetic amplitudes at the sensor position such as: - applications with large airgap or weak magnets, - multipole magnet applications, - contactless solutions to replace micro switches, - rotating speed measurement. Current consumption
IDDhigh
BHYS
BON
B
Fig. 4-9: Definition of magnetic switching points for the HAL 575
Magnetic Characteristics at TJ = -40 C to +140 C, VDD = 3.75 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter TJ -40 C 25 C 100 C 140 C Min. 0.5 0.5 0.5 0.5 On point BON Typ. 4 4 4 4 Max. 8 8 8 8 Off point BOFF Min. -8 -8 -8 -8 Typ. -4 -4 -4 -4 Max. -0.5 -0.5 -0.5 -0.5 Hysteresis BHYS Min. 5 5 5 5 Typ. 8 8 8 8 Max. 11 11 11 11 Magnetic Offset Min. Typ. 0 0 0 0 Max. mT mT mT mT Unit
The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
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Micronas
DATA SHEET
HAL575
mT 6
HAL 575
BON
mT 9 7 5
HAL 575
BONmax
BON BOFF
4
BON BOFF
BONtyp 2 TA = -40 C 0 TA = 25 C TA = 100 C -2 TA = 125 C BOFF -4 -7 -6 -9 -50 -1 -3 -5 BOFFtyp 3 1 BONmin BOFFmax
VDD = 3.75-12 V VDD = 24 V
BOFFmin 0 5 10 15 20 25 VDD 30 V 0 50 100 150 TA, TJ 200 C
Fig. 4-10: Typ. magnetic switching points versus supply voltage
Fig. 4-12: Magnetic switching points versus temperature
mT 6
HAL 575
BON
Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature.
BON BOFF
4
2 TA = -40 C 0 TA = 25 C TA = 100 C -2 TA = 125 C
-4
BOFF
-6
3
3.5
4.0
4.5
5.0
5.5 VDD
6.0 V
Fig. 4-11: Typ. magnetic switching points versus supply voltage
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HAL576
4.4. HAL 576 The HAL 576 is a medium sensitive unipolar switching sensor (see Fig. 4-13). The sensor turns to high current consumption with the magnetic south pole on the branded side of the package and turns to low current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Magnetic Features: - switching type: unipolar - medium sensitivity - typical BON: 5.7 mT at room temperature - typical BOFF: 4.2 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz 0 IDDlow BOFF BHYS Applications
DATA SHEET
The HAL 576 is designed for applications with one magnetic polarity and weak magnetic amplitudes at the sensor position such as: - applications with large airgap or weak magnets, - solid state switches, - contactless solutions to replace micro switches, - position and end point detection, and - rotating speed measurement.
Current consumption
IDDhigh
BON
B
Fig. 4-13: Definition of magnetic switching points for the HAL 576
Magnetic Characteristics at TJ = -40 C to +140 C, VDD = 3.75 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter TJ -40 C 25 C 100 C 140 C Min. 3.3 3.3 2.8 2 On point BON Typ. 5.7 5.7 5.5 5.2 Max. 8.2 8.2 8.3 8.3 Off point BOFF Min. 1.8 1.8 1.3 0.3 Typ. 4.2 4.2 4 3.7 Max. 6.7 6.7 6.8 7 Hysteresis BHYS Min. 0.3 0.3 0.3 0.3 Typ. 1.9 1.9 1.9 1.9 Max. 3.5 3.5 3.5 3.5 Magnetic Offset Min. Typ. 5 5 5 4.5 Max. mT mT mT mT Unit
The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
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Micronas
DATA SHEET
HAL576
mT 8 7
HAL 576
mT 9 BONmax 8 7 6 BOFFmax
HAL 576
BON BOFF
BON 6 5 4
BON BOFF
BOFF
BONtyp
5 4
3 TA = -40 C 2 1 0 TA = 25 C TA = 100 C 1 0 -50 3 2
BONmin BOFFtyp BOFFmin VDD = 3.75 V VDD = 12 V 0 VDD = 24 V 50 100 150 TA, TJ 200 C
0
5
10
15
20
25 VDD
30 V
Fig. 4-14: Typ. magnetic switching points versus supply voltage
Fig. 4-16: Magnetic switching points versus temperature
mT 8 7
HAL 576
Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature.
BON BOFF
BON 6 5 4 3 TA = -40 C 2 1 0 TA = 25 C TA = 100 C
BOFF
3
3.5
4.0
4.5
5.0
5.5 VDD
6.0 V
Fig. 4-15: Typ. magnetic switching points versus supply voltage
Micronas
25
HAL581
4.5. HAL 581 The HAL 581 is a medium sensitive unipolar switching sensor with an inverted output (see Fig. 4-17). The sensor turns to low current consumption with the magnetic south pole on the branded side of the package and turns to high current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. Magnetic Features: - switching type: unipolar inverted - medium sensitivity - typical BON: 10 mT at room temperature - typical BOFF: 12 mT at room temperature - typical temperature coefficient of magnetic switching points is 0 ppm/K - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz 0 BON Applications
DATA SHEET
The HAL 581 is designed for applications with one magnetic polarity and weak magnetic amplitudes at the sensor position where an inverted output signal is required such as: - applications with large airgap or weak magnets, - solid state switches, - contactless solutions to replace micro switches, - position and end point detection, and - rotating speed measurement.
