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| LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon 3 COLLECTOR 1 BASE MMBT4401LT1 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Symbol V CEO V CBO V EBO Value 40 60 6.0 600 Unit Vdc Vdc Vdc mAdc CASE 318-08, STYLE 6 SOT-23 (TO-236AB) IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C RJA PD RJA TJ , Tstg DEVICE MARKING MMBT4401LT1 = 2X ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (3) V (BR)CEO 40 60 6.0 -- -- -- Vdc -- Vdc -- Adc 0.1 Adc 0.1 Vdc (I C = 1.0 mAdc, I B = 0) Collector-Base Breakdown Voltage V (BR)CBO (I C = 0.1 mAdc, I E = 0) Emitter-Base Breakdown Voltage V (BR)EBO (I E = 0.1 mAdc, I C = 0) Base Cutoff Current I BEV (V CE = 35 Vdc, V EB = 0.4 Vdc) Collector Cutoff Current I CEX (V CE = 35 Vdc, V EB = 0.4 Vdc) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width <300 s; Duty Cycle <2.0%. O14-1/5 LESHAN RADIO COMPANY, LTD. MMBT4401LT1 ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Symbol hFE 20 40 80 100 40 VCE(sat) -- -- V BE(sat) Min Max Unit -- ON CHARACTERISTICS ( 3 ) DC Current Gain (I C = 0.1 mAdc, V CE = 1.0 Vdc) (I C = 1.0 mAdc, V CE = 1.0 Vdc) (I C = 10 mAdc, V CE = 1.0 Vdc) (I C = 150 mAdc, V CE = 1.0 Vdc) (I C = 500 mAdc, V CE = 2.0 Vdc) Collector-Emitter Saturation Voltage (I C = 150 mAdc, I B = 15 mAdc) (I C = 500 mAdc, I B = 50 mAdc) Base-Emitter Saturation Voltage (I C = 150 mAdc, I B = 15 mAdc) (I C = 500 mAdc, I B = 50 mAdc) -- -- -- 300 -- Vdc 0.4 0.75 Vdc 0.75 -- 0.95 1.2 SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (I C = 20 mAdc, V CE= 10Vdc, f = 100 MHz) Collector-Base Capacitance (V CB= 5.0 Vdc, I E = 0, f = 1.0 MHz) Emitter-Base Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) Input Impedance (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Small-Signal Current Gain (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Output Admittance (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) fT 250 C cb -- C eb -- h ie 1.0 h re 0.1 h fe 40 h oe 1.0 30 500 mhos 8.0 -- 15 X 10 -4 MHz -- pF 6.5 pF 30 k SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (V CC = 30 Vdc, V EB = 2.0 Vdc I C = 150 mAdc, I B1 = 15 mAdc) (V CC = 30 Vdc, I C = 150 mAdc I B1 = I B2 = 15 mAdc) td tr ts tf -- -- -- -- 15 20 225 30 ns ns 3. Pulse Test: Pulse Width <300 s; Duty Cycle <2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS +30 V + 16 V 0 1.0 to 100s, DUTY CYCLE = 2% +30 V 200 + 16 V 1.0 to 100s, DUTY CYCLE = 2% 200 1.0 k 0 1.0 k C S* < 10 pF C S*< 10 pF -14 V < 20 ns - 2.0V <2.0 ns 1N916 - 4.0 V Scope rise time < 4.0ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn-On Time Figure 2. Turn-Off Time O14-2/5 LESHAN RADIO COMPANY, LTD. MMBT4401LT1 TRANSIENT CHARACTERISTICS T J = 25C T J = 100C 30 20 10 7.0 5.0 V CC = 30 V I C / I B = 10 QT C obo CAPACITANCE (pF) 10 7.0 5.0 3.0 2.0 Q, CHARGE (pC) 1.0 0.7 0.5 0.3 0.2 0.1 C cb 3.0 2.