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| HMC383 v01.0606 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz 1 AMPLIFIERS - CHIP Typical Applications The HMC383 is ideal for use as a driver amplifier for: * Point-to-Point Radios * Point-to-Multi-Point Radios & VSAT * Test Equipment & Sensors * LO Driver for HMC Mixers * Military & Space Features Gain: 16 dB Saturated Output Power: +18 dBm Output IP3: +25 dBm Single Positive Supply: +5.0 V @ 101 mA 50 Ohm Matched Input/Output 2.26 mm x 1.35 mm x 0.1 mm Functional Diagram General Description The HMC383 is a general purpose GaAs PHEMT MMIC Driver Amplifier which operates between 12 and 30 GHz. The amplifier provides 16 dB of gain and +18 dBm of saturated power from a +5.0V supply. Consistent gain and output power across the operating band make it possible to use a common driver/LO amplifier approach in multiple radio bands. The HMC383 amplifier can easily be integrated into Multi-Chip-Modules (MCMs) due to its compact size, single supply operation, and DC blocked RF I/Os. All data is measured with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). Electrical Specifications, TA = +25 C, Vdd = +5V Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd) 12 13 Min. Typ. 12 - 18 16 0.03 14 13 15 18 25 9 101 13.5 0.04 14 Max. Min. Typ. 18 - 24 17 0.03 12 12 16.5 18 25 7 101 13 0.04 13 Max. Min. Typ. 24 - 28 16 0.03 14 7 16 17 24 6.5 101 13 0.04 12 Max. Min. Typ. 28 - 30 15 0.03 7 5 16 18 23 7.5 101 0.04 Max. Units GHz dB dB/ C dB dB dBm dBm dBm dB mA 1 - 26 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC383 v01.0606 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz Broadband Gain & Return Loss 20 15 10 RESPONSE (dB) 5 0 -5 -10 S21 S11 S22 Gain vs. Temperature 20 18 16 14 GAIN (dB) 12 10 8 6 4 +25C +85C -55C 1 AMPLIFIERS - CHIP 1 - 27 -15 -20 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 FREQUENCY (GHz) 2 0 10 12 14 16 18 20 22 24 26 28 30 32 FREQUENCY (GHz) Input Return Loss vs. Temperature 0 Output Return Loss vs. Temperature 0 +25C +85C -55C RETURN LOSS (dB) -10 RETURN LOSS (dB) 26 28 30 32 -5 +25C +85C -55C -5 -10 -15 -15 -20 10 12 14 16 18 20 22 24 FREQUENCY (GHz) -20 10 12 14 16 18 20 22 24 26 28 30 32 FREQUENCY (GHz) P1dB vs. Temperature 22 20 18 16 P1dB (dBm) Psat vs. Temperature 22 20 18 16 Psat (dBm) 14 12 10 8 6 4 2 0 +25C +85C -55C 14 12 10 8 6 4 2 0 10 12 14 16 18 20 22 24 26 28 30 32 FREQUENCY (GHz) +25C +85C -55C 10 12 14 16 18 20 22 24 26 28 30 32 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC383 v01.0606 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz 1 AMPLIFIERS - CHIP Power Compression @ 18 GHz 20 Pout (dBm), GAIN (dB), PAE (%) 18 16 14 12 10 8 6 4 2 0 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 Pout (dBm) Gain (dB) PAE (%) Power Compression @ 30 GHz 20 Pout (dBm), GAIN (dB), PAE (%) 18 16 14 12 10 8 6 4 2 0 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 Pout (dBm) Gain (dB) PAE (%) INPUT POWER (dBm) INPUT POWER (dBm) Output IP3 vs. Temperature 30 28 26 24 OIP3 (dBm) 22 20 18 16 14 12 10 10 12 14 16 18 20 22 24 26 28 30 32 FREQUENCY (GHz) +25C +85C -55C Noise Figure vs. Temperature 12 11 10 NOISE FIGURE (dB) 9 8 7 6 5 4 3 2 1 0 10 12 14 16 18 20 22 24 26 28 30 32 FREQUENCY (GHz) +25C +85C -55C Gain & Power vs. Supply Voltage @ 18 GHz 20 GAIN (dB), P1dB (dBm), Psat (dBm) 19 18 17 16 15 14 4.5 Gain P1dB Psat Reverse Isolation vs. Temperature 0 -10 -20 ISOLATION (dB) -30 -40 -50 -60 -70 -80 +25C +85C -55C 5 Vdd Supply Voltage (Vdc) 5.5 10 12 14 16 18 20 22 24 26 28 30 32 FREQUENCY (GHz) 1 - 28 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC383 v01.0606 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz Typical Supply Current vs. Vdd Vdd (V) +4.5 +5.0 +5.5 Idd (mA) 100 101 102 Absolute Maximum Ratings Drain Bias Voltage (Vdd) RF Input Power (RFin)(Vdd = +5.0 Vdc) Channel Temperature Continuous Pdiss (T= 85 C) (derate 9.9 mW/C above 85 C) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature ESD Sensitivity (HBM) +5.5 Vdc +10 dBm 175 C 0.89 W 101.0 C/W -65 to +150 C -55 to +85 C Class 1A 1 AMPLIFIERS - CHIP 1 - 29 Note: Amplifier will operate over full voltage ranges shown above ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC383 v01.0606 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz 1 AMPLIFIERS - CHIP Outline Drawing Die Packaging Information [1] Standard GP-1 Alternate [2] [1] Refer to the "Packaging Information" section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004" 3. TYPICAL BOND PAD IS .004" SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. OVERALL DIE SIZE .002 Pad Descriptions Pad Number 1 Function RFIN Description This pad is AC coupled and matched to 50 Ohms from 12 - 30 GHz. Interface Schematic 2 Vdd Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.1 F are required. 3 RFOUT This pad is AC coupled and matched to 50 Ohms from 12 - 30 GHz. Die Bottom GND Die bottom must be connected to RF/DC ground. 1 - 30 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC383 v01.0606 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz Assembly Diagram 1 AMPLIFIERS - CHIP For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 31 HMC383 v01.0606 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz 1 AMPLIFIERS - CHIP Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be mounted as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.102mm (0.004") Thick GaAs MMIC Wire Bond 0.076mm (0.003") RF Ground Plane 0.127mm (0.005") Thick Alumina Thin Film Substrate Figure 1. Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.102mm (0.004") Thick GaAs MMIC Wire Bond 0.076mm (0.003") RF Ground Plane 0.150mm (0.005") Thick Moly Tab 0.254mm (0.010") Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. Wire Bonding Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils). 1 - 32 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC383 v01.0606 GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 12 - 30 GHz Notes: 1 AMPLIFIERS - CHIP For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 33 |
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