Current consumption IDDhigh BHYS IDDlow BOFF B
Fig. 4-17: Definition of magnetic switching points for the HAL 581
Magnetic Characteristics at TJ = -40 C to +140 C, VDD = 3.75 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter TJ -40 C 25 C 100 C 140 C Min. 6.5 6.5 6.5 6.5 On point BON Typ. 10 10 10 10.4 Max. 13.8 13.8 13.8 14.3 Off point BOFF Min. 8 8 8 8 Typ. 12 12 12 12 Max. 15.5 15.5 15.5 16 Hysteresis BHYS Min. 0.5 0.5 0.5 0.5 Typ. 2 2 2 2 Max. 3.5 3.5 3.5 3.5 Magnetic Offset Min. Typ. 11 11 11 11 Max. mT mT mT mT Unit
The hysteresis is the difference between the switching points BHYS = BOFF - BON The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
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Micronas
DATA SHEET
HAL581
mT 14 BON 13 BOFF 12 11
HAL 581
BOFF
mT 16 BON 14 BOFF 12 10
HAL 581
BOFFmax
BONmax
BOFFtyp BONtyp BOFFmin BONmin
BON 10 9 TA = -40 C 8 7 6 TA = 25 C TA = 100 C TA = 125 C 0 5 10 15 20 25 VDD 30 V 4 VDD = 3.75 V 2 0 -50 VDD = 12-24 V 0 50 100 TA, TJ 150 C 8 6
Fig. 4-18: Typ. magnetic switching points versus supply voltage
Fig. 4-20: Magnetic switching points versus temperature
mT 14 BON 13 BOFF 12 11
HAL 581
Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature.
BOFF
BON 10 9 TA = -40 C 8 7 6 TA = 25 C TA = 100 C TA = 125 C 3 3.5 4.0 4.5 5.0 5.5 VDD 6.0 V
Fig. 4-19: Typ. magnetic switching points versus supply voltage
Micronas
27
HAL584
4.6. HAL 584 The HAL 584 is a medium sensitive unipolar switching sensor with an inverted output (see Fig. 4-21). The sensor turns to low current consumption with the magnetic south pole on the branded side of the package and turns to high current consumption if the magnetic field is removed. It does not respond to the magnetic north pole on the branded side. For correct functioning in the application, the sensor requires only the magnetic south pole on the branded side of the package. In this two-wire sensor family, the HAL 574 is a sensor with the same magnetic characteristics but with a normal output characteristic. Magnetic Features: - switching type: unipolar inverted - medium sensitivity - typical BON: 7.2 mT at room temperature - typical BOFF: 9.2 mT at room temperature - typical temperature coefficient of magnetic switching points is 0 ppm/K - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz 0 BON Applications
DATA SHEET
The HAL 584 is designed for applications with one magnetic polarity and weak magnetic amplitudes at the sensor position where an inverted output signal is required such as: - applications with large airgap or weak magnets, - solid state switches, - contactless solutions to replace micro switches, - position and end point detection, and - rotating speed measurement.
Current consumption IDDhigh BHYS IDDlow BOFF B
Fig. 4-21: Definition of magnetic switching points for the HAL 584
Magnetic Characteristics at TJ = -40 C to +140 C, VDD = 3.75 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter TJ -40 C 25 C 100 C 140 C Min. 5 5 5 4.5 On point BON Typ. 7.2 7.2 7.2 8 Max. 11.5 11.5 11.5 11.5 Off point BOFF Min. 5.5 5.5 5.5 5.5 Typ. 9.2 9.2 9.2 9 Max. 12 12 12 12.5 Hysteresis BHYS Min. 0.5 0.5 0.5 0.2 Typ. 2 2 2 1.9 Max. 3.0 3.0 3.0 3.5 Magnetic Offset Min. Typ. 8.2 8.2 8.2 8.2 Max. mT mT mT mT Unit
The hysteresis is the difference between the switching points BHYS = BOFF - BON The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
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Micronas
DATA SHEET
HAL584
mT 12
HAL 584
mT 14
HAL 584
BOFFmax
BON BOFF 10
BOFF
BON 12 BOFF 10
BONmax
8 BON 6 6 4 TA = -40 C 2 TA = 25 C TA = 100 C TA = 125 C 0 0 5 10 15 20 25 VDD 30 V 0 -50 0 2 4 VDD = 3.75 -12 V VDD = 24 V 50 100 TA, TJ 8
BOFFtyp
BONtyp BOFFmin BONmin
150 C
Fig. 4-22: Typ. magnetic switching points versus supply voltage
Fig. 4-24: Magnetic switching points versus temperature
mT 12
HAL 584
Note: In the diagram "Magnetic switching points versus temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature.