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 QA 10 20 30 50 70 100 200 300 500 REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 3. Capacitance 100 70 50 100 Figure 4. Charge Data I C /I B = 10 70 50 tr V CC= 30V I C/I B =10 t , RISE TIME (ns) 30 20 t r @V CC=30V t r @V CC=10V t d@V EB=2.0V t d@V EB=0V 30 20 tf t , TIME (ns) 10 7.0 5.0 10 20 30 50 70 100 200 300 500 10 7.0 5.0 10 20 30 50 70 100 200 300 500 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 5. Turn-On Time Figure 6. Rise and Fall Time 300 100 t f , STORAGE TIME (ns) 200 t s' = t s - 1/8 t f I B1 = I B2 I C/I B = 10 to 20 t f , FALL TIME (ns) 70 50 I C /I B = 20 V CC = 30 V I B1 = I B2 30 20 100 I C /I B = 10 70 50 10 7.0 30 10 20 30 50 70 100 200 300 500 5.0 10 20 30 50 70 100 200 300 500 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time O14-3/5 LESHAN RADIO COMPANY, LTD. MMBT4401LT1 SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE V CE = 10 Vdc, T A = 25C Bandwidth = 1.0 Hz 10 10 I C = 1.0 mA, R S = 150 8.0 NF, NOISE FIGURE (dB) I C = 50 A, R S = 4.0 k 6.0 NF, NOISE FIGURE (dB) I C = 500 A, R S = 200 I C = 100 A, R S = 2.0 k f = 1.0 kHz R S = OPTIMUM RS = SOURCE RS = RESISTANCE 8.0 6.0 I C = 50 A I C = 100 A I C = 500 A I C = 1.0 mA 4.0 4.0 2.0 2.0 0 0.010.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0 500 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k f , FREQUENCY (kHz) R S, SOURCE RESISTANCE (k) Figure 9. Frequency Effects Figure 10. Source Resistance Effects h PARAMETERS (V CE = 10 Vdc, f = 1.0 kHz, T A = 25C) This group of graphs illustrates the relationship between h fe and other "h" parameters for this series of ransistors. To obtain these curves, a high-gain and a low-gain unit were selected from the MMBT4401LT1 lines, and the same units were used to develop the correspondingly numbered curves on each graph. 300 200 50 h ie, INPUT IMPEDANCE (k) 20 10 5.0 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 h fe, CURRENT GAIN 100 70 50 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 2.0 1.0 0.5 30 20 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 I C , COLLECTOR CURRENT (mA) h re, VOLTAGE FEEDBACK RATIO (X 10 -4 ) I C , COLLECTOR CURRENT (mA) Figure 11. Current Gain 7.0 5.0 3.0 2.0 Figure 12. Input Impedance h oe , OUTPUT ADMITTANCE ( mhos) 100 50 10 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 MMBT4401LT1 UNIT 1 MMBT4401LT1 UNIT 2 20 10 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 13. Voltage Feedback Ratio Figure 14. Output Admittance O14-4/5 LESHAN RADIO COMPANY, LTD. MMBT4401LT1 STATIC CHARACTERISTICS 3.0 h FE , NORMALIZED CURRENT GAIN 2.0 V CE= 1.0 V V CE=10 V T J = 125C 1.0 25C 0.7 0.5 -55C 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 20 300 500 I C , COLLECTOR CURRENT (mA) Figure 15. DC Current Gain V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 0.8 T J = 25C 0.6 I C=1.0 mA 0.4 10 mA 100mA 500mA 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 I B , BASE CURRENT (mA) Figure 16. Collector Saturation Region 10 +0.5 T J = 25C 0.8 V BE(sat) @ I C /I B =10 COEFFICIENT (mV/ C) 0 VC for V CE(sat) V, VOLTAGE ( VOLTS ) - 0.5 0.6 V BE @ V CE =1.0 V -1.0 0.4 -1.5 0.2 V CE(sat) @ I C /I B =10 -2.0 VB for V BE 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 - 2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 17. "On" Voltages Figure 18. Temperature Coefficients O14-5/5 |
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