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| Semiconductor IRF120, IRF121, IRF122, IRF123 8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09594. October 1997 Features * 8.0A and 9.2A, 80V and 100V * rDS(ON) = 0.27 and 0.36 * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Majority Carrier Device * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Ordering Information PART NUMBER IRF120 IRF121 IRF122 IRF123 PACKAGE TO-204AA TO-204AA TO-204AA TO-204AA BRAND IRF120 Symbol D G IRF121 IRF122 IRF123 S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1997 File Number 1565.2 2-1 IRF120, IRF121, IRF122, IRF123 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF120 100 100 9.2 6.5 37 20 60 0.4 36 -55 to 175 300 260 IRF121 80 80 9.2 6.5 37 20 60 0.4 36 -55 to 175 300 260 IRF122 100 100 8.0 5.6 32 20 60 0.4 36 -55 to 175 300 260 IRF123 80 80 8.0 5.6 32 20 60 0.4 36 -55 to 175 300 260 UNITS V V A A A V W W/oC mJ oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . Tpkg CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = 250A, VGS = 0V (Figure 10) MIN TYP MAX UNITS Drain to Source Breakdown Voltage IRF120, IRF122 IRF121, IRF123 Gate Threshold Voltage Zero Gate Voltage Drain Current 100 80 - 4.0 25 250 V V V A A VGS(TH) IDSS VDS = VGS, ID = 250A VDS = Rated BVDSS, VGS = 0V VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 150oC 2.0 - On-State Drain Current (Note 2) IRF120, IRF121 IRF122, IRF123 Gate to Source Leakage Current Drain to Source On Resistance (Note 2) IRF120, IRF121 IRF122, IRF123 Forward Transconductance (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V 9.2 8.0 100 A A nA IGSS rDS(ON) VGS = 20V ID = 5.6A, VGS = 10V (Figure 8, 9) - - 0.25 0.27 0.27 0.36 - S gfs td(ON) tr td(OFF) tf Qg(TOT) Qgs Qgd VDS > ID(ON) x rDS(ON)MAX, ID = 5.6A (Figure 12) VDD = 50V, ID 9.2A, RGS = 18, RL = 5.1 (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature 2.9 4.0 Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain "Miller" Charge - 8.8 30 19 20 9.7 13 45 29 30 15 ns ns ns ns nC VGS = 10V, ID = 5.6A, VDS = 0.8 x Rated BVDSS, Ig(REF) = 1.5mA (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature - - 2.2 2.3 - nC nC 2-2 IRF120, IRF121, IRF122, IRF123 Electrical Specifications PARAMETER Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Drain Inductance TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL CISS COSS CRSS LD Measured Between the Contact Screw on the Flange that is Closer to Source and Gate Pins and the Center of Die Measured From the Source Lead, 6mm (0.25in) From the Flange and the Source Bonding Pad Modified MOSFET Symbol Showing the Internal Device Inductances D LD G LS S TEST CONDITIONS VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) MIN - TYP 350 130 36 5.0 MAX UNITS pF pF pF nH Internal Source Inductance LS - 12.5 - nH Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient RJC RJA Free Air Operation - - 2.5 30 oC/W oC/W Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Rectifier G D MIN - TYP - MAX 8.0 32 UNITS A A S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge NOTES: VSD trr QRR TJ = 25oC, ISD = 9.2A, VGS = 0V (Figure 13) TJ = 25oC, ISD = 9.2A, dISD/dt = 100A/s TJ = 25oC, ISD = 9.2A, dISD/dt = 100A/s 55 0.25 110 0.53 2.5 240 1.10 V ns C 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 25V, starting TJ = 25oC, L = 640H, RG = 25, peak IAS= 9.2A (Figures 15, 16). 