BON BOFF 10
BOFF
8 BON
6
4
TA = -40 C TA = 25 C TA = 100 C TA = 125 C
2
0
3
3.5
4.0
4.5
5.0
5.5 VDD
6.0 V
Fig. 4-23: Typ. magnetic switching points versus supply voltage
Micronas
29
HAL57x, HAL 58x
5. Application Notes 5.2. Extended Operating Conditions
DATA SHEET
WARNING:
DO NOT USE THESE SENSORS IN LIFESUPPORTING SYSTEMS, AVIATION, AND AEROSPACE APPLICATIONS!
5.1. Application Circuit Figure 5-1 shows a simple application with a two-wire sensor. The current consumption can be detected by measuring the voltage over RL. For correct functioning of the sensor, the voltage between pin 1 and 2 (VDD) must be a minimum of 3.75 V. With the maximum current consumption of 17 mA, the maximum RL can be calculated as: R Lmax + V SUPmin * 3.75 V 17 mA
1 VDD
All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 13). Typically, the sensors operate with supply voltages above 3 V. However, below 3.75 V, the current consumption and the magnetic characteristics may be outside the specification. Note: The functionality of the sensor below 3.75 V is not tested on a regular base. For special test conditions, please contact Micronas.
5.3. Start-up Behavior Due to the active offset compensation, the sensors have an initialization time (enable time ten(O)) after applying the supply voltage. The parameter ten(O) is specified in the Electrical Characteristics (see page 14). During the initialization time, the current consumption is not defined and can toggle between low and high. HAL57x:
VSUP VSIG
RL
2 or x GND
After ten(O), the current consumption will be high if the applied magnetic field B is above BON. The current consumption will be low if B is below BOFF. HAL58x
x = pin 3 for TO92UA-1/-2 package x = pin 4 for SOT89B-1 package
Fig. 5-1: Application Circuit 1 For applications with disturbances on the supply line or radiated disturbances, a series resistor RV (ranging from 10 to 30 ) and a capacitor both placed close to the sensor are recommended (see figure 5-2). In this case, the maximum RL can be calculated as: R Lmax + V SUPmin * 3.75 V * RV 17 mA
1 VDD RV VSIG 4.7 nF RL 2 or x GND
In case of sensors with an inverted switching behavior, the current consumption will be low if B > BOFF and high if B < BON. Note: For magnetic fields between BOFF and BON, the current consumption of the HAL sensor will be either low or high after applying VDD. In order to achieve a defined current consumption, the applied magnetic field must be above BON, respectively, below BOFF.
VSUP
x = pin 3 for TO92UA-1/-2 package x = pin 4 for SOT89B-1 package
Fig. 5-2: Application Circuit 2
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Micronas
DATA SHEET
HAL57x, HAL58x
5.5. EMC and ESD For applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see Fig. 5-3). The series resistor and the capacitor should be placed as closely as possible to the HAL sensor. Applications with this arrangement passed the EMC tests according to the product standards DIN 40839.
5.4. Ambient Temperature Due to internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). TJ = TA + T At static conditions and continuous operation, the following equation applies: T = IDD * VDD * Rth For all sensors, the junction temperature range TJ is specified. The maximum ambient temperature TAmax can be calculated as: TAmax = TJmax - T For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. Due to the range of IDDhigh, self-heating can be critical. The junction temperature can be reduced with pulsed supply voltage. For supply times (ton) ranging from 30 s to 1 ms, the following equation can be used: DT + I DD * V DD * R th * t on t off ) t on
Note: The international standard ISO 7637 is similar to the product standard DIN 40839. Please contact Micronas for detailed information and first EMC and ESD results.
RV1 100
RV2 30 1 VDD
VEMC 4.7 nF 2, x GND
x = pin 3 for TO92UA-1/-2 package x = pin 4 for SOT89B-1 package
Fig. 5-3: Recommended EMC test circuit
Micronas
31
HAL57x, HAL58x
6. Data Sheet History 1. Final Data Sheet: "HAL 574...576, 581, 584 TwoWire Hall Effect Sensor Family", April 11, 2002 6251-538-1DS. First release of the final data sheet. Major changes: - "K" temperature range specified - HAL571 and HAL 573 deleted - HAL576 added 2. Final Data Sheet: "HAL 573...576, 581, 584 TwoWire Hall Effect Sensor Family", Nov. 27, 2003 6251-538-2DS. Second release of the final data sheet. Major changes: - specification for HAL 573 added - new package diagrams for SOT89-1 and TO92UA-1 - package diagram for TO92UA-2 added - ammopack diagrams for TO92UA-1/-2 added
DATA SHEET
Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com Printed in Germany Order No. 6251-538-2DS
All information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples delivered. By this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Further, Micronas GmbH reserves the right to revise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. No part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of Micronas GmbH.
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Micronas

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