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| IPB12CNE8N G IPI12CNE8N G IPD12CNE8N G IPP12CNE8N G OptiMOS(R)2 Power-Transistor Features * N-channel, normal level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) * 175 C operating temperature * Pb-free lead plating; RoHS compliant * Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO252) ID 85 12.4 67 V m A * Ideal for high-frequency switching and synchronous rectification Type IPB12CN10N G IPD12CNE8N G IPI12CNE8N G IPP12CNE8N G Package Marking PG-TO263-3 12CNE8N PG-TO252-3 12CNE8N PG-TO262-3 12CNE8N PG-TO220-3 12CNE8N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain current2) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage3) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) Value 67 48 268 154 6 20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 C I D=67 A, R GS=25 I D=67 A, V DS=68 V, di /dt =100 A/s, T j,max=175 C mJ kV/s V W C T C=25 C 125 -55 ... 175 55/175/56 J-STD20 and JESD22 see figure 3 2) 3) Tjmax=150C and duty cycle D=0.01 for Vgs<-5V page 1 2006-02-17 Rev. 1.01 IPB12CNE8N G IPI12CNE8N G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient (TO220, TO262, TO263) Thermal resistance, junction ambient (TO252) R thJC R thJA minimal footprint 6 cm2 cooling area4) minimal footprint 6 cm2 cooling area4) - IPD12CNE8N G IPP12CNE8N G Unit max. Values typ. 1.2 62 40 75 50 K/W Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=83 A V DS=68 V, V GS=0 V, T j=25 C V DS=68 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=67 A, (TO252) V GS=10 V, I D=67 A, (TO262) V GS=10 V, I D=67 A, (TO220, TO263) Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=67 A 85 2 3 0.1 4 1 A V - 10 1 9.2 100 100 12.4 nA m - 9.4 12.6 39 9.7 1.5 77 12.9 S 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.01 page 2 2006-02-17 IPB12CNE8N G IPI12CNE8N G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics5) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 5) IPD12CNE8N G IPP12CNE8N G Unit max. Values typ. C iss C oss C rss t d(on) tr t d(off) tf V DD=40 V, V GS=10 V, I D=33.5 A, R G=1.6 V GS=0 V, V DS=40 V, f =1 MHz - 3260 608 44 17 21 32 8 4340 809 66 26 31 48 12 pF ns Q gs Q gd Q sw Qg V plateau Q oss V DD=40 V, V GS=0 V V DD=40 V, I D=100 A, V GS=0 to 10 V - 19 12 21 48 5.5 46 26 17 30 64 61 nC V nC IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I F=67 A, T j=25 C V R=40 V, I F=I S, di F/dt =100 A/s - 1 103 255 67 268 1.2 - A V ns nC See figure 16 for gate charge parameter definition Rev. 1.01 page 3 2006-02-17 IPB12CNE8N G IPI12CNE8N G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V IPD12CNE8N G IPP12CNE8N G 140 70 120 60 100 50 P tot [W] 80 40 60 I D [A] 0 50 100 150 200 30 40 20 20 10 0 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 103 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 101 1 s 102 10 s 100 s 100 I D [A] DC 101 10 ms Z thJC [K/W] 1 ms 0.5 0.2 0.1 10 10 0 -1 0.05 0.02 0.01 single pulse 10-1 10 -1 10-2 10 0 10 1 10 2 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.01 page 4 2006-02-17 IPB12CNE8N G IPI12CNE8N G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 250 10 V 8V IPD12CNE8N G IPP12CNE8N G 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 30 5V 200 7V 25 20 6.5 V 5.5 V R DS(on) [m] 150 I D [A] 15 6V 100 6V 10 10 V 50 5.5 V 5 5V 0 0 1 4.5 V 0 3 4 5 0 20 40 60 80 2 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 250 8 Typ. forward transconductance g fs=f(I D); T j=25 C 100 200 80 150 60 100 g fs [S] 40 175 C I D [A] 50 25 C 20 0 0 2 4 6 8 0 0 20 40 60 80 V GS [V] I D [A] Rev. 1.01 page 5 2006-02-17 IPB12CNE8N G IPI12CNE8N G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=67 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 30 4 3.5 3 20 2.5 15 98 % 83 A IPD12CNE8N G IPP12CNE8N G 25 830 A R DS(on) [m] V GS(th) [V] typ 2 1.5 1 10 5 0.5 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 105 103 25 C 104 Ciss 102 175 C 175 C, 98% C [pF] 103 Coss I F [A] 25 C, 98% 101 102 Crss 101 0 20 40 60 80 100 0 0.5 1 1.5 2 V DS [V] V SD [V] Rev. 1.01 page 6 2006-02-17 IPB12CNE8N G IPI12CNE8N G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 100 IPD12CNE8N G IPP12CNE8N G 14 Typ. gate charge V GS=f(Q gate); I D=67 A pulsed parameter: V DD 12 40 V 10 25 C 100 C 20 V 8 60 V 150 C 10 V GS [V] 1 10 100 1000 I AS [A] 6 4 2 1 0 0 10 20 30 40 50 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 100 V GS Qg 95 V BR(DSS) [V] 90 85 V g s(th) 80 Q g (th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q gate 75 T j [C] Rev. 1.01 page 7 2006-02-17 IPB12CNE8N G IPI12CNE8N G PG-TO220-3: Outline IPD12CNE8N G IPP12CNE8N G Rev. 1.01 page 8 2006-02-17 IPB12CNE8N G IPI12CNE8N G IPD12CNE8N G IPP12CNE8N G Rev. 1.01 page 9 2006-02-17 IPB12CNE8N G IPI12CNE8N G IPD12CNE8N G IPP12CNE8N G Rev. 1.01 page 10 2006-02-17 IPB12CNE8N G IPI12CNE8N G PG-TO252-3: Outline IPD12CNE8N G IPP12CNE8N G Rev. 1.01 page 11 2006-02-17 IPB12CNE8N G IPI12CNE8N G IPD12CNE8N G IPP12CNE8N G Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.01 page 12 2006-02-17 |
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