2-3 IRF120, IRF121, IRF122, IRF123 Typical Performance Curves Unless Otherwise Specified 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 0.8 0.6 0.4 0.2 0 0 25 10 8 IRF120 IRF121 6 IRF122 IRF123 4 2 125 50 75 100 TC , CASE TEMPERATURE (oC) 150 175 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10 ZJC , THERMAL IMPEDANCE (oC/W) 1 0.5 0.2 0.1 PDM t1 t2 0.1 0.05 0.02 0.01 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ= PDM x ZJC + TC 0.1 10-3 10-2 t1, RECTANGULAR PULSE DURATION (s) 1 10 0.01 10-5 10-4 FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 100 IRF120, IRF121 ID, DRAIN CURRENT (A) IRF122, IRF123 10 15 10V VGS = 8V 80s PULSE TEST 10s 100s 1ms ID, DRAIN CURRENT (A) 12 VGS = 7V 9 VGS = 6V 6 VGS = 5V 3 VGS = 4V 0 1000 0 10 20 30 40 50 VDS, DRAIN TO SOURCE VOLTAGE (V) 1 OPERATION IN THIS AREA LIMITED BY rDS(ON) TC = 25oC TJ = MAX RATED SINGLE PULSE 1 10ms DC IRF120, IRF122 IRF121, IRF123 0.1 100 10 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS 2-4 IRF120, IRF121, IRF122, IRF123 Typical Performance Curves Unless Otherwise Specified 15 80s PULSE TEST 12 VGS = 10V VGS = 8V ID, DRAIN CURRENT (A) (Continued) 100 VDS 50V 80s PULSE TEST ID, DRAIN CURRENT (A) VGS = 7V 9 VGS = 6V 6 VGS = 5V VGS = 4V 0 10 1 TJ = 175oC 3 TJ = 25oC 0.1 0 1.0 2.0 3.0 4.0 VDS, DRAIN TO SOURCE VOLTAGE (V) 5.0 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS rDS(ON), DRAIN TO SOURCE ON RESISTANCE 2.5 3.0 NORMALIZED DRAIN TO SOURCE ON RESISTANCE 80s PULSE TEST ID = 9.2A VGS = 10V 2.4 2.0 1.5 VGS = 10V 1.0 1.8 1.2 0.5 VGS = 20V 0 0 8 16 24 32 40 ID, DRAIN CURRENT (A) 0.6 0.0 -60 0 60 120 180 TJ, JUNCTION TEMPERATURE (oC) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 1.25 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE ID = 250A 1.15 C, CAPACITANCE (pF) 1000 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGS 800 1.05 600 CISS COSS 200 CRSS 0.95 400 0.85 0.75 -60 0 60 120 TJ, JUNCTION TEMPERATURE (oC) 180 0 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 2-5 IRF120, IRF121, IRF122, IRF123 Typical Performance Curves Unless Otherwise Specified 5.0 gfs, TRANSCONDUCTANCE (S) VDS 50V 80s PULSE TEST TJ = 25oC (Continued) 100 ISD, SOURCE TO DRAIN CURRENT (A) 4.0 10 3.0 TJ = 175oC 2.0 TJ = 175oC 1 TJ = 25oC 1.0 0 0 3 6 9 ID, DRAIN CURRENT (A) 12 15 0.1 0.0 0.4 0.8 1.2 1.6 VSD, SOURCE TO DRAIN VOLTAGE (V) 2.0 FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE 20 VGS, GATE TO SOURCE VOLTAGE (V) ID = 9.2A 16 VDS = 80V VDS = 50V VDS = 20V 12 8 4 0 0 3 6 9 12 Qg(TOT), TOTAL GATE CHARGE (nC) 15 FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE Test Circuits and Waveforms VDS tP IAS VARY tP TO OBTAIN REQUIRED PEAK IAS VGS DUT tP RG + BVDSS L VDS VDD VDD 0V IAS 0.01 0 tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS 2-6 IRF120, IRF121, IRF122, IRF123 Test Circuits and Waveforms (Continued) tON td(ON) tr VDS RL 90% tOFF td(OFF) tf 90% + RG DUT - VDD 0 10% 90% 10% VGS 0 10% 50% PULSE WIDTH 50% VGS FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS CURRENT REGULATOR VDS (ISOLATED SUPPLY) VDD Qg(TOT) VGS 12V BATTERY 0.2F 50k 0.3F SAME TYPE AS DUT Qgs Qgd D G DUT 0 VDS Ig(REF) 0 IG CURRENT SAMPLING RESISTOR S VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0 FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS 2-7 |
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